The Effect of O sub(3) Support for Fabrication of AlO sub(x) Thin Film by Mist CVD Technique

AlO sub(x) thin film is one of the most promising high dielectric constant (High-k) materials. AlO sub(x) thin films were grown by mist CVD using a solution-based fabrication technology operated even under atmospheric pressure. This method is highly suitable due to easy configuration, low cost and environmental friendly operations. This report demonstrates significant improvements in the quality of AlO sub(x) thin films by O sub(3) incorporation. AlO sub(x) thin films were grown above 400[degrees]C with breakdown field (E sub(BD)) over 6 MV/cm, static dielectric constant ([kappa] sub(0)) over 6, and dynamic dielectric constant ([kappa] sub([infinity])) around 3. On the other hand, O sub(3) assisted AlO sub(x) thin films were grown above 340[degrees]C with E sub(BD) over 8MV/cm, [kappa] sub(0) over 7, and [kappa] sub([infinity]) over 3. This work demonstrates that the quality of AlO sub(x) thin films could be significantly improved using O sub(3) incorporation. AlO sub(x) thin film properties and its degradations were controlled by the OH (-AlO sub(x)) residual bonding. High quality AlO sub(x) thin films were grown at the temperature range from 400[degrees]C to 340[degrees]C by controlling OH (-AlO sub(x)) bonding decomposition with O sub(3) incorporation.