Analytical model for silicon-on-insulator lateral high-voltage devices using variation of lateral thickness technique

Recently, the variation of lateral thickness (VLT) technique has been proposed as an effective lateral voltage-sustaining technology. However, no analytical model has been reported for exploring the physical mechanism quantitatively. By solving the two-dimensional (2D) Poisson equation, an analytica...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2015-02, Vol.54 (2), p.24301-1-024301-6
Hauptverfasser:	Yao, Jiafei, Guo, Yufeng, Li, Man, Huang, Xiaofeng, Lin, Hong, Ji, Xincun, Xu, Yue
Format:	Artikel
Sprache:	eng
Schlagworte:	Breakdown Devices Electric fields Electric potential Mathematical analysis Mathematical models Poisson equation Two dimensional Voltage
Online-Zugang:	Volltext
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