Long Photoconductivity Decay Characteristics in p-Type 4H-SiC Bulk Crystals

We investigated the photoconductivity decay characteristics of p-type 4H-SiC bulk crystals by differential microwave photoconductance decay (μ-PCD) measurements using a 349-nm laser as an excitation source. The decay time at room temperature was 2600 μs, which is much longer than that of n-type 4H-S...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2013-01, Vol.52 (1), p.010202-010202-3
Hauptverfasser:	Okuda, Takafumi, Miyake, Hiroki, Kimoto, Tsunenobu, Suda, Jun
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Sprache:	eng
Schlagworte:	Activation energy Crystals Decay Excitation Lasers Microwaves Photoconductivity
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description	We investigated the photoconductivity decay characteristics of p-type 4H-SiC bulk crystals by differential microwave photoconductance decay (μ-PCD) measurements using a 349-nm laser as an excitation source. The decay time at room temperature was 2600 μs, which is much longer than that of n-type 4H-SiC bulk crystals (40 ns). Decay time decreased with increasing temperature, resulting in 120 μs at 250 °C, and the activation energy of decay time was determined to be $140\pm 10$ meV. Long decay characteristics were also observed by below-band-gap excitation at 523 nm.
doi_str_mv	10.7567/JJAP.52.010202
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The decay time at room temperature was 2600 μs, which is much longer than that of n-type 4H-SiC bulk crystals (40 ns). Decay time decreased with increasing temperature, resulting in 120 μs at 250 °C, and the activation energy of decay time was determined to be $140\pm 10$ meV. 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The decay time at room temperature was 2600 μs, which is much longer than that of n-type 4H-SiC bulk crystals (40 ns). Decay time decreased with increasing temperature, resulting in 120 μs at 250 °C, and the activation energy of decay time was determined to be $140\pm 10$ meV. 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The decay time at room temperature was 2600 μs, which is much longer than that of n-type 4H-SiC bulk crystals (40 ns). Decay time decreased with increasing temperature, resulting in 120 μs at 250 °C, and the activation energy of decay time was determined to be $140\pm 10$ meV. Long decay characteristics were also observed by below-band-gap excitation at 523 nm.</abstract><pub>The Japan Society of Applied Physics</pub><doi>10.7567/JJAP.52.010202</doi></addata></record>
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subjects	Activation energy Crystals Decay Excitation Lasers Microwaves Photoconductivity
title	Long Photoconductivity Decay Characteristics in p-Type 4H-SiC Bulk Crystals
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