pH Response of Silicon Nanowire Sensors: Impact of Nanowire Width and Gate Oxide
We present a systematic study of the performance of silicon nanowires (SiNWs) with different widths when they are used as ion-sensitive field-effect transistors (ISFETs) in pH-sensing experiments. The SiNW widths ranged from 100 nm to 1 mu m. The SiNW-ISFETs were successfully fabricated from silicon...
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| Veröffentlicht in: | Sensors and materials 2013-01, Vol.25 (8), p.567-576 |
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| container_title | Sensors and materials |
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| creator | Bedner, Kristine Guzenko, Vitaliy Anatolijovic Tarasov, Alexey Wipf, Mathias Stoop, Ralph Lukas Just, David Rigante, Sara Fu, Wangyang Minamisawa, Renato Amaral David, Christian Calame, Michel Gobrecht, Jens Schonenberger, Christian |
| description | We present a systematic study of the performance of silicon nanowires (SiNWs) with different widths when they are used as ion-sensitive field-effect transistors (ISFETs) in pH-sensing experiments. The SiNW widths ranged from 100 nm to 1 mu m. The SiNW-ISFETs were successfully fabricated from silicon-on-insulator (SOI) wafers with Al sub(2)O sub(3) or HfO sub(2) as gate dielectric. All the SiNWs showed a pH Response close to the Nernstian limit of 59.5 mV/pH at 300 K, independent of their width, or the investigated gate dielectric or operating mode. Even nanowires (NWs) in the 100 nm range operated reliably without degradation of their functionality. This result is of importance for a broad research field using SiNW sensors as a candidate for future applications. |
| doi_str_mv | 10.18494/sam.2013.890 |
| format | Article |
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| source | DOAJ Directory of Open Access Journals; EZB-FREE-00999 freely available EZB journals; Alma/SFX Local Collection |
| subjects | Dielectrics Gates Hafnium oxide Nanostructure Nanowires Oxides Sensors Silicon |
| title | pH Response of Silicon Nanowire Sensors: Impact of Nanowire Width and Gate Oxide |
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