Role of grain boundaries in the conduction of Eu–Ni substituted Y-type hexaferrites
Single phase nanostructured (Eu–Ni) substituted Y-type hexaferrites with nominal composition of Sr2Co2−xNixEuyFe12−yO22 (x=0.0–1, y=0.0–0.1) were synthesized by the microemulsion method. Temperature dependent DC electrical conductivity and drift mobility were found in good agreement with each other,...
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Veröffentlicht in: | Journal of magnetism and magnetic materials 2014-08, Vol.362, p.115-121 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Single phase nanostructured (Eu–Ni) substituted Y-type hexaferrites with nominal composition of Sr2Co2−xNixEuyFe12−yO22 (x=0.0–1, y=0.0–0.1) were synthesized by the microemulsion method. Temperature dependent DC electrical conductivity and drift mobility were found in good agreement with each other, reflecting semiconducting behavior. The presence of Debye peaks in imaginary electric modulus curves confirmed the existence of relaxation phenomena in given frequency range. The AC conductivity follows power law, with exponent (n) value, ranges from 0.81–0.97, indicating that the mechanism is due to polaron hopping. In the present ferrite system, Cole–Cole plots were used to separate the grain and grain boundary effects. Eu–Ni substitution leads to a remarkable rise of grain boundary resistance as compared to the grain resistance. As both AC conductivity and Cole–Cole plots are the functions of concentration, they reveal the dominant contribution of grain boundaries in the conduction mechanism. It was also observed that the AC activation energy is lower than the DC activation energy. Appreciable improved values of quality factor suggested the possible use of these synthesized materials for power applications and high frequency multilayer chip inductors.
•Single phase nanostructures were synthesized by the micro-emulsion method.•Substitution leads to a remarkable rise of grain boundary resistance.•The AC activation energy is lower than the DC activation energy.•Improved values of quality factor make these materials useful for high frequency multilayer chip inductors. |
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ISSN: | 0304-8853 |
DOI: | 10.1016/j.jmmm.2014.03.022 |