$Quantitative monitoring of InAs quantum dot growth using X-ray diffraction$

Quantitative monitoring of InAs quantum dot growth using X-ray diffraction

Synchrotron X-ray diffraction has been applied to the in situ monitoring of the molecular beam epitaxial growth of self-assembled InAs/GaAs(001) quantum dots (QDs). As well as the strain distribution inside QDs, the lateral and vertical size of QDs was determined as a function of growth time. In com...

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Veröffentlicht in:	Journal of crystal growth 2014-09, Vol.401, p.376-380
1. Verfasser:	Takahasi, Masamitu
Format:	Artikel
Sprache:	eng
Schlagworte:	Crystal growth Diffraction Evolution Indium arsenides Molecular beam epitaxy Monitoring Quantum dots Synchrotrons X-rays
Online-Zugang:	Volltext
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