Two Types of On-State Observed in the Operation of a Redox-Based Three-Terminal Device
A redox-based three-terminal device was fabricated using Ta2O5 as the ionic transfer material, and its operation was investigated. We found that application of a negative polarity gate bias, which increases oxygen anions in the channel regions, can make a conductive path between a source electrode a...
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| Veröffentlicht in: | Key engineering materials 2013-12, Vol.596, p.111-115 |
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| container_title | Key engineering materials |
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| creator | Itoh, Yaomi Tsuruoka, Tohru Hasegawa, Tsuyoshi Yamaguchi, Shu Wang, Qi Hiramoto, Toshiro Watanabe, Satoshi Aono, Masakazu |
| description | A redox-based three-terminal device was fabricated using Ta2O5 as the ionic transfer material, and its operation was investigated. We found that application of a negative polarity gate bias, which increases oxygen anions in the channel regions, can make a conductive path between a source electrode and a drain electrode. The insulating state of the pristine device is turned on to a semiconductor state by the application of a negative polarity gate bias. Since turning off to the insulating state could not be achieved, the switching process resembles the soft breakdown of the first turning-on process of oxygen vacancy controlled resistive random access memories, although the polarity of the bias is opposite to that used in the first turning-on process. Further application of a gate bias causes a transition from the semiconductor state to a metal state. Accordingly, there are two types of on-state. It is possible to switch between the semiconductor and metal states. |
| doi_str_mv | 10.4028/www.scientific.net/KEM.596.111 |
| format | Article |
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We found that application of a negative polarity gate bias, which increases oxygen anions in the channel regions, can make a conductive path between a source electrode and a drain electrode. The insulating state of the pristine device is turned on to a semiconductor state by the application of a negative polarity gate bias. Since turning off to the insulating state could not be achieved, the switching process resembles the soft breakdown of the first turning-on process of oxygen vacancy controlled resistive random access memories, although the polarity of the bias is opposite to that used in the first turning-on process. Further application of a gate bias causes a transition from the semiconductor state to a metal state. Accordingly, there are two types of on-state. 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| subjects | Bias Channels Devices Drains Electrodes Gates Polarity Semiconductors |
| title | Two Types of On-State Observed in the Operation of a Redox-Based Three-Terminal Device |
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