Design and Experiment of Thermal Contact Sensor Detecting Defects on Si Wafer Surface
A deign study of a thermal-type contact sensor for the detection of small defects, the heights of which are less than 16 nm on the wafer surface, is described in this paper. The feasibility of the contact sensor, which would detect frictional heat generated at the contact with defects, was theoretic...
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Veröffentlicht in: | Key engineering materials 2012-11, Vol.523-524, p.826-831 |
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description | A deign study of a thermal-type contact sensor for the detection of small defects, the heights of which are less than 16 nm on the wafer surface, is described in this paper. The feasibility of the contact sensor, which would detect frictional heat generated at the contact with defects, was theoretically investigated focusing on the temperature rise of the sensor element. To investigate the temperature rise of the contact sensor due to the generated frictional heat, both the theoretical calculation with simple model of heat transfer and a simulation with a finite element model (FEM) was carried out. Relationship between the sensor size and the response of the temperature rise of the contact sensor was also investigated by using FEM simulation. |
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Relationship between the sensor size and the response of the temperature rise of the contact sensor was also investigated by using FEM simulation.</description><subject>Computer simulation</subject><subject>Contact</subject><subject>Defects</subject><subject>Finite element method</subject><subject>Mathematical analysis</subject><subject>Mathematical models</subject><subject>Sensors</subject><subject>Wafers</subject><issn>1013-9826</issn><issn>1662-9795</issn><issn>1662-9795</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNqVkE1LAzEQhhdRsFb_Q44i7DbJ7qbJUdv6gRUPbfEYQnbSbmmzNUmp_ntHKnjVwzAvw8sz8GTZDaNFRbkcHA6HItoWfGpdawsPafA8eSlqXuY1rwrJxUnWY0LwXA1VfYqZsjJXeD_PLmJcU1oyyepethhDbJeeGN-QyccOQrtFKOkcma8gbM2GjDqfjE1kBj52gYwhgU2tX2JymCLpPJm15M04CGS2D85YuMzOnNlEuPrZ_WxxP5mPHvPp68PT6Haa22rIU84q3jRSsqrmrJQCDICTQ6acck4K4xpVckqhYtTWtTOMMWWNMMIZZxlQUfaz6yN3F7r3PcSkt220sNkYD90-aiaGklKBH_5QxVdK0ZJi9e5YtaGLMYDTO9RiwqdmVH_r16hf_-rXqF-jfo36cSqNmhEyPkJSMD6is5Ved_vgUcd_MF80MpfU</recordid><startdate>20121101</startdate><enddate>20121101</enddate><creator>Lu, Wen Jian</creator><creator>Ito, So</creator><creator>Gao, Wei</creator><creator>Shimizu, Yuki</creator><general>Trans Tech Publications Ltd</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20121101</creationdate><title>Design and Experiment of Thermal Contact Sensor Detecting Defects on Si Wafer Surface</title><author>Lu, Wen Jian ; Ito, So ; Gao, Wei ; Shimizu, Yuki</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c472t-142dd8814521386eaeef8719f9ff86afd93200e410c55fa1119ca6a6fafc1e063</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Computer simulation</topic><topic>Contact</topic><topic>Defects</topic><topic>Finite element method</topic><topic>Mathematical analysis</topic><topic>Mathematical models</topic><topic>Sensors</topic><topic>Wafers</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lu, Wen Jian</creatorcontrib><creatorcontrib>Ito, So</creatorcontrib><creatorcontrib>Gao, Wei</creatorcontrib><creatorcontrib>Shimizu, Yuki</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Key engineering materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lu, Wen Jian</au><au>Ito, So</au><au>Gao, Wei</au><au>Shimizu, Yuki</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Design and Experiment of Thermal Contact Sensor Detecting Defects on Si Wafer Surface</atitle><jtitle>Key engineering materials</jtitle><date>2012-11-01</date><risdate>2012</risdate><volume>523-524</volume><spage>826</spage><epage>831</epage><pages>826-831</pages><issn>1013-9826</issn><issn>1662-9795</issn><eissn>1662-9795</eissn><abstract>A deign study of a thermal-type contact sensor for the detection of small defects, the heights of which are less than 16 nm on the wafer surface, is described in this paper. The feasibility of the contact sensor, which would detect frictional heat generated at the contact with defects, was theoretically investigated focusing on the temperature rise of the sensor element. To investigate the temperature rise of the contact sensor due to the generated frictional heat, both the theoretical calculation with simple model of heat transfer and a simulation with a finite element model (FEM) was carried out. Relationship between the sensor size and the response of the temperature rise of the contact sensor was also investigated by using FEM simulation.</abstract><pub>Trans Tech Publications Ltd</pub><doi>10.4028/www.scientific.net/KEM.523-524.826</doi><tpages>6</tpages></addata></record> |
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subjects | Computer simulation Contact Defects Finite element method Mathematical analysis Mathematical models Sensors Wafers |
title | Design and Experiment of Thermal Contact Sensor Detecting Defects on Si Wafer Surface |
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