AlGaN Ultraviolet A and Ultraviolet C Photodetectors with Very High Specific Detectivity $D^{}

The development of AlGaN pin photodetectors sensitive in the UV range with different narrow band active regions is reported in this paper. Structures were grown by metalorganic vapor phase epitaxy on (0001) sapphire substrates using three-dimensional GaN as well as high temperature AlN nucleation. V...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Japanese Journal of Applied Physics 2013-08, Vol.52 (8), p.08JB28-08JB28-4
Hauptverfasser:	Albrecht, Björn, Kopta, Susanne, John, Oliver, Kirste, Lutz, Driad, Rachid, Köhler, Klaus, Walther, Martin, Ambacher, Oliver
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum Aluminum gallium nitrides Density Gallium nitrides Nucleation Packages Photodetectors Three dimensional Ultraviolet
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!