Structural and optical properties of boron-doped amorphous carbon nitride thin films synthesized by microwave electron cyclotron resonance-plasma chemical vapor deposition
The structural and optical properties of boron (B)-doped amorphous carbon nitride (a-CNx) thin films with a B content of less than 10 at. % were investigated. The B-doped a-CNx thin films were synthesized by electron cyclotron resonance (ECR)-plasma chemical vapor deposition (CVD) by varying the sub...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 2014-07, Vol.53 (7), p.71002-1-071002-5 |
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| container_end_page | 1-071002-5 |
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| container_issue | 7 |
| container_start_page | 71002 |
| container_title | Japanese Journal of Applied Physics |
| container_volume | 53 |
| creator | Sawahata, Junji Teramoto, Michihito Nakamura, Shigeyuki Kametomo, Kenta Satake, Masaki Yamamoto, Shin-ichi Itoh, Kunio Takarabe, Kenichi |
| description | The structural and optical properties of boron (B)-doped amorphous carbon nitride (a-CNx) thin films with a B content of less than 10 at. % were investigated. The B-doped a-CNx thin films were synthesized by electron cyclotron resonance (ECR)-plasma chemical vapor deposition (CVD) by varying the substrate temperature and flow rate ratio of the source gases (BCl3/CH4/N2/Ar). An increase in the B content and a decrease in the Cl content were observed with increasing substrate temperature. The Tauc energy gap of the B-doped a-CNx thin films increased with decreasing C-N sp2 bond fraction and increasing B content. The photoluminescence (PL) peak position showed larger blue shifts and a tendency of increased integrated PL intensity was observed with increasing B content. These PL results suggest an increase in PL-active B-related sp2 C-C bond cluster density. |
| doi_str_mv | 10.7567/JJAP.53.071002 |
| format | Article |
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The B-doped a-CNx thin films were synthesized by electron cyclotron resonance (ECR)-plasma chemical vapor deposition (CVD) by varying the substrate temperature and flow rate ratio of the source gases (BCl3/CH4/N2/Ar). An increase in the B content and a decrease in the Cl content were observed with increasing substrate temperature. The Tauc energy gap of the B-doped a-CNx thin films increased with decreasing C-N sp2 bond fraction and increasing B content. The photoluminescence (PL) peak position showed larger blue shifts and a tendency of increased integrated PL intensity was observed with increasing B content. These PL results suggest an increase in PL-active B-related sp2 C-C bond cluster density.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.7567/JJAP.53.071002</identifier><identifier>CODEN: JJAPB6</identifier><language>eng</language><publisher>The Japan Society of Applied Physics</publisher><subject>Amorphous materials ; Blue shift ; Bonding ; Boron nitride ; Carbon nitride ; Chemical vapor deposition ; Density ; Optical properties ; Thin films</subject><ispartof>Japanese Journal of Applied Physics, 2014-07, Vol.53 (7), p.71002-1-071002-5</ispartof><rights>2014 The Japan Society of Applied Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c373t-c20599c4790c59b01084e6eed5c2abd6a5514b23a5192bbf97cc116dee98ac173</citedby><cites>FETCH-LOGICAL-c373t-c20599c4790c59b01084e6eed5c2abd6a5514b23a5192bbf97cc116dee98ac173</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.7567/JJAP.53.071002/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>314,780,784,27924,27925,53846,53893</link.rule.ids></links><search><creatorcontrib>Sawahata, Junji</creatorcontrib><creatorcontrib>Teramoto, Michihito</creatorcontrib><creatorcontrib>Nakamura, Shigeyuki</creatorcontrib><creatorcontrib>Kametomo, Kenta</creatorcontrib><creatorcontrib>Satake, Masaki</creatorcontrib><creatorcontrib>Yamamoto, Shin-ichi</creatorcontrib><creatorcontrib>Itoh, Kunio</creatorcontrib><creatorcontrib>Takarabe, Kenichi</creatorcontrib><title>Structural and optical properties of boron-doped amorphous carbon nitride thin films synthesized by microwave electron cyclotron resonance-plasma chemical vapor deposition</title><title>Japanese Journal of Applied Physics</title><addtitle>Jpn. J. Appl. Phys</addtitle><description>The structural and optical properties of boron (B)-doped amorphous carbon nitride (a-CNx) thin films with a B content of less than 10 at. % were investigated. The B-doped a-CNx thin films were synthesized by electron cyclotron resonance (ECR)-plasma chemical vapor deposition (CVD) by varying the substrate temperature and flow rate ratio of the source gases (BCl3/CH4/N2/Ar). An increase in the B content and a decrease in the Cl content were observed with increasing substrate temperature. The Tauc energy gap of the B-doped a-CNx thin films increased with decreasing C-N sp2 bond fraction and increasing B content. The photoluminescence (PL) peak position showed larger blue shifts and a tendency of increased integrated PL intensity was observed with increasing B content. These PL results suggest an increase in PL-active B-related sp2 C-C bond cluster density.</description><subject>Amorphous materials</subject><subject>Blue shift</subject><subject>Bonding</subject><subject>Boron nitride</subject><subject>Carbon nitride</subject><subject>Chemical vapor deposition</subject><subject>Density</subject><subject>Optical properties</subject><subject>Thin films</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNp1UU1r3DAUFCWFbja99qxjCXgr2ZZlH5cl_QgLCSQ9C_n5mVWwJUWSN2z_Uv5klWyvPb0PZoY3bwj5wtlGikZ-u73d3m9EtWGSM1Z-ICte1bKoWSMuyCpveFF3ZfmJXMb4lMdG1HxFXh9SWCAtQU9U24E6nwzk3gfnMSSDkbqR9i44Wwx5NVA9u-APbokUdOidpdakYAak6WAsHc00RxpPNh0wmj8Z35_obCC4F31EihNCyloUTjC59y5gdFZbwMJPOs6awgHn9xuO2rtAB_QummScvSIfRz1F_Pyvrsnv7zePu5_F_u7Hr912X0Alq1RAyUTXQS07BqLrGWdtjQ3iIKDU_dBoIXjdl5UWvCv7fuwkAOfNgNi1Gris1uTrWTc_4XnBmNRsIuA0aYvZt-JNK2TL26rO0M0Zmg3GGHBUPphZh5PiTL2lot5SUaJS51Qy4fpMMM6rJ7cEm538D_wXmXmS2Q</recordid><startdate>20140701</startdate><enddate>20140701</enddate><creator>Sawahata, Junji</creator><creator>Teramoto, Michihito</creator><creator>Nakamura, Shigeyuki</creator><creator>Kametomo, Kenta</creator><creator>Satake, Masaki</creator><creator>Yamamoto, Shin-ichi</creator><creator>Itoh, Kunio</creator><creator>Takarabe, Kenichi</creator><general>The Japan Society of Applied Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20140701</creationdate><title>Structural and optical properties of boron-doped amorphous carbon nitride thin films synthesized by microwave electron cyclotron resonance-plasma chemical vapor deposition</title><author>Sawahata, Junji ; Teramoto, Michihito ; Nakamura, Shigeyuki ; Kametomo, Kenta ; Satake, Masaki ; Yamamoto, Shin-ichi ; Itoh, Kunio ; Takarabe, Kenichi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c373t-c20599c4790c59b01084e6eed5c2abd6a5514b23a5192bbf97cc116dee98ac173</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Amorphous materials</topic><topic>Blue shift</topic><topic>Bonding</topic><topic>Boron nitride</topic><topic>Carbon nitride</topic><topic>Chemical vapor deposition</topic><topic>Density</topic><topic>Optical properties</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sawahata, Junji</creatorcontrib><creatorcontrib>Teramoto, Michihito</creatorcontrib><creatorcontrib>Nakamura, Shigeyuki</creatorcontrib><creatorcontrib>Kametomo, Kenta</creatorcontrib><creatorcontrib>Satake, Masaki</creatorcontrib><creatorcontrib>Yamamoto, Shin-ichi</creatorcontrib><creatorcontrib>Itoh, Kunio</creatorcontrib><creatorcontrib>Takarabe, Kenichi</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Sawahata, Junji</au><au>Teramoto, Michihito</au><au>Nakamura, Shigeyuki</au><au>Kametomo, Kenta</au><au>Satake, Masaki</au><au>Yamamoto, Shin-ichi</au><au>Itoh, Kunio</au><au>Takarabe, Kenichi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Structural and optical properties of boron-doped amorphous carbon nitride thin films synthesized by microwave electron cyclotron resonance-plasma chemical vapor deposition</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><addtitle>Jpn. J. Appl. Phys</addtitle><date>2014-07-01</date><risdate>2014</risdate><volume>53</volume><issue>7</issue><spage>71002</spage><epage>1-071002-5</epage><pages>71002-1-071002-5</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPB6</coden><abstract>The structural and optical properties of boron (B)-doped amorphous carbon nitride (a-CNx) thin films with a B content of less than 10 at. % were investigated. The B-doped a-CNx thin films were synthesized by electron cyclotron resonance (ECR)-plasma chemical vapor deposition (CVD) by varying the substrate temperature and flow rate ratio of the source gases (BCl3/CH4/N2/Ar). An increase in the B content and a decrease in the Cl content were observed with increasing substrate temperature. The Tauc energy gap of the B-doped a-CNx thin films increased with decreasing C-N sp2 bond fraction and increasing B content. The photoluminescence (PL) peak position showed larger blue shifts and a tendency of increased integrated PL intensity was observed with increasing B content. These PL results suggest an increase in PL-active B-related sp2 C-C bond cluster density.</abstract><pub>The Japan Society of Applied Physics</pub><doi>10.7567/JJAP.53.071002</doi><tpages>5</tpages></addata></record> |
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| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | Amorphous materials Blue shift Bonding Boron nitride Carbon nitride Chemical vapor deposition Density Optical properties Thin films |
| title | Structural and optical properties of boron-doped amorphous carbon nitride thin films synthesized by microwave electron cyclotron resonance-plasma chemical vapor deposition |
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