Strategy for silicon based hot-wire chemical vapor deposition without wire silicide formation
Silicide formation of wires during hot-wire chemical vapor deposition (HWCVD) of silicon based coatings is a key challenge which has to be overcome before HWCVD can be transferred successfully into industry. Silicide formation of tungsten wires is not occurring at temperatures of approximately 1900°...
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| Veröffentlicht in: | Thin solid films 2015-01, Vol.575, p.38-41 |
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| creator | Laukart, Artur Harig, Tino Höfer, Markus Schäfer, Lothar |
| description | Silicide formation of wires during hot-wire chemical vapor deposition (HWCVD) of silicon based coatings is a key challenge which has to be overcome before HWCVD can be transferred successfully into industry. Silicide formation of tungsten wires is not occurring at temperatures of approximately 1900°C and above when maintaining a silane partial pressure below approximately 1Pa. Proceeding silicide formation at the cold ends where the wires are electrically contacted was completely prevented by continuously moving the cold ends of the wires into the hot deposition zone, resulting in a retransformation of the tungsten phase. Thus the maintenance period of a HWCVD manufacturing tool can be freed from wire lifetime. |
| doi_str_mv | 10.1016/j.tsf.2014.10.026 |
| format | Article |
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| ispartof | Thin solid films, 2015-01, Vol.575, p.38-41 |
| issn | 0040-6090 1879-2731 |
| language | eng |
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| source | ScienceDirect Journals (5 years ago - present) |
| subjects | Catalytic CVD Chemical vapor deposition Cold working Electric wire Formations Hot-Wire CVD Intermetallics Silicide formation Silicides Silicon Strategy Tungsten Tungsten wire |
| title | Strategy for silicon based hot-wire chemical vapor deposition without wire silicide formation |
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