Leakage Current Suppression by Passivation of Defects by Anodic Oxidation of 4H-SiC Schottky Contacts

To suppress the negative influence of defects on 4H-SiC Schottky barrier diode characteristics, we have developed a new method called passivation of defects by anodic oxidation (PDA). This method utilizes anodic oxidation as a means to form oxide films on defects of the 4H-SiC surface, and these oxi...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2013-04, Vol.52 (4), p.04CP02-04CP02-5
Hauptverfasser:	Kato, Masashi, Kimura, Masaya, Ichimura, Masaya
Format:	Artikel
Sprache:	eng
Schlagworte:	Anodizing Barriers Defects Diodes Leakage current Optimization Oxide coatings Passivation PDA
Online-Zugang:	Volltext
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