Proposal for fast-response radial Schottky junction photodetectors based on silicon nanowires
We propose a silicon-nanowire-based photodetector with a radial metal junction that is predicted to exhibit a significantly reduced response time. The width of the radial depletion layer across the nanowire can be controlled by adjusting the doping concentration of the silicon nanowire. We calculate...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 2015-03, Vol.54 (3), p.34301-1-034301-4 |
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| container_end_page | 1-034301-4 |
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| container_issue | 3 |
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| container_title | Japanese Journal of Applied Physics |
| container_volume | 54 |
| creator | Surawijaya, Akhmadi Kawano, Yukio Oda, Shunri |
| description | We propose a silicon-nanowire-based photodetector with a radial metal junction that is predicted to exhibit a significantly reduced response time. The width of the radial depletion layer across the nanowire can be controlled by adjusting the doping concentration of the silicon nanowire. We calculated depletion region widths for silicon nanowires of various diameters and doping concentrations, and then calculated the photogenerated carrier transit time, the RC time constant, and the diffusion time in the nanowire structure. We found that by using the radial junction configuration we could significantly improve the response time to 81 ps. We also found that the diffusion time for the photogenerated carriers depends strongly on the nanowire length and doping concentration. |
| doi_str_mv | 10.7567/JJAP.54.034301 |
| format | Article |
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The width of the radial depletion layer across the nanowire can be controlled by adjusting the doping concentration of the silicon nanowire. We calculated depletion region widths for silicon nanowires of various diameters and doping concentrations, and then calculated the photogenerated carrier transit time, the RC time constant, and the diffusion time in the nanowire structure. We found that by using the radial junction configuration we could significantly improve the response time to 81 ps. We also found that the diffusion time for the photogenerated carriers depends strongly on the nanowire length and doping concentration.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.7567/JJAP.54.034301</identifier><identifier>CODEN: JJAPB6</identifier><language>eng</language><publisher>The Japan Society of Applied Physics</publisher><subject>Carrier density ; Depletion ; Diffusion ; Doping ; Mathematical analysis ; Nanowires ; Response time ; Silicon</subject><ispartof>Japanese Journal of Applied Physics, 2015-03, Vol.54 (3), p.34301-1-034301-4</ispartof><rights>2015 The Japan Society of Applied Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c405t-9c811cae775552558a9b7bdccadbb83955bba384bfed311b944468748a38e8f63</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.7567/JJAP.54.034301/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>315,781,785,27929,27930,53851,53898</link.rule.ids></links><search><creatorcontrib>Surawijaya, Akhmadi</creatorcontrib><creatorcontrib>Kawano, Yukio</creatorcontrib><creatorcontrib>Oda, Shunri</creatorcontrib><title>Proposal for fast-response radial Schottky junction photodetectors based on silicon nanowires</title><title>Japanese Journal of Applied Physics</title><addtitle>Jpn. J. Appl. Phys</addtitle><description>We propose a silicon-nanowire-based photodetector with a radial metal junction that is predicted to exhibit a significantly reduced response time. The width of the radial depletion layer across the nanowire can be controlled by adjusting the doping concentration of the silicon nanowire. We calculated depletion region widths for silicon nanowires of various diameters and doping concentrations, and then calculated the photogenerated carrier transit time, the RC time constant, and the diffusion time in the nanowire structure. We found that by using the radial junction configuration we could significantly improve the response time to 81 ps. We also found that the diffusion time for the photogenerated carriers depends strongly on the nanowire length and doping concentration.</description><subject>Carrier density</subject><subject>Depletion</subject><subject>Diffusion</subject><subject>Doping</subject><subject>Mathematical analysis</subject><subject>Nanowires</subject><subject>Response time</subject><subject>Silicon</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNp1kM1LxDAQxYMouK5ePfe4CK1JkzTpcVn8WgQX1KOEJE0xtdvUJIvsf2-W7lHnMsyb3zyYB8A1ggWjFbtdr5ebgpICYoIhOgEzhAnLCazoKZhBWKKc1GV5Di5C6NJYUYJm4GPj3eiC7LPW-ayVIebehNENwWReNjYtXvWni_Frn3W7QUfrhmxMgmtMNDo6HzIlg2mypAfbW536IAf3Y5PPJThrZR_M1bHPwfv93dvqMX9-eXhaLZ9zTSCNea05QloaxiilJaVc1oqpRmvZKMVxTalSEnOiWtNghFRNCKk4IzyJhrcVnoPF5Dt6970zIYqtDdr0vRyM2wWBKk5ZKsgTWkyo9i4Eb1oxeruVfi8QFIccxSFHQYmYckwHN9OBdaPo3M4P6ZP_4cUfcNfJ8QDhIybGpsW_yrSCSw</recordid><startdate>20150301</startdate><enddate>20150301</enddate><creator>Surawijaya, Akhmadi</creator><creator>Kawano, Yukio</creator><creator>Oda, Shunri</creator><general>The Japan Society of Applied Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20150301</creationdate><title>Proposal for fast-response radial Schottky junction photodetectors based on silicon nanowires</title><author>Surawijaya, Akhmadi ; Kawano, Yukio ; Oda, Shunri</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c405t-9c811cae775552558a9b7bdccadbb83955bba384bfed311b944468748a38e8f63</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Carrier density</topic><topic>Depletion</topic><topic>Diffusion</topic><topic>Doping</topic><topic>Mathematical analysis</topic><topic>Nanowires</topic><topic>Response time</topic><topic>Silicon</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Surawijaya, Akhmadi</creatorcontrib><creatorcontrib>Kawano, Yukio</creatorcontrib><creatorcontrib>Oda, Shunri</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Surawijaya, Akhmadi</au><au>Kawano, Yukio</au><au>Oda, Shunri</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Proposal for fast-response radial Schottky junction photodetectors based on silicon nanowires</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><addtitle>Jpn. J. Appl. Phys</addtitle><date>2015-03-01</date><risdate>2015</risdate><volume>54</volume><issue>3</issue><spage>34301</spage><epage>1-034301-4</epage><pages>34301-1-034301-4</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPB6</coden><abstract>We propose a silicon-nanowire-based photodetector with a radial metal junction that is predicted to exhibit a significantly reduced response time. The width of the radial depletion layer across the nanowire can be controlled by adjusting the doping concentration of the silicon nanowire. We calculated depletion region widths for silicon nanowires of various diameters and doping concentrations, and then calculated the photogenerated carrier transit time, the RC time constant, and the diffusion time in the nanowire structure. We found that by using the radial junction configuration we could significantly improve the response time to 81 ps. We also found that the diffusion time for the photogenerated carriers depends strongly on the nanowire length and doping concentration.</abstract><pub>The Japan Society of Applied Physics</pub><doi>10.7567/JJAP.54.034301</doi><tpages>4</tpages></addata></record> |
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| ispartof | Japanese Journal of Applied Physics, 2015-03, Vol.54 (3), p.34301-1-034301-4 |
| issn | 0021-4922 1347-4065 |
| language | eng |
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| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | Carrier density Depletion Diffusion Doping Mathematical analysis Nanowires Response time Silicon |
| title | Proposal for fast-response radial Schottky junction photodetectors based on silicon nanowires |
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