Quantitative monitoring of InAs quantum dot growth using X-ray diffraction
Synchrotron X-ray diffraction has been applied to the in situ monitoring of the molecular beam epitaxial growth of self-assembled InAs/GaAs(001) quantum dots (QDs). As well as the strain distribution inside QDs, the lateral and vertical size of QDs was determined as a function of growth time. In com...
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| Veröffentlicht in: | Journal of crystal growth 2014-09, Vol.401, p.376-380 |
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| container_title | Journal of crystal growth |
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| creator | Takahasi, Masamitu |
| description | Synchrotron X-ray diffraction has been applied to the in situ monitoring of the molecular beam epitaxial growth of self-assembled InAs/GaAs(001) quantum dots (QDs). As well as the strain distribution inside QDs, the lateral and vertical size of QDs was determined as a function of growth time. In combination with post-growth atomic force microscopy, the evolution of the total volume of QDs was evaluated. It was found that the QD volume increases at a similar rate over the temperature range of 450-480 [degrees]C. A significant mass transport from the wetting layer and the substrate was confirmed. |
| doi_str_mv | 10.1016/j.jcrysgro.2013.12.035 |
| format | Article |
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As well as the strain distribution inside QDs, the lateral and vertical size of QDs was determined as a function of growth time. In combination with post-growth atomic force microscopy, the evolution of the total volume of QDs was evaluated. It was found that the QD volume increases at a similar rate over the temperature range of 450-480 [degrees]C. 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| ispartof | Journal of crystal growth, 2014-09, Vol.401, p.376-380 |
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| language | eng |
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| source | Elsevier ScienceDirect Journals |
| subjects | Crystal growth Diffraction Evolution Indium arsenides Molecular beam epitaxy Monitoring Quantum dots Synchrotrons X-rays |
| title | Quantitative monitoring of InAs quantum dot growth using X-ray diffraction |
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