High-Breakdown-Voltage and Low-Specific-on-Resistance GaN p--n Junction Diodes on Free-Standing GaN Substrates Fabricated Through Low-Damage Field-Plate Process

In this letter, we describe the characteristics of Gallium Nitride (GaN) p--n junction diodes fabricated on free-standing GaN substrates with low specific on-resistance $R_{\text{on}}$ and high breakdown voltage $V_{\text{B}}$. The breakdown voltage of the diodes with the field-plate (FP) structure...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2013-02, Vol.52 (2), p.028007-028007-3
Hauptverfasser:	Hatakeyama, Yoshitomo, Nomoto, Kazuki, Terano, Akihisa, Kaneda, Naoki, Tsuchiya, Tadayoshi, Mishima, Tomoyoshi, Nakamura, Tohru
Format:	Artikel
Sprache:	eng
Schlagworte:	Breakdown Diodes Electric potential Filled plastics Gallium nitrides Leakage current P-n junctions Voltage
Online-Zugang:	Volltext
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