Work Function Enhancement of Indium Tin Oxide via Oxygen Plasma Immersion Ion Implantation

Indium tin oxide (ITO) transparent conducting film was treated with oxygen plasma immersion ion implantation (PIII). X-ray photoelectron spectroscopy (XPS) was employed to characterize the effect. The results suggested that the oxygen content in the surface was increased and maintained for more than...

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Veröffentlicht in:Plasma science & technology 2013-08, Vol.15 (8), p.791-793
1. Verfasser: 高欢忠 何龙 何志江 李泽斌 吴忠航 成卫海 艾畦 范晓轩 区琼荣 梁荣庆
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creator 高欢忠 何龙 何志江 李泽斌 吴忠航 成卫海 艾畦 范晓轩 区琼荣 梁荣庆
description Indium tin oxide (ITO) transparent conducting film was treated with oxygen plasma immersion ion implantation (PIII). X-ray photoelectron spectroscopy (XPS) was employed to characterize the effect. The results suggested that the oxygen content in the surface was increased and maintained for more than 50 h compared with traditional plasma-treated samples. Meanwhile, the work function of ITO estimated by comparing the peak shift in the XPS diagram suggested a corresponding increase by more than 1 eV.
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fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1685761440</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><cqvip_id>46686244</cqvip_id><sourcerecordid>1685761440</sourcerecordid><originalsourceid>FETCH-LOGICAL-c304t-f37366f6fdf44700d6f140d9475380da3a50d3b3084d7b88288f2e3084818db23</originalsourceid><addsrcrecordid>eNo9kDFPwzAQhT2ARCn8ADazsYSeY8dxR1S1EKlSGYqQWCw3tltD7LRxgui_J1GrDqe7d7rv6fQQeiDwTECICQGYJsApTEg26SW7QqPL7gbdxvgNkLGpoCP09Vk3P3jRhbJ1dcDzsFOhNN6EFtcWF0G7zuO1C3j157TBv07103FrAn6vVPQKF96bJg5sMZTfVyq0ajC7Q9dWVdHcn_sYfSzm69lbsly9FrOXZVJSYG1iaU45t9xqy1gOoLklDPSU5RkVoBVVGWi6oSCYzjdCpELY1AxSEKE3KR2jp5PvvqkPnYmt9C6WpuofMXUXJeEiyzlhDPpTcjotmzrGxli5b5xXzVESkEN2cshJDjlJkslesp55PDO7OmwPLmwvEONc8JQx-g-PUW3Z</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1685761440</pqid></control><display><type>article</type><title>Work Function Enhancement of Indium Tin Oxide via Oxygen Plasma Immersion Ion Implantation</title><source>IOP Publishing Journals</source><creator>高欢忠 何龙 何志江 李泽斌 吴忠航 成卫海 艾畦 范晓轩 区琼荣 梁荣庆</creator><creatorcontrib>高欢忠 何龙 何志江 李泽斌 吴忠航 成卫海 艾畦 范晓轩 区琼荣 梁荣庆</creatorcontrib><description>Indium tin oxide (ITO) transparent conducting film was treated with oxygen plasma immersion ion implantation (PIII). X-ray photoelectron spectroscopy (XPS) was employed to characterize the effect. The results suggested that the oxygen content in the surface was increased and maintained for more than 50 h compared with traditional plasma-treated samples. Meanwhile, the work function of ITO estimated by comparing the peak shift in the XPS diagram suggested a corresponding increase by more than 1 eV.</description><identifier>ISSN: 1009-0630</identifier><identifier>DOI: 10.1088/1009-0630/15/8/14</identifier><language>eng</language><subject>Conduction ; Immersion ; Indium tin oxide ; Ion implantation ; Oxygen content ; Oxygen plasma ; Work functions ; X-ray photoelectron spectroscopy ; X-rays ; X射线光电子能谱 ; 功能增强 ; 氧化铟锡 ; 等离子体处理 ; 等离子体浸没离子注入 ; 过氧 ; 透明导电膜 ; 铟锡氧化物</subject><ispartof>Plasma science &amp; technology, 2013-08, Vol.15 (8), p.791-793</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c304t-f37366f6fdf44700d6f140d9475380da3a50d3b3084d7b88288f2e3084818db23</citedby><cites>FETCH-LOGICAL-c304t-f37366f6fdf44700d6f140d9475380da3a50d3b3084d7b88288f2e3084818db23</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttp://image.cqvip.com/vip1000/qk/84262X/84262X.jpg</thumbnail><link.rule.ids>314,777,781,27905,27906</link.rule.ids></links><search><creatorcontrib>高欢忠 何龙 何志江 李泽斌 吴忠航 成卫海 艾畦 范晓轩 区琼荣 梁荣庆</creatorcontrib><title>Work Function Enhancement of Indium Tin Oxide via Oxygen Plasma Immersion Ion Implantation</title><title>Plasma science &amp; technology</title><addtitle>Plasma Science & Technology</addtitle><description>Indium tin oxide (ITO) transparent conducting film was treated with oxygen plasma immersion ion implantation (PIII). X-ray photoelectron spectroscopy (XPS) was employed to characterize the effect. The results suggested that the oxygen content in the surface was increased and maintained for more than 50 h compared with traditional plasma-treated samples. Meanwhile, the work function of ITO estimated by comparing the peak shift in the XPS diagram suggested a corresponding increase by more than 1 eV.</description><subject>Conduction</subject><subject>Immersion</subject><subject>Indium tin oxide</subject><subject>Ion implantation</subject><subject>Oxygen content</subject><subject>Oxygen plasma</subject><subject>Work functions</subject><subject>X-ray photoelectron spectroscopy</subject><subject>X-rays</subject><subject>X射线光电子能谱</subject><subject>功能增强</subject><subject>氧化铟锡</subject><subject>等离子体处理</subject><subject>等离子体浸没离子注入</subject><subject>过氧</subject><subject>透明导电膜</subject><subject>铟锡氧化物</subject><issn>1009-0630</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNo9kDFPwzAQhT2ARCn8ADazsYSeY8dxR1S1EKlSGYqQWCw3tltD7LRxgui_J1GrDqe7d7rv6fQQeiDwTECICQGYJsApTEg26SW7QqPL7gbdxvgNkLGpoCP09Vk3P3jRhbJ1dcDzsFOhNN6EFtcWF0G7zuO1C3j157TBv07103FrAn6vVPQKF96bJg5sMZTfVyq0ajC7Q9dWVdHcn_sYfSzm69lbsly9FrOXZVJSYG1iaU45t9xqy1gOoLklDPSU5RkVoBVVGWi6oSCYzjdCpELY1AxSEKE3KR2jp5PvvqkPnYmt9C6WpuofMXUXJeEiyzlhDPpTcjotmzrGxli5b5xXzVESkEN2cshJDjlJkslesp55PDO7OmwPLmwvEONc8JQx-g-PUW3Z</recordid><startdate>20130801</startdate><enddate>20130801</enddate><creator>高欢忠 何龙 何志江 李泽斌 吴忠航 成卫海 艾畦 范晓轩 区琼荣 梁荣庆</creator><scope>2RA</scope><scope>92L</scope><scope>CQIGP</scope><scope>W92</scope><scope>~WA</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20130801</creationdate><title>Work Function Enhancement of Indium Tin Oxide via Oxygen Plasma Immersion Ion Implantation</title><author>高欢忠 何龙 何志江 李泽斌 吴忠航 成卫海 艾畦 范晓轩 区琼荣 梁荣庆</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c304t-f37366f6fdf44700d6f140d9475380da3a50d3b3084d7b88288f2e3084818db23</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Conduction</topic><topic>Immersion</topic><topic>Indium tin oxide</topic><topic>Ion implantation</topic><topic>Oxygen content</topic><topic>Oxygen plasma</topic><topic>Work functions</topic><topic>X-ray photoelectron spectroscopy</topic><topic>X-rays</topic><topic>X射线光电子能谱</topic><topic>功能增强</topic><topic>氧化铟锡</topic><topic>等离子体处理</topic><topic>等离子体浸没离子注入</topic><topic>过氧</topic><topic>透明导电膜</topic><topic>铟锡氧化物</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>高欢忠 何龙 何志江 李泽斌 吴忠航 成卫海 艾畦 范晓轩 区琼荣 梁荣庆</creatorcontrib><collection>中文科技期刊数据库</collection><collection>中文科技期刊数据库-CALIS站点</collection><collection>中文科技期刊数据库-7.0平台</collection><collection>中文科技期刊数据库-工程技术</collection><collection>中文科技期刊数据库- 镜像站点</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Plasma science &amp; technology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>高欢忠 何龙 何志江 李泽斌 吴忠航 成卫海 艾畦 范晓轩 区琼荣 梁荣庆</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Work Function Enhancement of Indium Tin Oxide via Oxygen Plasma Immersion Ion Implantation</atitle><jtitle>Plasma science &amp; technology</jtitle><addtitle>Plasma Science & Technology</addtitle><date>2013-08-01</date><risdate>2013</risdate><volume>15</volume><issue>8</issue><spage>791</spage><epage>793</epage><pages>791-793</pages><issn>1009-0630</issn><abstract>Indium tin oxide (ITO) transparent conducting film was treated with oxygen plasma immersion ion implantation (PIII). X-ray photoelectron spectroscopy (XPS) was employed to characterize the effect. The results suggested that the oxygen content in the surface was increased and maintained for more than 50 h compared with traditional plasma-treated samples. Meanwhile, the work function of ITO estimated by comparing the peak shift in the XPS diagram suggested a corresponding increase by more than 1 eV.</abstract><doi>10.1088/1009-0630/15/8/14</doi><tpages>3</tpages></addata></record>
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subjects Conduction
Immersion
Indium tin oxide
Ion implantation
Oxygen content
Oxygen plasma
Work functions
X-ray photoelectron spectroscopy
X-rays
X射线光电子能谱
功能增强
氧化铟锡
等离子体处理
等离子体浸没离子注入
过氧
透明导电膜
铟锡氧化物
title Work Function Enhancement of Indium Tin Oxide via Oxygen Plasma Immersion Ion Implantation
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-18T15%3A45%3A00IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Work%20Function%20Enhancement%20of%20Indium%20Tin%20Oxide%20via%20Oxygen%20Plasma%20Immersion%20Ion%20Implantation&rft.jtitle=Plasma%20science%20&%20technology&rft.au=%E9%AB%98%E6%AC%A2%E5%BF%A0%20%E4%BD%95%E9%BE%99%20%E4%BD%95%E5%BF%97%E6%B1%9F%20%E6%9D%8E%E6%B3%BD%E6%96%8C%20%E5%90%B4%E5%BF%A0%E8%88%AA%20%E6%88%90%E5%8D%AB%E6%B5%B7%20%E8%89%BE%E7%95%A6%20%E8%8C%83%E6%99%93%E8%BD%A9%20%E5%8C%BA%E7%90%BC%E8%8D%A3%20%E6%A2%81%E8%8D%A3%E5%BA%86&rft.date=2013-08-01&rft.volume=15&rft.issue=8&rft.spage=791&rft.epage=793&rft.pages=791-793&rft.issn=1009-0630&rft_id=info:doi/10.1088/1009-0630/15/8/14&rft_dat=%3Cproquest_cross%3E1685761440%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1685761440&rft_id=info:pmid/&rft_cqvip_id=46686244&rfr_iscdi=true