Nitrogen doping of 4H–SiC by the top-seeded solution growth technique using Si–Ti solvent
The nitrogen doping behavior of 4H–SiC was investigated by the top-seeded solution growth technique using Si–Ti solvent. Growth experiments were performed under a mixed gas of helium and nitrogen at atmospheric pressure at 1940°C, in which nitrogen content ranged between 0.17 and 0.5vol%. The electr...
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| Veröffentlicht in: | Journal of crystal growth 2014-04, Vol.392, p.60-65 |
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| creator | Kusunoki, Kazuhiko Kamei, Kazuhito Seki, Kazuaki Harada, Shunta Ujihara, Toru |
| description | The nitrogen doping behavior of 4H–SiC was investigated by the top-seeded solution growth technique using Si–Ti solvent. Growth experiments were performed under a mixed gas of helium and nitrogen at atmospheric pressure at 1940°C, in which nitrogen content ranged between 0.17 and 0.5vol%. The electrical property and structural quality of nitrogen-doped crystals were examined. The nitrogen doping level increased with the increase of nitrogen content in the growth furnace. The most heavily nitrogen-doped SiC with a concentration of 1.1×1020cm−3 was obtained; however, stacking faults (SFs) were abruptly generated above a nitrogen concentration of 3.0×1019cm−3. The lowest resistivity of approximately 0.010Ωcm was obtained with SFs-free. Based on the both undoped and nitrogen-doped growth experimental results, the nitrogen incorporation behavior by employing our solution growth technique was discussed.
•Nitrogen doping behavior of 4H–SiC was investigated by the top-seeded solution growth technique.•Suppression of the background nitrogen level is achieved by the baking procedure.•Doping concentration could be controlled by changing the nitrogen partial pressure during growth.•Stacking faults were generated when the nitrogen concentration in SiC exceeded 3.0×1019cm−3.•The lowest resistivity of approximately 0.010Ωcm was obtained with excellent crystalline quality. |
| doi_str_mv | 10.1016/j.jcrysgro.2014.01.044 |
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•Nitrogen doping behavior of 4H–SiC was investigated by the top-seeded solution growth technique.•Suppression of the background nitrogen level is achieved by the baking procedure.•Doping concentration could be controlled by changing the nitrogen partial pressure during growth.•Stacking faults were generated when the nitrogen concentration in SiC exceeded 3.0×1019cm−3.•The lowest resistivity of approximately 0.010Ωcm was obtained with excellent crystalline quality.</description><identifier>ISSN: 0022-0248</identifier><identifier>EISSN: 1873-5002</identifier><identifier>DOI: 10.1016/j.jcrysgro.2014.01.044</identifier><identifier>CODEN: JCRGAE</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>A1. Doping ; A1. Solvents ; A2. Growth from solutions ; A2. Top seeded solution growth ; B1. Inorganic compounds ; B2. Semiconducting silicon compounds ; Condensed matter: structure, mechanical and thermal properties ; Cross-disciplinary physics: materials science; rheology ; Crystal growth ; Crystal structure ; Defects and impurities in crystals; microstructure ; Doping ; Electrical properties ; Electrical resistivity ; Exact sciences and technology ; Furnaces ; Growth from solutions ; Materials science ; Methods of crystal growth; physics of crystal growth ; Physics ; Silicon carbide ; Solvents ; Stacking faults and other planar or extended defects ; Structure of solids and liquids; crystallography ; Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation</subject><ispartof>Journal of crystal growth, 2014-04, Vol.392, p.60-65</ispartof><rights>2014 Elsevier B.V.</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c474t-4e0e4bcdc2bfe95409a77460e688d28befc550864488bbeab5d9f6ee527665f63</citedby><cites>FETCH-LOGICAL-c474t-4e0e4bcdc2bfe95409a77460e688d28befc550864488bbeab5d9f6ee527665f63</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.jcrysgro.2014.01.044$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3548,27922,27923,45993</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=28465163$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Kusunoki, Kazuhiko</creatorcontrib><creatorcontrib>Kamei, Kazuhito</creatorcontrib><creatorcontrib>Seki, Kazuaki</creatorcontrib><creatorcontrib>Harada, Shunta</creatorcontrib><creatorcontrib>Ujihara, Toru</creatorcontrib><title>Nitrogen doping of 4H–SiC by the top-seeded solution growth technique using Si–Ti solvent</title><title>Journal of crystal growth</title><description>The nitrogen doping behavior of 4H–SiC was investigated by the top-seeded solution growth technique using Si–Ti solvent. Growth experiments were performed under a mixed gas of helium and nitrogen at atmospheric pressure at 1940°C, in which nitrogen content ranged between 0.17 and 0.5vol%. The electrical property and structural quality of nitrogen-doped crystals were examined. The nitrogen doping level increased with the increase of nitrogen content in the growth furnace. The most heavily nitrogen-doped SiC with a concentration of 1.1×1020cm−3 was obtained; however, stacking faults (SFs) were abruptly generated above a nitrogen concentration of 3.0×1019cm−3. The lowest resistivity of approximately 0.010Ωcm was obtained with SFs-free. Based on the both undoped and nitrogen-doped growth experimental results, the nitrogen incorporation behavior by employing our solution growth technique was discussed.
•Nitrogen doping behavior of 4H–SiC was investigated by the top-seeded solution growth technique.•Suppression of the background nitrogen level is achieved by the baking procedure.•Doping concentration could be controlled by changing the nitrogen partial pressure during growth.•Stacking faults were generated when the nitrogen concentration in SiC exceeded 3.0×1019cm−3.•The lowest resistivity of approximately 0.010Ωcm was obtained with excellent crystalline quality.</description><subject>A1. Doping</subject><subject>A1. Solvents</subject><subject>A2. Growth from solutions</subject><subject>A2. Top seeded solution growth</subject><subject>B1. Inorganic compounds</subject><subject>B2. Semiconducting silicon compounds</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Crystal growth</subject><subject>Crystal structure</subject><subject>Defects and impurities in crystals; microstructure</subject><subject>Doping</subject><subject>Electrical properties</subject><subject>Electrical resistivity</subject><subject>Exact sciences and technology</subject><subject>Furnaces</subject><subject>Growth from solutions</subject><subject>Materials science</subject><subject>Methods of crystal growth; physics of crystal growth</subject><subject>Physics</subject><subject>Silicon carbide</subject><subject>Solvents</subject><subject>Stacking faults and other planar or extended defects</subject><subject>Structure of solids and liquids; crystallography</subject><subject>Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation</subject><issn>0022-0248</issn><issn>1873-5002</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNqFkMFO2zAchy0EEgX2CpMvk7gk-9u1Hee2qWJjEhoH4IisxPmndZXGne2Cets77A33JHNUxrUX-_J9_lkfIR8ZlAyY-rwu1zbs4zL4kgMTJbAShDghM6areSEB-CmZ5ZMXwIU-JxcxrgGyyWBGnn-6FPwSR9r5rRuX1PdU3P79_efBLWi7p2mFNPltERE77Gj0wy45P9K89ppWNKFdje7XDukuTvaDy-qjm7gXHNMVOeubIeKHt_uSPH27eVzcFnf3338svt4VVlQiFQIBRWs7y9seaymgbqpKKECldcd1i72VErQSQuu2xaaVXd0rRMkrpWSv5pfk-vDuNvj8mZjMxkWLw9CM6HfRMFVVteCa8-OolLWqpOTzjKoDaoOPMWBvtsFtmrA3DMyU3qzN__RmSm-AmZw-i5_eNppom6EPzWhdfLe5FkoyNQ18OXCY27w4DCZah6PFzgW0yXTeHZv6B-h4n5E</recordid><startdate>20140415</startdate><enddate>20140415</enddate><creator>Kusunoki, Kazuhiko</creator><creator>Kamei, Kazuhito</creator><creator>Seki, Kazuaki</creator><creator>Harada, Shunta</creator><creator>Ujihara, Toru</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20140415</creationdate><title>Nitrogen doping of 4H–SiC by the top-seeded solution growth technique using Si–Ti solvent</title><author>Kusunoki, Kazuhiko ; Kamei, Kazuhito ; Seki, Kazuaki ; Harada, Shunta ; Ujihara, Toru</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c474t-4e0e4bcdc2bfe95409a77460e688d28befc550864488bbeab5d9f6ee527665f63</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>A1. Doping</topic><topic>A1. Solvents</topic><topic>A2. Growth from solutions</topic><topic>A2. Top seeded solution growth</topic><topic>B1. Inorganic compounds</topic><topic>B2. Semiconducting silicon compounds</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Crystal growth</topic><topic>Crystal structure</topic><topic>Defects and impurities in crystals; microstructure</topic><topic>Doping</topic><topic>Electrical properties</topic><topic>Electrical resistivity</topic><topic>Exact sciences and technology</topic><topic>Furnaces</topic><topic>Growth from solutions</topic><topic>Materials science</topic><topic>Methods of crystal growth; physics of crystal growth</topic><topic>Physics</topic><topic>Silicon carbide</topic><topic>Solvents</topic><topic>Stacking faults and other planar or extended defects</topic><topic>Structure of solids and liquids; crystallography</topic><topic>Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kusunoki, Kazuhiko</creatorcontrib><creatorcontrib>Kamei, Kazuhito</creatorcontrib><creatorcontrib>Seki, Kazuaki</creatorcontrib><creatorcontrib>Harada, Shunta</creatorcontrib><creatorcontrib>Ujihara, Toru</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of crystal growth</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kusunoki, Kazuhiko</au><au>Kamei, Kazuhito</au><au>Seki, Kazuaki</au><au>Harada, Shunta</au><au>Ujihara, Toru</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Nitrogen doping of 4H–SiC by the top-seeded solution growth technique using Si–Ti solvent</atitle><jtitle>Journal of crystal growth</jtitle><date>2014-04-15</date><risdate>2014</risdate><volume>392</volume><spage>60</spage><epage>65</epage><pages>60-65</pages><issn>0022-0248</issn><eissn>1873-5002</eissn><coden>JCRGAE</coden><abstract>The nitrogen doping behavior of 4H–SiC was investigated by the top-seeded solution growth technique using Si–Ti solvent. Growth experiments were performed under a mixed gas of helium and nitrogen at atmospheric pressure at 1940°C, in which nitrogen content ranged between 0.17 and 0.5vol%. The electrical property and structural quality of nitrogen-doped crystals were examined. The nitrogen doping level increased with the increase of nitrogen content in the growth furnace. The most heavily nitrogen-doped SiC with a concentration of 1.1×1020cm−3 was obtained; however, stacking faults (SFs) were abruptly generated above a nitrogen concentration of 3.0×1019cm−3. The lowest resistivity of approximately 0.010Ωcm was obtained with SFs-free. Based on the both undoped and nitrogen-doped growth experimental results, the nitrogen incorporation behavior by employing our solution growth technique was discussed.
•Nitrogen doping behavior of 4H–SiC was investigated by the top-seeded solution growth technique.•Suppression of the background nitrogen level is achieved by the baking procedure.•Doping concentration could be controlled by changing the nitrogen partial pressure during growth.•Stacking faults were generated when the nitrogen concentration in SiC exceeded 3.0×1019cm−3.•The lowest resistivity of approximately 0.010Ωcm was obtained with excellent crystalline quality.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jcrysgro.2014.01.044</doi><tpages>6</tpages></addata></record> |
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| subjects | A1. Doping A1. Solvents A2. Growth from solutions A2. Top seeded solution growth B1. Inorganic compounds B2. Semiconducting silicon compounds Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Crystal growth Crystal structure Defects and impurities in crystals microstructure Doping Electrical properties Electrical resistivity Exact sciences and technology Furnaces Growth from solutions Materials science Methods of crystal growth physics of crystal growth Physics Silicon carbide Solvents Stacking faults and other planar or extended defects Structure of solids and liquids crystallography Theory and models of crystal growth physics of crystal growth, crystal morphology and orientation |
| title | Nitrogen doping of 4H–SiC by the top-seeded solution growth technique using Si–Ti solvent |
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