Mutual alloying of XAs (X=Ga, In, Al) materials: Tuning the optoelectronic and thermodynamic properties for solar energy applications

[Display omitted] •Mutual alloying of XAs (X=Ga, In, Al) materials is investigated with DFT.•XAs materials are suitable for optoelectronic and solar energy applications.•Energy gap of Ga1−xAlxAs and In1−xAlxAs was found to be increased with x.•Mutual alloying with different concentrations is useful...

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Veröffentlicht in:Solar energy 2014-02, Vol.100, p.1-8
Hauptverfasser: Haq, Bakhtiar Ul, Ahmed, R., El Haj Hassan, F., Khenata, R., Kasmin, Mohd Khalid, Goumri-Said, Souraya
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Sprache:eng
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