A novel crystal growth technique from the melt: Levitation-Assisted Self-Seeding Crystal Growth Method
A novel melt crystal growth technique was developed and applied for growing bulk In2O3 single crystals. In this new method the In2O3 starting material inside an inductively heated metal crucible is subjected to a controlled decomposition in such a way that a certain amount of free metallic indium fo...
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Veröffentlicht in: | Journal of crystal growth 2014-02, Vol.388, p.61-69 |
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creator | Galazka, Zbigniew Uecker, Reinhard Fornari, Roberto |
description | A novel melt crystal growth technique was developed and applied for growing bulk In2O3 single crystals. In this new method the In2O3 starting material inside an inductively heated metal crucible is subjected to a controlled decomposition in such a way that a certain amount of free metallic indium forms. As a result, the electromagnetic field from an RF coil couples also to the In2O3 starting material, in addition to the metal crucible, which facilitates the melting. Liquid In2O3 has good electrical conductivity so that eddy currents are induced in the melt close to the crucible wall. This in turn induces a counter magnetic field that ultimately leads to levitation of a portion of the molten In2O3. The amount of the levitated material depends on the mutual RF coil–crucible position, their configurations as well as other components of a growth furnace. A consequence of the partial levitation of In2O3 melt is the formation of a liquid neck between the levitated and the quiescent melt portions. This neck is crucial as it acts as a seed during the crystallization process. The neck can be further shaped by controlled overheating or soaking. By cooling down, two single crystals are formed on the opposite sides of the seed. We named this new crystal growth technique “Levitation-Assisted Self-Seeding Crystal Growth Method”. It is in principle applicable to any oxides whose melts are electrically conductive. Thanks to this method we have successfully grown truly bulk In2O3 single crystals from the melt for the first time worldwide.
•Description of a novel crystal growth method from the melt utilizing an electromagnetic levitation inside a metal crucible.•A portion of the melt is levitated and a liquid neck (seed) is formed between two liquid regions.•During the crystallization process two single crystals are formed on opposite sides of the self-created seed.•That crystal growth technique has been named “Levitation-Assisted Self-Seeding Crystal Growth Method”.•The method has been utilized for growing bulk In2O3 single crystals from the melt for the first time worldwide. |
doi_str_mv | 10.1016/j.jcrysgro.2013.11.049 |
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•Description of a novel crystal growth method from the melt utilizing an electromagnetic levitation inside a metal crucible.•A portion of the melt is levitated and a liquid neck (seed) is formed between two liquid regions.•During the crystallization process two single crystals are formed on opposite sides of the self-created seed.•That crystal growth technique has been named “Levitation-Assisted Self-Seeding Crystal Growth Method”.•The method has been utilized for growing bulk In2O3 single crystals from the melt for the first time worldwide.</description><identifier>ISSN: 0022-0248</identifier><identifier>EISSN: 1873-5002</identifier><identifier>DOI: 10.1016/j.jcrysgro.2013.11.049</identifier><language>eng</language><publisher>Elsevier B.V</publisher><subject>A1. Growth from the melt ; A2. Self created seed ; A3. Electromagnetic levitation ; B1. Bulk In2O3 single crystal ; B2. Transparent semiconducting oxide ; Crucibles ; Crystal growth ; Indium oxides ; Liquids ; Melts ; Melts (crystal growth) ; Necks ; Single crystals</subject><ispartof>Journal of crystal growth, 2014-02, Vol.388, p.61-69</ispartof><rights>2013 Elsevier B.V.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c477t-578a99278e3b0e9fd97c7984882b02af7c0109e3e24c15e25f79b87885f99dfb3</citedby><cites>FETCH-LOGICAL-c477t-578a99278e3b0e9fd97c7984882b02af7c0109e3e24c15e25f79b87885f99dfb3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.jcrysgro.2013.11.049$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3541,27915,27916,45986</link.rule.ids></links><search><creatorcontrib>Galazka, Zbigniew</creatorcontrib><creatorcontrib>Uecker, Reinhard</creatorcontrib><creatorcontrib>Fornari, Roberto</creatorcontrib><title>A novel crystal growth technique from the melt: Levitation-Assisted Self-Seeding Crystal Growth Method</title><title>Journal of crystal growth</title><description>A novel melt crystal growth technique was developed and applied for growing bulk In2O3 single crystals. In this new method the In2O3 starting material inside an inductively heated metal crucible is subjected to a controlled decomposition in such a way that a certain amount of free metallic indium forms. As a result, the electromagnetic field from an RF coil couples also to the In2O3 starting material, in addition to the metal crucible, which facilitates the melting. Liquid In2O3 has good electrical conductivity so that eddy currents are induced in the melt close to the crucible wall. This in turn induces a counter magnetic field that ultimately leads to levitation of a portion of the molten In2O3. The amount of the levitated material depends on the mutual RF coil–crucible position, their configurations as well as other components of a growth furnace. A consequence of the partial levitation of In2O3 melt is the formation of a liquid neck between the levitated and the quiescent melt portions. This neck is crucial as it acts as a seed during the crystallization process. The neck can be further shaped by controlled overheating or soaking. By cooling down, two single crystals are formed on the opposite sides of the seed. We named this new crystal growth technique “Levitation-Assisted Self-Seeding Crystal Growth Method”. It is in principle applicable to any oxides whose melts are electrically conductive. Thanks to this method we have successfully grown truly bulk In2O3 single crystals from the melt for the first time worldwide.
•Description of a novel crystal growth method from the melt utilizing an electromagnetic levitation inside a metal crucible.•A portion of the melt is levitated and a liquid neck (seed) is formed between two liquid regions.•During the crystallization process two single crystals are formed on opposite sides of the self-created seed.•That crystal growth technique has been named “Levitation-Assisted Self-Seeding Crystal Growth Method”.•The method has been utilized for growing bulk In2O3 single crystals from the melt for the first time worldwide.</description><subject>A1. Growth from the melt</subject><subject>A2. Self created seed</subject><subject>A3. Electromagnetic levitation</subject><subject>B1. Bulk In2O3 single crystal</subject><subject>B2. Transparent semiconducting oxide</subject><subject>Crucibles</subject><subject>Crystal growth</subject><subject>Indium oxides</subject><subject>Liquids</subject><subject>Melts</subject><subject>Melts (crystal growth)</subject><subject>Necks</subject><subject>Single crystals</subject><issn>0022-0248</issn><issn>1873-5002</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNqNkbtOAzEQRS0EEuHxC8glzS5j78M2FVHESwqiAGpr4x0TR5s12CaIv8dRoIZmpjn3aDSXkDMGJQPWXqzKlQlf8TX4kgOrSsZKqNUemTApqqIB4PtkkicvgNfykBzFuALISQYTYqd09Bsc6FaRuoFmzWda0oRmObr3D6Q2-DVNS6RrHNIlnePGpS45PxbTGF1M2NMnHGzxhNi78ZXOfkS3O9EDpqXvT8iB7YaIpz_7mLzcXD_P7or54-39bDovTC1EKhohO6W4kFgtAJXtlTBCyVpKvgDeWWGAgcIKeW1Yg7yxQi2kkLKxSvV2UR2T8533Lfh8fEx67aLBYehG9B9Rs1ZkX9Oq6m-0aRi0oNr2H2gF2cprkdF2h5rgYwxo9Vtw6y58aQZ6W5de6d-69LYuzZjOdeXg1S6I-T0bh0FH43A0-akBTdK9d38pvgE0LaG4</recordid><startdate>20140215</startdate><enddate>20140215</enddate><creator>Galazka, Zbigniew</creator><creator>Uecker, Reinhard</creator><creator>Fornari, Roberto</creator><general>Elsevier B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20140215</creationdate><title>A novel crystal growth technique from the melt: Levitation-Assisted Self-Seeding Crystal Growth Method</title><author>Galazka, Zbigniew ; Uecker, Reinhard ; Fornari, Roberto</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c477t-578a99278e3b0e9fd97c7984882b02af7c0109e3e24c15e25f79b87885f99dfb3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>A1. Growth from the melt</topic><topic>A2. Self created seed</topic><topic>A3. Electromagnetic levitation</topic><topic>B1. Bulk In2O3 single crystal</topic><topic>B2. Transparent semiconducting oxide</topic><topic>Crucibles</topic><topic>Crystal growth</topic><topic>Indium oxides</topic><topic>Liquids</topic><topic>Melts</topic><topic>Melts (crystal growth)</topic><topic>Necks</topic><topic>Single crystals</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Galazka, Zbigniew</creatorcontrib><creatorcontrib>Uecker, Reinhard</creatorcontrib><creatorcontrib>Fornari, Roberto</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of crystal growth</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Galazka, Zbigniew</au><au>Uecker, Reinhard</au><au>Fornari, Roberto</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A novel crystal growth technique from the melt: Levitation-Assisted Self-Seeding Crystal Growth Method</atitle><jtitle>Journal of crystal growth</jtitle><date>2014-02-15</date><risdate>2014</risdate><volume>388</volume><spage>61</spage><epage>69</epage><pages>61-69</pages><issn>0022-0248</issn><eissn>1873-5002</eissn><abstract>A novel melt crystal growth technique was developed and applied for growing bulk In2O3 single crystals. In this new method the In2O3 starting material inside an inductively heated metal crucible is subjected to a controlled decomposition in such a way that a certain amount of free metallic indium forms. As a result, the electromagnetic field from an RF coil couples also to the In2O3 starting material, in addition to the metal crucible, which facilitates the melting. Liquid In2O3 has good electrical conductivity so that eddy currents are induced in the melt close to the crucible wall. This in turn induces a counter magnetic field that ultimately leads to levitation of a portion of the molten In2O3. The amount of the levitated material depends on the mutual RF coil–crucible position, their configurations as well as other components of a growth furnace. A consequence of the partial levitation of In2O3 melt is the formation of a liquid neck between the levitated and the quiescent melt portions. This neck is crucial as it acts as a seed during the crystallization process. The neck can be further shaped by controlled overheating or soaking. By cooling down, two single crystals are formed on the opposite sides of the seed. We named this new crystal growth technique “Levitation-Assisted Self-Seeding Crystal Growth Method”. It is in principle applicable to any oxides whose melts are electrically conductive. Thanks to this method we have successfully grown truly bulk In2O3 single crystals from the melt for the first time worldwide.
•Description of a novel crystal growth method from the melt utilizing an electromagnetic levitation inside a metal crucible.•A portion of the melt is levitated and a liquid neck (seed) is formed between two liquid regions.•During the crystallization process two single crystals are formed on opposite sides of the self-created seed.•That crystal growth technique has been named “Levitation-Assisted Self-Seeding Crystal Growth Method”.•The method has been utilized for growing bulk In2O3 single crystals from the melt for the first time worldwide.</abstract><pub>Elsevier B.V</pub><doi>10.1016/j.jcrysgro.2013.11.049</doi><tpages>9</tpages></addata></record> |
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subjects | A1. Growth from the melt A2. Self created seed A3. Electromagnetic levitation B1. Bulk In2O3 single crystal B2. Transparent semiconducting oxide Crucibles Crystal growth Indium oxides Liquids Melts Melts (crystal growth) Necks Single crystals |
title | A novel crystal growth technique from the melt: Levitation-Assisted Self-Seeding Crystal Growth Method |
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