Controllable crystallization of Ge2Sb2Te5 phase-change memory thin films driven by multiple femtosecond laser pulses

•Controllable crystallization of Ge2Sb2Te5 films by multiple fs laser pulses.•Real-time reflectivity measurement and two-temperature model calculation were used.•Different crystallization processes and mechanisms at low, medium, and high fluences. In this study, controllable crystallization processe...

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Veröffentlicht in:	Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 2015-03, Vol.193, p.189-197
Hauptverfasser:	Yang, Qiusong, Cai, Zhilong, Wang, Yang, Huang, Huan, Wu, Yiqun
Format:	Artikel
Sprache:	eng
Schlagworte:	Crystallization Crystallization dynamics Devices Femtosecond Femtosecond laser pulse Ge2Sb2Te5 thin film Lasers Phase change Phase change memory material Real time Reflectivity Stability Thin films
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