Growth and analysis of modulation-doped AlGaN/GaN heterostructure on semi-insulating SiC substrate

AlGaN/GaN heterostructure was grown on semi-insulating 6H–SiC substrate. The effect of the thickness of the initial AlN buffer layer on the crystalline quality and the stress of the grown GaN layer were investigated. The semi-insulating characteristic of the undoped GaN layer, which is very importan...

Ausführliche Beschreibung