Characteristics of phase transition and separation in a In–Ge–Sb–Te system

► InGeSbTe films were fabricated via co-deposition stoichiometric GST and IST targets. ► As the amount of IST was increased in InGeSbTe, the value for Vth and the phase transition temperature were increased. ► The phase separation in InGeSbTe is caused by differences in the enthalpy change for forma...

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Veröffentlicht in:	Applied surface science 2012-10, Vol.258 (24), p.9786-9791
Hauptverfasser:	Park, Sung Jin, Jang, Moon Hyung, Park, Seung-Jong, Cho, Mann-Ho, Ko, Dae-Hong
Format:	Artikel
Sprache:	eng
Schlagworte:	Antimony Bond energy Chalcogenide Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Crystallization Deposition Exact sciences and technology InGeSbTe Ion beam sputtering Phase change Phase separation Phase transformations Physics PRAM Threshold voltage X-rays
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