Molecular dynamics simulations of clusters and thin film growth in the context of plasma sputtering deposition

Carrying out molecular dynamics (MD) simulations is a relevant way to understand growth phenomena at the atomic scale. Initial conditions are defined for reproducing deposition conditions of plasma sputtering experiments. Two case studies are developed to highlight the implementation of MD simulatio...

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Veröffentlicht in:Journal of physics. D, Applied physics Applied physics, 2014-06, Vol.47 (22), p.1-17
Hauptverfasser: Xie, Lu, Brault, Pascal, Bauchire, Jean-Marc, Thomann, Anne-Lise, Bedra, Larbi
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container_end_page 17
container_issue 22
container_start_page 1
container_title Journal of physics. D, Applied physics
container_volume 47
creator Xie, Lu
Brault, Pascal
Bauchire, Jean-Marc
Thomann, Anne-Lise
Bedra, Larbi
description Carrying out molecular dynamics (MD) simulations is a relevant way to understand growth phenomena at the atomic scale. Initial conditions are defined for reproducing deposition conditions of plasma sputtering experiments. Two case studies are developed to highlight the implementation of MD simulations in the context of plasma sputtering deposition: ZrxCu1−x metallic glass and AlCoCrCuFeNi high entropy alloy thin films deposited onto silicon. Effects of depositing atom kinetic energies and atomic composition are studied in order to predict the evolution of morphologies and atomic structure of MD grown thin films. Experimental and simulated x-ray diffraction patterns are compared.
doi_str_mv 10.1088/0022-3727/47/22/224004
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fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1678001237</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1678001237</sourcerecordid><originalsourceid>FETCH-LOGICAL-c446t-2b959c4c2e71ff4642d71764f9501721901c0f7613730b44d6821c6d51f82d9a3</originalsourceid><addsrcrecordid>eNqFkUFv1DAQhS0EEkvhLyAf4RB2xnHs5FhV0CIt6qWcLddxuq4cO9gO0H-Po6BeK43k8eh7byw_Qj4ifEHo-yMAY00rmTxyeWSsFgfgr8gBW4GN4KJ9TQ7P0FvyLudHAOhEjwcSfkRvzep1ouNT0LMzmWY310FxMWQaJ2r8motNmeow0nJ2gU7Oz_QhxT_lTOu1nC01MRT7t2z84nWeNc3LWqrMhQc62iVmtxm-J28m7bP98P-8ID-_fb27umlOt9ffry5PjeFclIbdD91guGFW4jRxwdkoUQo-DR2gZDgAGpikwFa2cM_5KHqGRowdTj0bB91ekM-771l7tSQ36_Skonbq5vKkthnA0HXV7DdW9tPOLin-Wm0uanbZWO91sHHNCoXsAZDVXS-inZDQSxSiomJHTYo5Jzs9PwNBbbmpLRK1RaK4VLXdc6tCtgtdXNRjXFOoH_WS6B9gw5kF</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1567087166</pqid></control><display><type>article</type><title>Molecular dynamics simulations of clusters and thin film growth in the context of plasma sputtering deposition</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>Xie, Lu ; Brault, Pascal ; Bauchire, Jean-Marc ; Thomann, Anne-Lise ; Bedra, Larbi</creator><creatorcontrib>Xie, Lu ; Brault, Pascal ; Bauchire, Jean-Marc ; Thomann, Anne-Lise ; Bedra, Larbi</creatorcontrib><description>Carrying out molecular dynamics (MD) simulations is a relevant way to understand growth phenomena at the atomic scale. Initial conditions are defined for reproducing deposition conditions of plasma sputtering experiments. Two case studies are developed to highlight the implementation of MD simulations in the context of plasma sputtering deposition: ZrxCu1−x metallic glass and AlCoCrCuFeNi high entropy alloy thin films deposited onto silicon. Effects of depositing atom kinetic energies and atomic composition are studied in order to predict the evolution of morphologies and atomic structure of MD grown thin films. Experimental and simulated x-ray diffraction patterns are compared.</description><identifier>ISSN: 0022-3727</identifier><identifier>EISSN: 1361-6463</identifier><identifier>DOI: 10.1088/0022-3727/47/22/224004</identifier><identifier>CODEN: JPAPBE</identifier><language>eng</language><publisher>IOP Publishing</publisher><subject>Atomic structure ; cluster growth ; Deposition ; Engineering Sciences ; Entropy ; Molecular dynamics ; Plasma (physics) ; plasma sputtering ; Plasmas ; Simulation ; Sputtering ; thin film growth ; Thin films</subject><ispartof>Journal of physics. D, Applied physics, 2014-06, Vol.47 (22), p.1-17</ispartof><rights>2014 IOP Publishing Ltd</rights><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c446t-2b959c4c2e71ff4642d71764f9501721901c0f7613730b44d6821c6d51f82d9a3</citedby><cites>FETCH-LOGICAL-c446t-2b959c4c2e71ff4642d71764f9501721901c0f7613730b44d6821c6d51f82d9a3</cites><orcidid>0000-0002-7226-0464 ; 0000-0002-8380-480X</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.1088/0022-3727/47/22/224004/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>230,314,776,780,881,27901,27902,53821,53868</link.rule.ids><backlink>$$Uhttps://hal.science/hal-00955501$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>Xie, Lu</creatorcontrib><creatorcontrib>Brault, Pascal</creatorcontrib><creatorcontrib>Bauchire, Jean-Marc</creatorcontrib><creatorcontrib>Thomann, Anne-Lise</creatorcontrib><creatorcontrib>Bedra, Larbi</creatorcontrib><title>Molecular dynamics simulations of clusters and thin film growth in the context of plasma sputtering deposition</title><title>Journal of physics. D, Applied physics</title><addtitle>JPhysD</addtitle><addtitle>J. Phys. D: Appl. Phys</addtitle><description>Carrying out molecular dynamics (MD) simulations is a relevant way to understand growth phenomena at the atomic scale. Initial conditions are defined for reproducing deposition conditions of plasma sputtering experiments. Two case studies are developed to highlight the implementation of MD simulations in the context of plasma sputtering deposition: ZrxCu1−x metallic glass and AlCoCrCuFeNi high entropy alloy thin films deposited onto silicon. Effects of depositing atom kinetic energies and atomic composition are studied in order to predict the evolution of morphologies and atomic structure of MD grown thin films. Experimental and simulated x-ray diffraction patterns are compared.</description><subject>Atomic structure</subject><subject>cluster growth</subject><subject>Deposition</subject><subject>Engineering Sciences</subject><subject>Entropy</subject><subject>Molecular dynamics</subject><subject>Plasma (physics)</subject><subject>plasma sputtering</subject><subject>Plasmas</subject><subject>Simulation</subject><subject>Sputtering</subject><subject>thin film growth</subject><subject>Thin films</subject><issn>0022-3727</issn><issn>1361-6463</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNqFkUFv1DAQhS0EEkvhLyAf4RB2xnHs5FhV0CIt6qWcLddxuq4cO9gO0H-Po6BeK43k8eh7byw_Qj4ifEHo-yMAY00rmTxyeWSsFgfgr8gBW4GN4KJ9TQ7P0FvyLudHAOhEjwcSfkRvzep1ouNT0LMzmWY310FxMWQaJ2r8motNmeow0nJ2gU7Oz_QhxT_lTOu1nC01MRT7t2z84nWeNc3LWqrMhQc62iVmtxm-J28m7bP98P-8ID-_fb27umlOt9ffry5PjeFclIbdD91guGFW4jRxwdkoUQo-DR2gZDgAGpikwFa2cM_5KHqGRowdTj0bB91ekM-771l7tSQ36_Skonbq5vKkthnA0HXV7DdW9tPOLin-Wm0uanbZWO91sHHNCoXsAZDVXS-inZDQSxSiomJHTYo5Jzs9PwNBbbmpLRK1RaK4VLXdc6tCtgtdXNRjXFOoH_WS6B9gw5kF</recordid><startdate>20140604</startdate><enddate>20140604</enddate><creator>Xie, Lu</creator><creator>Brault, Pascal</creator><creator>Bauchire, Jean-Marc</creator><creator>Thomann, Anne-Lise</creator><creator>Bedra, Larbi</creator><general>IOP Publishing</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SC</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>JQ2</scope><scope>L7M</scope><scope>L~C</scope><scope>L~D</scope><scope>1XC</scope><scope>VOOES</scope><orcidid>https://orcid.org/0000-0002-7226-0464</orcidid><orcidid>https://orcid.org/0000-0002-8380-480X</orcidid></search><sort><creationdate>20140604</creationdate><title>Molecular dynamics simulations of clusters and thin film growth in the context of plasma sputtering deposition</title><author>Xie, Lu ; Brault, Pascal ; Bauchire, Jean-Marc ; Thomann, Anne-Lise ; Bedra, Larbi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c446t-2b959c4c2e71ff4642d71764f9501721901c0f7613730b44d6821c6d51f82d9a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Atomic structure</topic><topic>cluster growth</topic><topic>Deposition</topic><topic>Engineering Sciences</topic><topic>Entropy</topic><topic>Molecular dynamics</topic><topic>Plasma (physics)</topic><topic>plasma sputtering</topic><topic>Plasmas</topic><topic>Simulation</topic><topic>Sputtering</topic><topic>thin film growth</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Xie, Lu</creatorcontrib><creatorcontrib>Brault, Pascal</creatorcontrib><creatorcontrib>Bauchire, Jean-Marc</creatorcontrib><creatorcontrib>Thomann, Anne-Lise</creatorcontrib><creatorcontrib>Bedra, Larbi</creatorcontrib><collection>CrossRef</collection><collection>Computer and Information Systems Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>ProQuest Computer Science Collection</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Computer and Information Systems Abstracts – Academic</collection><collection>Computer and Information Systems Abstracts Professional</collection><collection>Hyper Article en Ligne (HAL)</collection><collection>Hyper Article en Ligne (HAL) (Open Access)</collection><jtitle>Journal of physics. D, Applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Xie, Lu</au><au>Brault, Pascal</au><au>Bauchire, Jean-Marc</au><au>Thomann, Anne-Lise</au><au>Bedra, Larbi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Molecular dynamics simulations of clusters and thin film growth in the context of plasma sputtering deposition</atitle><jtitle>Journal of physics. D, Applied physics</jtitle><stitle>JPhysD</stitle><addtitle>J. Phys. D: Appl. Phys</addtitle><date>2014-06-04</date><risdate>2014</risdate><volume>47</volume><issue>22</issue><spage>1</spage><epage>17</epage><pages>1-17</pages><issn>0022-3727</issn><eissn>1361-6463</eissn><coden>JPAPBE</coden><abstract>Carrying out molecular dynamics (MD) simulations is a relevant way to understand growth phenomena at the atomic scale. Initial conditions are defined for reproducing deposition conditions of plasma sputtering experiments. Two case studies are developed to highlight the implementation of MD simulations in the context of plasma sputtering deposition: ZrxCu1−x metallic glass and AlCoCrCuFeNi high entropy alloy thin films deposited onto silicon. Effects of depositing atom kinetic energies and atomic composition are studied in order to predict the evolution of morphologies and atomic structure of MD grown thin films. Experimental and simulated x-ray diffraction patterns are compared.</abstract><pub>IOP Publishing</pub><doi>10.1088/0022-3727/47/22/224004</doi><tpages>17</tpages><orcidid>https://orcid.org/0000-0002-7226-0464</orcidid><orcidid>https://orcid.org/0000-0002-8380-480X</orcidid><oa>free_for_read</oa></addata></record>
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source IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link
subjects Atomic structure
cluster growth
Deposition
Engineering Sciences
Entropy
Molecular dynamics
Plasma (physics)
plasma sputtering
Plasmas
Simulation
Sputtering
thin film growth
Thin films
title Molecular dynamics simulations of clusters and thin film growth in the context of plasma sputtering deposition
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-20T20%3A57%3A21IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Molecular%20dynamics%20simulations%20of%20clusters%20and%20thin%20film%20growth%20in%20the%20context%20of%20plasma%20sputtering%20deposition&rft.jtitle=Journal%20of%20physics.%20D,%20Applied%20physics&rft.au=Xie,%20Lu&rft.date=2014-06-04&rft.volume=47&rft.issue=22&rft.spage=1&rft.epage=17&rft.pages=1-17&rft.issn=0022-3727&rft.eissn=1361-6463&rft.coden=JPAPBE&rft_id=info:doi/10.1088/0022-3727/47/22/224004&rft_dat=%3Cproquest_cross%3E1678001237%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1567087166&rft_id=info:pmid/&rfr_iscdi=true