Analytical model for silicon-on-insulator lateral high-voltage devices using variation of lateral thickness technique

Recently, the variation of lateral thickness (VLT) technique has been proposed as an effective lateral voltage-sustaining technology. However, no analytical model has been reported for exploring the physical mechanism quantitatively. By solving the two-dimensional (2D) Poisson equation, an analytica...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2015-02, Vol.54 (2), p.24301-1-024301-6
Hauptverfasser:	Yao, Jiafei, Guo, Yufeng, Li, Man, Huang, Xiaofeng, Lin, Hong, Ji, Xincun, Xu, Yue
Format:	Artikel
Sprache:	eng
Schlagworte:	Breakdown Devices Electric fields Electric potential Mathematical analysis Mathematical models Poisson equation Two dimensional Voltage
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container_end_page	1-024301-6
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container_title	Japanese Journal of Applied Physics
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creator	Yao, Jiafei Guo, Yufeng Li, Man Huang, Xiaofeng Lin, Hong Ji, Xincun Xu, Yue
description	Recently, the variation of lateral thickness (VLT) technique has been proposed as an effective lateral voltage-sustaining technology. However, no analytical model has been reported for exploring the physical mechanism quantitatively. By solving the two-dimensional (2D) Poisson equation, an analytical model for a silicon-on-insulator (SOI) device with a VLT structure is proposed in this paper to optimize the surface potential and electric field distribution of the VLT SOI device. The lateral and vertical breakdown voltages are formulized to quantify the breakdown characteristic. The drift doping concentration range is derived to maximize the breakdown voltage. This model is used to investigate the electric field distribution and breakdown voltage of the VLT SOI device with various parameters. The validity of the proposed model is verified by the fair agreement between the analytical and numerical results.
doi_str_mv	10.7567/JJAP.54.024301
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J. Appl. Phys</addtitle><description>Recently, the variation of lateral thickness (VLT) technique has been proposed as an effective lateral voltage-sustaining technology. However, no analytical model has been reported for exploring the physical mechanism quantitatively. By solving the two-dimensional (2D) Poisson equation, an analytical model for a silicon-on-insulator (SOI) device with a VLT structure is proposed in this paper to optimize the surface potential and electric field distribution of the VLT SOI device. The lateral and vertical breakdown voltages are formulized to quantify the breakdown characteristic. The drift doping concentration range is derived to maximize the breakdown voltage. This model is used to investigate the electric field distribution and breakdown voltage of the VLT SOI device with various parameters. 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J. Appl. Phys</addtitle><date>2015-02-01</date><risdate>2015</risdate><volume>54</volume><issue>2</issue><spage>24301</spage><epage>1-024301-6</epage><pages>24301-1-024301-6</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPB6</coden><abstract>Recently, the variation of lateral thickness (VLT) technique has been proposed as an effective lateral voltage-sustaining technology. However, no analytical model has been reported for exploring the physical mechanism quantitatively. By solving the two-dimensional (2D) Poisson equation, an analytical model for a silicon-on-insulator (SOI) device with a VLT structure is proposed in this paper to optimize the surface potential and electric field distribution of the VLT SOI device. The lateral and vertical breakdown voltages are formulized to quantify the breakdown characteristic. The drift doping concentration range is derived to maximize the breakdown voltage. 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subjects	Breakdown Devices Electric fields Electric potential Mathematical analysis Mathematical models Poisson equation Two dimensional Voltage
title	Analytical model for silicon-on-insulator lateral high-voltage devices using variation of lateral thickness technique
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