Effect of dopants and thermal treatment on properties of Ga-Al-ZnO thin films fabricated by hetero targets sputtering system

In this study, we fabricated Ga and Al doped ZnO (Ga-Al-ZnO; GAZO) thin films by using the facing targets sputtering system under various conditions such as input current and thermal treatment temperature. The properties of the as-deposited GAZO thin films were examined by four-point, UV/Vis spectro...

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Veröffentlicht in:	Thin solid films 2013-03, Vol.531, p.238-242
Hauptverfasser:	Hong, JeongSoo, Matsushita, Nobuhiro, Kim, KyungHwan
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum-doped zinc oxide Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Crystallinity Deposition by sputtering Diffraction Dopants Electrical resistivity Exact sciences and technology Facing target sputtering Gallium-doped zinc oxide Materials science Methods of deposition of films and coatings film growth and epitaxy Methods of nanofabrication Optical properties Physical properties of thin films, nonelectronic Physics Spectrometry Sputtering Structure and morphology thickness Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thermal stability thermal effects Thermal treatment Thin film structure and morphology Thin films Transmittance X-ray diffraction
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