Effects of Deep Trapping States at High Temperatures on Transient Performance of AlGaN/GaN Heterostructure Field-Effect Transistors

Kinetic studies on the current collapse of a normally-OFF AlGaN/GaN heterostructure field-effect transistor under a high voltage have been performed above room temperature. The ON-state resistance after the ON switching from the OFF state increases at high temperatures, contrary to the expectation t...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2013-04, Vol.52 (4), p.04CF07-04CF07-5
Hauptverfasser:	Tanaka, Kenichiro, Ishida, Masahiro, Ueda, Tetsuzo, Tanaka, Tsuyoshi
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum gallium nitrides Barriers Emission Field effect transistors Gallium nitrides Heterostructures High voltages Semiconductor devices Transient performance
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container_end_page	04CF07-5
container_issue	4
container_start_page	04CF07
container_title	Japanese Journal of Applied Physics
container_volume	52
creator	Tanaka, Kenichiro Ishida, Masahiro Ueda, Tetsuzo Tanaka, Tsuyoshi
description	Kinetic studies on the current collapse of a normally-OFF AlGaN/GaN heterostructure field-effect transistor under a high voltage have been performed above room temperature. The ON-state resistance after the ON switching from the OFF state increases at high temperatures, contrary to the expectation that the emission of electrons is enhanced at elevated temperatures. This result indicates that elevating the temperature enhances not only the emission of electrons but also their capture. We experimentally observe that the enhancement of the capture process at high temperatures originates from the energy barrier for the capture of electrons, the value of which is determined to be $0.17\pm 0.04$ eV. The origin of the energy barrier for the capture process is explained by a configuration coordinate diagram.
doi_str_mv	10.7567/JJAP.52.04CF07
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The ON-state resistance after the ON switching from the OFF state increases at high temperatures, contrary to the expectation that the emission of electrons is enhanced at elevated temperatures. This result indicates that elevating the temperature enhances not only the emission of electrons but also their capture. We experimentally observe that the enhancement of the capture process at high temperatures originates from the energy barrier for the capture of electrons, the value of which is determined to be $0.17\pm 0.04$ eV. The origin of the energy barrier for the capture process is explained by a configuration coordinate diagram.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.7567/JJAP.52.04CF07</identifier><language>eng</language><publisher>The Japan Society of Applied Physics</publisher><subject>Aluminum gallium nitrides ; Barriers ; Emission ; Field effect transistors ; Gallium nitrides ; Heterostructures ; High voltages ; Semiconductor devices ; Transient performance</subject><ispartof>Japanese Journal of Applied Physics, 2013-04, Vol.52 (4), p.04CF07-04CF07-5</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c400t-173bbbbf2d99b62efd16928ae338b52b33b5df7b3311ec5806996ae504ad39273</citedby><cites>FETCH-LOGICAL-c400t-173bbbbf2d99b62efd16928ae338b52b33b5df7b3311ec5806996ae504ad39273</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Tanaka, Kenichiro</creatorcontrib><creatorcontrib>Ishida, Masahiro</creatorcontrib><creatorcontrib>Ueda, Tetsuzo</creatorcontrib><creatorcontrib>Tanaka, Tsuyoshi</creatorcontrib><title>Effects of Deep Trapping States at High Temperatures on Transient Performance of AlGaN/GaN Heterostructure Field-Effect Transistors</title><title>Japanese Journal of Applied Physics</title><description>Kinetic studies on the current collapse of a normally-OFF AlGaN/GaN heterostructure field-effect transistor under a high voltage have been performed above room temperature. The ON-state resistance after the ON switching from the OFF state increases at high temperatures, contrary to the expectation that the emission of electrons is enhanced at elevated temperatures. This result indicates that elevating the temperature enhances not only the emission of electrons but also their capture. We experimentally observe that the enhancement of the capture process at high temperatures originates from the energy barrier for the capture of electrons, the value of which is determined to be $0.17\pm 0.04$ eV. The origin of the energy barrier for the capture process is explained by a configuration coordinate diagram.</description><subject>Aluminum gallium nitrides</subject><subject>Barriers</subject><subject>Emission</subject><subject>Field effect transistors</subject><subject>Gallium nitrides</subject><subject>Heterostructures</subject><subject>High voltages</subject><subject>Semiconductor devices</subject><subject>Transient performance</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNp1kEtLxDAUhYMoOI5uXQdXIrSTpE3aLodxHg6DDjiuS9rejJU-YpIuXPvHbam4UQPhcMN3ziUHoWtK_IiLaLbdzvc-Zz4JFysSnaAJDcLIC4ngp2hCCKNemDB2ji6sfetHwUM6QZ9LpSB3FrcK3wNofDBS67I54mcnHVgsHd6Ux1d8gFqDka4z_WPbDFxjS2gc3oNRrallk8OQMq_W8nHWX7wBB6a1znT5YMOrEqrCGxd--61rjb1EZ0pWFq6-dYpeVsvDYuPtntYPi_nOy0NCnEejIOuPYkWSZIKBKqhIWCwhCOKMsywIMl6oqFdKIecxEUkiJHASyiJIWBRM0e2Yq0373oF1aV3aHKpKNtB2NqUi5pGIBUt61B_RvP-ANaBSbcpamo-UknRoOx3aTjlLx7Z7w81oKLXUP_Av6O4P6J_EL7DSjCA</recordid><startdate>20130401</startdate><enddate>20130401</enddate><creator>Tanaka, Kenichiro</creator><creator>Ishida, Masahiro</creator><creator>Ueda, Tetsuzo</creator><creator>Tanaka, Tsuyoshi</creator><general>The Japan Society of Applied Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7QF</scope><scope>7QQ</scope><scope>7SP</scope><scope>7SR</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20130401</creationdate><title>Effects of Deep Trapping States at High Temperatures on Transient Performance of AlGaN/GaN Heterostructure Field-Effect Transistors</title><author>Tanaka, Kenichiro ; Ishida, Masahiro ; Ueda, Tetsuzo ; Tanaka, Tsuyoshi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c400t-173bbbbf2d99b62efd16928ae338b52b33b5df7b3311ec5806996ae504ad39273</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Aluminum gallium nitrides</topic><topic>Barriers</topic><topic>Emission</topic><topic>Field effect transistors</topic><topic>Gallium nitrides</topic><topic>Heterostructures</topic><topic>High voltages</topic><topic>Semiconductor devices</topic><topic>Transient performance</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Tanaka, Kenichiro</creatorcontrib><creatorcontrib>Ishida, Masahiro</creatorcontrib><creatorcontrib>Ueda, Tetsuzo</creatorcontrib><creatorcontrib>Tanaka, Tsuyoshi</creatorcontrib><collection>CrossRef</collection><collection>Aluminium Industry Abstracts</collection><collection>Ceramic Abstracts</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Tanaka, Kenichiro</au><au>Ishida, Masahiro</au><au>Ueda, Tetsuzo</au><au>Tanaka, Tsuyoshi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effects of Deep Trapping States at High Temperatures on Transient Performance of AlGaN/GaN Heterostructure Field-Effect Transistors</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>2013-04-01</date><risdate>2013</risdate><volume>52</volume><issue>4</issue><spage>04CF07</spage><epage>04CF07-5</epage><pages>04CF07-04CF07-5</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><abstract>Kinetic studies on the current collapse of a normally-OFF AlGaN/GaN heterostructure field-effect transistor under a high voltage have been performed above room temperature. The ON-state resistance after the ON switching from the OFF state increases at high temperatures, contrary to the expectation that the emission of electrons is enhanced at elevated temperatures. This result indicates that elevating the temperature enhances not only the emission of electrons but also their capture. We experimentally observe that the enhancement of the capture process at high temperatures originates from the energy barrier for the capture of electrons, the value of which is determined to be $0.17\pm 0.04$ eV. The origin of the energy barrier for the capture process is explained by a configuration coordinate diagram.</abstract><pub>The Japan Society of Applied Physics</pub><doi>10.7567/JJAP.52.04CF07</doi></addata></record>
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source	IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link
subjects	Aluminum gallium nitrides Barriers Emission Field effect transistors Gallium nitrides Heterostructures High voltages Semiconductor devices Transient performance
title	Effects of Deep Trapping States at High Temperatures on Transient Performance of AlGaN/GaN Heterostructure Field-Effect Transistors
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