Controllable crystallization of Ge2Sb2Te5 phase-change memory thin films driven by multiple femtosecond laser pulses
•Controllable crystallization of Ge2Sb2Te5 films by multiple fs laser pulses.•Real-time reflectivity measurement and two-temperature model calculation were used.•Different crystallization processes and mechanisms at low, medium, and high fluences. In this study, controllable crystallization processe...
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| Veröffentlicht in: | Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 2015-03, Vol.193, p.189-197 |
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| container_title | Materials science & engineering. B, Solid-state materials for advanced technology |
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| creator | Yang, Qiusong Cai, Zhilong Wang, Yang Huang, Huan Wu, Yiqun |
| description | •Controllable crystallization of Ge2Sb2Te5 films by multiple fs laser pulses.•Real-time reflectivity measurement and two-temperature model calculation were used.•Different crystallization processes and mechanisms at low, medium, and high fluences.
In this study, controllable crystallization processes of as-deposited amorphous Ge2Sb2Te5 phase-change memory thin films driven by multiple femtosecond laser pulses were investigated in detail. The threshold effects of pulse fluence and the number of pulses were analyzed comprehensively using real-time reflectivity measurements and two-temperature model calculations. The different optical transients indicated three kinds of crystallization processes at low, medium, and high fluences. These results may provide further insights into the ultrafast phase-transition mechanics and are useful in the design of programmable multi-level logic devices based on phase change memory materials. |
| doi_str_mv | 10.1016/j.mseb.2014.12.017 |
| format | Article |
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In this study, controllable crystallization processes of as-deposited amorphous Ge2Sb2Te5 phase-change memory thin films driven by multiple femtosecond laser pulses were investigated in detail. The threshold effects of pulse fluence and the number of pulses were analyzed comprehensively using real-time reflectivity measurements and two-temperature model calculations. The different optical transients indicated three kinds of crystallization processes at low, medium, and high fluences. These results may provide further insights into the ultrafast phase-transition mechanics and are useful in the design of programmable multi-level logic devices based on phase change memory materials.</description><identifier>ISSN: 0921-5107</identifier><identifier>EISSN: 1873-4944</identifier><identifier>DOI: 10.1016/j.mseb.2014.12.017</identifier><language>eng</language><publisher>Elsevier B.V</publisher><subject>Crystallization ; Crystallization dynamics ; Devices ; Femtosecond ; Femtosecond laser pulse ; Ge2Sb2Te5 thin film ; Lasers ; Phase change ; Phase change memory material ; Real time ; Reflectivity ; Stability ; Thin films</subject><ispartof>Materials science & engineering. B, Solid-state materials for advanced technology, 2015-03, Vol.193, p.189-197</ispartof><rights>2014 Elsevier B.V.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c333t-55cc037901a18e69e2aa24a4f92cb6e092046cae98af708e8c3c72f01411e4cb3</citedby><cites>FETCH-LOGICAL-c333t-55cc037901a18e69e2aa24a4f92cb6e092046cae98af708e8c3c72f01411e4cb3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.mseb.2014.12.017$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3550,27924,27925,45995</link.rule.ids></links><search><creatorcontrib>Yang, Qiusong</creatorcontrib><creatorcontrib>Cai, Zhilong</creatorcontrib><creatorcontrib>Wang, Yang</creatorcontrib><creatorcontrib>Huang, Huan</creatorcontrib><creatorcontrib>Wu, Yiqun</creatorcontrib><title>Controllable crystallization of Ge2Sb2Te5 phase-change memory thin films driven by multiple femtosecond laser pulses</title><title>Materials science & engineering. B, Solid-state materials for advanced technology</title><description>•Controllable crystallization of Ge2Sb2Te5 films by multiple fs laser pulses.•Real-time reflectivity measurement and two-temperature model calculation were used.•Different crystallization processes and mechanisms at low, medium, and high fluences.
In this study, controllable crystallization processes of as-deposited amorphous Ge2Sb2Te5 phase-change memory thin films driven by multiple femtosecond laser pulses were investigated in detail. The threshold effects of pulse fluence and the number of pulses were analyzed comprehensively using real-time reflectivity measurements and two-temperature model calculations. The different optical transients indicated three kinds of crystallization processes at low, medium, and high fluences. These results may provide further insights into the ultrafast phase-transition mechanics and are useful in the design of programmable multi-level logic devices based on phase change memory materials.</description><subject>Crystallization</subject><subject>Crystallization dynamics</subject><subject>Devices</subject><subject>Femtosecond</subject><subject>Femtosecond laser pulse</subject><subject>Ge2Sb2Te5 thin film</subject><subject>Lasers</subject><subject>Phase change</subject><subject>Phase change memory material</subject><subject>Real time</subject><subject>Reflectivity</subject><subject>Stability</subject><subject>Thin films</subject><issn>0921-5107</issn><issn>1873-4944</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNp9kD1PwzAURS0EEqXwB5g8siT4OW4-JBZUQUGqxECZLcd9oa6cONgOUvn1uCoz03vDPVe6h5BbYDkwKO_3eR-wzTkDkQPPGVRnZAZ1VWSiEeKczFjDIVsAqy7JVQh7xhhwzmckLt0QvbNWtRap9ocQlbXmR0XjBuo6ukL-3vINLui4UwEzvVPDJ9Iee-cPNO7MQDtj-0C33nzjQNsD7ScbzZjqOuyjC6jdsKU2wZ6Okw0YrslFp9Jz83fn5OP5abN8ydZvq9fl4zrTRVHEbLHQmhVVw0BBjWWDXCkulOgartsS0yQmSq2wqVVXsRprXeiKd8kBAArdFnNyd-odvfuaMETZm6AxjR3QTUFCWVWNqAGKFOWnqPYuBI-dHL3plT9IYPKoWO7lUbE8KpbAZVKcoIcThGnEt0EvgzY4aNwajzrKrTP_4b9u4obH</recordid><startdate>20150301</startdate><enddate>20150301</enddate><creator>Yang, Qiusong</creator><creator>Cai, Zhilong</creator><creator>Wang, Yang</creator><creator>Huang, Huan</creator><creator>Wu, Yiqun</creator><general>Elsevier B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>H8D</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20150301</creationdate><title>Controllable crystallization of Ge2Sb2Te5 phase-change memory thin films driven by multiple femtosecond laser pulses</title><author>Yang, Qiusong ; Cai, Zhilong ; Wang, Yang ; Huang, Huan ; Wu, Yiqun</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c333t-55cc037901a18e69e2aa24a4f92cb6e092046cae98af708e8c3c72f01411e4cb3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Crystallization</topic><topic>Crystallization dynamics</topic><topic>Devices</topic><topic>Femtosecond</topic><topic>Femtosecond laser pulse</topic><topic>Ge2Sb2Te5 thin film</topic><topic>Lasers</topic><topic>Phase change</topic><topic>Phase change memory material</topic><topic>Real time</topic><topic>Reflectivity</topic><topic>Stability</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yang, Qiusong</creatorcontrib><creatorcontrib>Cai, Zhilong</creatorcontrib><creatorcontrib>Wang, Yang</creatorcontrib><creatorcontrib>Huang, Huan</creatorcontrib><creatorcontrib>Wu, Yiqun</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Materials science & engineering. B, Solid-state materials for advanced technology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yang, Qiusong</au><au>Cai, Zhilong</au><au>Wang, Yang</au><au>Huang, Huan</au><au>Wu, Yiqun</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Controllable crystallization of Ge2Sb2Te5 phase-change memory thin films driven by multiple femtosecond laser pulses</atitle><jtitle>Materials science & engineering. B, Solid-state materials for advanced technology</jtitle><date>2015-03-01</date><risdate>2015</risdate><volume>193</volume><spage>189</spage><epage>197</epage><pages>189-197</pages><issn>0921-5107</issn><eissn>1873-4944</eissn><abstract>•Controllable crystallization of Ge2Sb2Te5 films by multiple fs laser pulses.•Real-time reflectivity measurement and two-temperature model calculation were used.•Different crystallization processes and mechanisms at low, medium, and high fluences.
In this study, controllable crystallization processes of as-deposited amorphous Ge2Sb2Te5 phase-change memory thin films driven by multiple femtosecond laser pulses were investigated in detail. The threshold effects of pulse fluence and the number of pulses were analyzed comprehensively using real-time reflectivity measurements and two-temperature model calculations. The different optical transients indicated three kinds of crystallization processes at low, medium, and high fluences. These results may provide further insights into the ultrafast phase-transition mechanics and are useful in the design of programmable multi-level logic devices based on phase change memory materials.</abstract><pub>Elsevier B.V</pub><doi>10.1016/j.mseb.2014.12.017</doi><tpages>9</tpages></addata></record> |
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| ispartof | Materials science & engineering. B, Solid-state materials for advanced technology, 2015-03, Vol.193, p.189-197 |
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| language | eng |
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| source | Elsevier ScienceDirect Journals Complete |
| subjects | Crystallization Crystallization dynamics Devices Femtosecond Femtosecond laser pulse Ge2Sb2Te5 thin film Lasers Phase change Phase change memory material Real time Reflectivity Stability Thin films |
| title | Controllable crystallization of Ge2Sb2Te5 phase-change memory thin films driven by multiple femtosecond laser pulses |
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