Effect of γ-irradiation on the optical and electrical properties of PbxGe42−xSe48Te10

The composition dependence of optical and electrical of amorphous unirradiated and γ-irradiated thin films of PbxGe42-xSe48Te10 (5≤x ≤16) deposited by thermal evaporation was measured as a function of wavelength (0.3μm≤λ≤2.5μm). The optical transition was found to be indirect. The optical energy gap...

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Veröffentlicht in:	Journal of non-crystalline solids 2015-03, Vol.412, p.53-57
Hauptverfasser:	Mansour, B.A., Gad, S.A., Eissa, Hoda Mohamed
Format:	Artikel
Sprache:	eng
Schlagworte:	Amorphous semiconductors Bond energy Concentration (composition) Constants Deposition Electrical conduction Electronics Energy gap Lead (metal) Optical and electrical properties Optical transition γ-Radiation
Online-Zugang:	Volltext
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