Enhanced growth of highly lattice-mismatched CdSe on GaAs substrates by molecular beam epitaxy

► Zinc-blende CdSe epilayers were grown on GaAs substrate by molecular beam epitaxy. ► Surface diffusion of Cd atoms was enhanced by introducing a small amount of Te atoms. ► The improvements in structural quality and optical properties were found. This work demonstrates the improvement of the molec...

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Veröffentlicht in:	Applied surface science 2013-04, Vol.270, p.751-754
Hauptverfasser:	Wang, Jyh-Shyang, Tsai, Yu-Hsuan, Wang, Hsiao-Hua, Ke, Han-Xiang, Tong, Shih-Chang, Yang, Chu-Shou, Wu, Chih-Hung, Shen, Ji-Lin
Format:	Artikel
Sprache:	eng
Schlagworte:	Cadmium selenides Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Gallium arsenide Gallium arsenides Integrals Intermetallics Lattices Molecular beam epitaxy Photoluminescence Physics Reflection Reflection high-energy electron diffraction X-ray diffraction X-rays Zinc-blende CdSe epilayer
Online-Zugang:	Volltext
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