Application of InN Based Quantum Dot in Reducing Short Circuit Current Variation of Solar Cell above Room Temperature

This paper focuses on the applicability of InN based quantum dot in the active layer of the solar cell to reduce the short circuit current variation above the room temperature. We have investigated numerically the effect of temperature on the short circuit current of the solar cell using InN based q...

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Veröffentlicht in:	Key engineering materials 2013-12, Vol.594-595, p.3-7
Hauptverfasser:	Ramly, N.H., Rosli, F.A., Al-Khateeb, A.N., Rashid, M.A., Malek, F., Humayun, M.A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Alternating current Devices Germanium Mathematical models Photovoltaic cells Qunatum dots Short circuit currents Solar cells
Online-Zugang:	Volltext
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