Top-seeded solution growth of three-inch-diameter 4H-SiC using convection control technique
The top-seeded solution growth of 4H-SiC at three inches in diameter has been investigated using Si–Ti alloy as a solvent. A perforated graphite disk called “immersion guide” (IG) was positioned in the solution in order to control solution flow. The morphological instability was improved and growth...
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| Veröffentlicht in: | Journal of crystal growth 2014-06, Vol.395, p.68-73 |
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| container_title | Journal of crystal growth |
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| creator | Kusunoki, Kazuhiko Okada, Nobuhiro Kamei, Kazuhito Moriguchi, Koji Daikoku, Hironori Kado, Motohisa Sakamoto, Hidemitsu Bessho, Takeshi Ujihara, Toru |
| description | The top-seeded solution growth of 4H-SiC at three inches in diameter has been investigated using Si–Ti alloy as a solvent. A perforated graphite disk called “immersion guide” (IG) was positioned in the solution in order to control solution flow. The morphological instability was improved and growth rate was significantly increased using the IG compared with conventional growth without the IG. Numerical fluid flow analysis with coupled heat and mass transportation was performed as well to understand convection and growth behavior. The origins of these improvements in the growth performance are discussed based on the numerical results. By controlling solution flow, we could successfully grow a three-inch-diameter 4H-SiC with 4-mm thickness.
•TSSG of 4H-SiC at 3in. in diameter has been investigated using Si–Ti solvent.•A perforated graphite disk was positioned in the solution to control solution flow.•The morphological instability was improved and growth rate was remarkably increased.•Numerical analysis was performed to clarify the phenomena that occurred in the liquid.•3-in.-diameter 4H-SiC with 4-mm thickness was grown by controlling solution flow. |
| doi_str_mv | 10.1016/j.jcrysgro.2014.03.006 |
| format | Article |
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•TSSG of 4H-SiC at 3in. in diameter has been investigated using Si–Ti solvent.•A perforated graphite disk was positioned in the solution to control solution flow.•The morphological instability was improved and growth rate was remarkably increased.•Numerical analysis was performed to clarify the phenomena that occurred in the liquid.•3-in.-diameter 4H-SiC with 4-mm thickness was grown by controlling solution flow.</description><identifier>ISSN: 0022-0248</identifier><identifier>EISSN: 1873-5002</identifier><identifier>DOI: 10.1016/j.jcrysgro.2014.03.006</identifier><identifier>CODEN: JCRGAE</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>A1. Computer simulation ; A1. Fluid flows ; A1. Morphological stability ; A2. Growth from high temperature solutions ; A2. Top-seeded solution growth ; B2. Semiconducting silicon compounds ; Computational fluid dynamics ; Convection ; Cross-disciplinary physics: materials science; rheology ; Crystal growth ; Exact sciences and technology ; Fluid flow ; Graphite ; Growth from solutions ; Materials science ; Mathematical models ; Methods of crystal growth; physics of crystal growth ; Physics ; Solvents ; Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation ; Transportation</subject><ispartof>Journal of crystal growth, 2014-06, Vol.395, p.68-73</ispartof><rights>2014 Elsevier B.V.</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c474t-3a62171fce3fe899ce7004a10d005b8046b35b08536e65c7697e6c5e35867a703</citedby><cites>FETCH-LOGICAL-c474t-3a62171fce3fe899ce7004a10d005b8046b35b08536e65c7697e6c5e35867a703</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.jcrysgro.2014.03.006$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,778,782,3539,27907,27908,45978</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=28472338$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Kusunoki, Kazuhiko</creatorcontrib><creatorcontrib>Okada, Nobuhiro</creatorcontrib><creatorcontrib>Kamei, Kazuhito</creatorcontrib><creatorcontrib>Moriguchi, Koji</creatorcontrib><creatorcontrib>Daikoku, Hironori</creatorcontrib><creatorcontrib>Kado, Motohisa</creatorcontrib><creatorcontrib>Sakamoto, Hidemitsu</creatorcontrib><creatorcontrib>Bessho, Takeshi</creatorcontrib><creatorcontrib>Ujihara, Toru</creatorcontrib><title>Top-seeded solution growth of three-inch-diameter 4H-SiC using convection control technique</title><title>Journal of crystal growth</title><description>The top-seeded solution growth of 4H-SiC at three inches in diameter has been investigated using Si–Ti alloy as a solvent. A perforated graphite disk called “immersion guide” (IG) was positioned in the solution in order to control solution flow. The morphological instability was improved and growth rate was significantly increased using the IG compared with conventional growth without the IG. Numerical fluid flow analysis with coupled heat and mass transportation was performed as well to understand convection and growth behavior. The origins of these improvements in the growth performance are discussed based on the numerical results. By controlling solution flow, we could successfully grow a three-inch-diameter 4H-SiC with 4-mm thickness.
•TSSG of 4H-SiC at 3in. in diameter has been investigated using Si–Ti solvent.•A perforated graphite disk was positioned in the solution to control solution flow.•The morphological instability was improved and growth rate was remarkably increased.•Numerical analysis was performed to clarify the phenomena that occurred in the liquid.•3-in.-diameter 4H-SiC with 4-mm thickness was grown by controlling solution flow.</description><subject>A1. Computer simulation</subject><subject>A1. Fluid flows</subject><subject>A1. Morphological stability</subject><subject>A2. Growth from high temperature solutions</subject><subject>A2. Top-seeded solution growth</subject><subject>B2. Semiconducting silicon compounds</subject><subject>Computational fluid dynamics</subject><subject>Convection</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Crystal growth</subject><subject>Exact sciences and technology</subject><subject>Fluid flow</subject><subject>Graphite</subject><subject>Growth from solutions</subject><subject>Materials science</subject><subject>Mathematical models</subject><subject>Methods of crystal growth; physics of crystal growth</subject><subject>Physics</subject><subject>Solvents</subject><subject>Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation</subject><subject>Transportation</subject><issn>0022-0248</issn><issn>1873-5002</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNqFkDtPwzAQxy0EEuXxFVAWJBaHc_xKN1AFFAmJAZgYLNe5tK7SuNgpiG-PS4GV5e6G_-P0I-SMQcmAqctluXTxM81jKCtgogReAqg9MmK15lQCVPtklGdFoRL1ITlKaQmQnQxG5PU5rGlCbLApUug2gw99kaM-hkUR2mJYRETqe7egjbcrHDAWYkqf_KTYJN_PCxf6d3TfrnwOMXTFgG7R-7cNnpCD1nYJT3_2MXm5vXmeTOnD49395PqBOqHFQLlVFdOsdchbrMdjhxpAWAYNgJzVINSMyxnUkitU0mk11qicRC5rpa0GfkwudrnrGHJtGszKJ4ddZ3sMm2SY0nosQIn6f6lUGpSUXGSp2kldDClFbM06-pWNn4aB2YI3S_ML3mzBG-Amg8_G858Om5zt2mh759Ofu6qFrjjf_nK102Fm8-4xmuQ89g4bHzNS0wT_X9UX9TecFg</recordid><startdate>20140601</startdate><enddate>20140601</enddate><creator>Kusunoki, Kazuhiko</creator><creator>Okada, Nobuhiro</creator><creator>Kamei, Kazuhito</creator><creator>Moriguchi, Koji</creator><creator>Daikoku, Hironori</creator><creator>Kado, Motohisa</creator><creator>Sakamoto, Hidemitsu</creator><creator>Bessho, Takeshi</creator><creator>Ujihara, Toru</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20140601</creationdate><title>Top-seeded solution growth of three-inch-diameter 4H-SiC using convection control technique</title><author>Kusunoki, Kazuhiko ; Okada, Nobuhiro ; Kamei, Kazuhito ; Moriguchi, Koji ; Daikoku, Hironori ; Kado, Motohisa ; Sakamoto, Hidemitsu ; Bessho, Takeshi ; Ujihara, Toru</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c474t-3a62171fce3fe899ce7004a10d005b8046b35b08536e65c7697e6c5e35867a703</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>A1. Computer simulation</topic><topic>A1. Fluid flows</topic><topic>A1. Morphological stability</topic><topic>A2. Growth from high temperature solutions</topic><topic>A2. Top-seeded solution growth</topic><topic>B2. Semiconducting silicon compounds</topic><topic>Computational fluid dynamics</topic><topic>Convection</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Crystal growth</topic><topic>Exact sciences and technology</topic><topic>Fluid flow</topic><topic>Graphite</topic><topic>Growth from solutions</topic><topic>Materials science</topic><topic>Mathematical models</topic><topic>Methods of crystal growth; physics of crystal growth</topic><topic>Physics</topic><topic>Solvents</topic><topic>Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation</topic><topic>Transportation</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kusunoki, Kazuhiko</creatorcontrib><creatorcontrib>Okada, Nobuhiro</creatorcontrib><creatorcontrib>Kamei, Kazuhito</creatorcontrib><creatorcontrib>Moriguchi, Koji</creatorcontrib><creatorcontrib>Daikoku, Hironori</creatorcontrib><creatorcontrib>Kado, Motohisa</creatorcontrib><creatorcontrib>Sakamoto, Hidemitsu</creatorcontrib><creatorcontrib>Bessho, Takeshi</creatorcontrib><creatorcontrib>Ujihara, Toru</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of crystal growth</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kusunoki, Kazuhiko</au><au>Okada, Nobuhiro</au><au>Kamei, Kazuhito</au><au>Moriguchi, Koji</au><au>Daikoku, Hironori</au><au>Kado, Motohisa</au><au>Sakamoto, Hidemitsu</au><au>Bessho, Takeshi</au><au>Ujihara, Toru</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Top-seeded solution growth of three-inch-diameter 4H-SiC using convection control technique</atitle><jtitle>Journal of crystal growth</jtitle><date>2014-06-01</date><risdate>2014</risdate><volume>395</volume><spage>68</spage><epage>73</epage><pages>68-73</pages><issn>0022-0248</issn><eissn>1873-5002</eissn><coden>JCRGAE</coden><abstract>The top-seeded solution growth of 4H-SiC at three inches in diameter has been investigated using Si–Ti alloy as a solvent. A perforated graphite disk called “immersion guide” (IG) was positioned in the solution in order to control solution flow. The morphological instability was improved and growth rate was significantly increased using the IG compared with conventional growth without the IG. Numerical fluid flow analysis with coupled heat and mass transportation was performed as well to understand convection and growth behavior. The origins of these improvements in the growth performance are discussed based on the numerical results. By controlling solution flow, we could successfully grow a three-inch-diameter 4H-SiC with 4-mm thickness.
•TSSG of 4H-SiC at 3in. in diameter has been investigated using Si–Ti solvent.•A perforated graphite disk was positioned in the solution to control solution flow.•The morphological instability was improved and growth rate was remarkably increased.•Numerical analysis was performed to clarify the phenomena that occurred in the liquid.•3-in.-diameter 4H-SiC with 4-mm thickness was grown by controlling solution flow.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jcrysgro.2014.03.006</doi><tpages>6</tpages></addata></record> |
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| subjects | A1. Computer simulation A1. Fluid flows A1. Morphological stability A2. Growth from high temperature solutions A2. Top-seeded solution growth B2. Semiconducting silicon compounds Computational fluid dynamics Convection Cross-disciplinary physics: materials science rheology Crystal growth Exact sciences and technology Fluid flow Graphite Growth from solutions Materials science Mathematical models Methods of crystal growth physics of crystal growth Physics Solvents Theory and models of crystal growth physics of crystal growth, crystal morphology and orientation Transportation |
| title | Top-seeded solution growth of three-inch-diameter 4H-SiC using convection control technique |
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