The Increase of Radiative Lifetime of Free Excitons in Selectively Si-doped GaAs/Al sub(x)Ga sub(1-x)As Heterostructures

The time resolved photoluminescence spectra of selectively Si-doped GaAs/Al sub(x)Ga sub(1-x)As heterostructures have been investigated over a wide temperature range from 3.6 K to 300 K in order to identify possible mechanisms behind the observed increase in radiative lifetime of free excitons. Poss...

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Veröffentlicht in:	Medžiagotyra 2014-01, Vol.20 (2), p.153-156
Hauptverfasser:	KUNDROTAS, Jurgis, CERSKUS, Aurimas, NARGELIENE, Viktorija, SUEIEDELIS, Algirdas, ASMONTAS, Steponas, GRADAUSKAS, Jonas, JOHANNESSEN, Erik, JOHANNESSEN, Agne
Format:	Artikel
Sprache:	eng
Schlagworte:	Carrier recombination Excitons Gallium arsenide Gallium arsenides Heterostructures Photoluminescence Radiative lifetime Spectral emissivity
Online-Zugang:	Volltext
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