Abrasive and additive interactions in high selectivity STI CMP slurries
•Silicon dioxide to silicon nitride removal rate selectivity evaluated.•Ceria purity and crystal structure influence selectivity.•l-glutamic acid yields high selectivity with all ceria and is robust.•l-proline yields high selectivity only with one ceria and is less robust. Ceria based slurries with...
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Veröffentlicht in: | Microelectronic engineering 2014-02, Vol.114, p.98-104 |
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creator | Praveen, B.V.S. Manivannan, R. Umashankar, T.D. Cho, Byoung-Jun Park, Jin-Goo Ramanathan, S. |
description | •Silicon dioxide to silicon nitride removal rate selectivity evaluated.•Ceria purity and crystal structure influence selectivity.•l-glutamic acid yields high selectivity with all ceria and is robust.•l-proline yields high selectivity only with one ceria and is less robust.
Ceria based slurries with additives are widely used in shallow trench isolation (STI) chemical mechanical planarization (CMP) process to obtain high selective removal of silicon dioxide over silicon nitride. In this study ceria from different sources were used as abrasives and l-proline and l-glutamic acid were used as additives, with a focus on identifying the interactions between abrasives and additives and their effect of selectivity. Ceria particles were characterized using X-ray diffraction (XRD), energy dispersive X-ray (EDX) spectroscopy, transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) while the additive abrasive interactions were evaluated by UV–Visible spectroscopy and inductively coupled plasma optical emission spectroscopy (ICP-OES) analysis. While slurries with l-proline yielded high selectivity only with certain type of ceria, slurries with l-glutamic acid were found to be less sensitive to the ceria source than those with l-proline, and yielded high selectivity regardless of the source of ceria used. The purity of the abrasive and its crystal structure appear to play a significant role in determining the selectivity. |
doi_str_mv | 10.1016/j.mee.2013.10.004 |
format | Article |
fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1677918055</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0167931713006266</els_id><sourcerecordid>1541428345</sourcerecordid><originalsourceid>FETCH-LOGICAL-c426t-60a63c95fb96161ab1f034271f9919c7d56535c866a5920dc8174b1d10e3ab773</originalsourceid><addsrcrecordid>eNqNkU9r20AQxZeSQp20H6A3XQK5SN3R_icnYxI3kJBC3fOyWo2aNbLk7sqGfPuusOmxyWl4w29mmPcI-Qq0Agry27baIVY1BZZ1RSn_QBagFSuFkPqCLDKjSsNAfSKXKW1p1pzqBVkvm-hSOGLhhrZwbRumWYRhwuj8FMYhZVG8hN8vRcIec-sYptfi5-ahWD39KFJ_iDFg-kw-dq5P-OVcr8iv-7vN6nv5-Lx-WC0fS89rOZWSOsm8EV1jJEhwDXSU8VpBZwwYr1ohBRNeS-mEqWnrNSjeQAsUmWuUYlfk5rR3H8c_B0yT3YXkse_dgOMh2fymMqCpEG-jggOvNePvQRk1Rgs9o3BCfRxTitjZfQw7F18tUDtHYbc2R2HnKOZWjiLPXJ_Xu-Rd30U3-JD-DdaaclrXJnO3Jw6zg8eA0SYfcPDYhpidt-0Y_nPlL6d6m1g</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1530998585</pqid></control><display><type>article</type><title>Abrasive and additive interactions in high selectivity STI CMP slurries</title><source>Elsevier ScienceDirect Journals</source><creator>Praveen, B.V.S. ; Manivannan, R. ; Umashankar, T.D. ; Cho, Byoung-Jun ; Park, Jin-Goo ; Ramanathan, S.</creator><creatorcontrib>Praveen, B.V.S. ; Manivannan, R. ; Umashankar, T.D. ; Cho, Byoung-Jun ; Park, Jin-Goo ; Ramanathan, S.</creatorcontrib><description>•Silicon dioxide to silicon nitride removal rate selectivity evaluated.•Ceria purity and crystal structure influence selectivity.•l-glutamic acid yields high selectivity with all ceria and is robust.•l-proline yields high selectivity only with one ceria and is less robust.
Ceria based slurries with additives are widely used in shallow trench isolation (STI) chemical mechanical planarization (CMP) process to obtain high selective removal of silicon dioxide over silicon nitride. In this study ceria from different sources were used as abrasives and l-proline and l-glutamic acid were used as additives, with a focus on identifying the interactions between abrasives and additives and their effect of selectivity. Ceria particles were characterized using X-ray diffraction (XRD), energy dispersive X-ray (EDX) spectroscopy, transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) while the additive abrasive interactions were evaluated by UV–Visible spectroscopy and inductively coupled plasma optical emission spectroscopy (ICP-OES) analysis. While slurries with l-proline yielded high selectivity only with certain type of ceria, slurries with l-glutamic acid were found to be less sensitive to the ceria source than those with l-proline, and yielded high selectivity regardless of the source of ceria used. The purity of the abrasive and its crystal structure appear to play a significant role in determining the selectivity.</description><identifier>ISSN: 0167-9317</identifier><identifier>EISSN: 1873-5568</identifier><identifier>DOI: 10.1016/j.mee.2013.10.004</identifier><identifier>CODEN: MIENEF</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Abrasives ; Additives ; Amino acids ; Applied sciences ; Ceria ; Cerium oxide ; Chemical-mechanical polishing ; CMP ; Condensed matter: structure, mechanical and thermal properties ; Electronics ; Exact sciences and technology ; High selectivity ; Microelectronic fabrication (materials and surfaces technology) ; Nanoscale materials: clusters, nanoparticles, nanotubes, and nanocrystals ; Physics ; Physics of gases, plasmas and electric discharges ; Physics of plasmas and electric discharges ; Selectivity ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Shallow trench isolation ; Slurries ; Spectroscopy ; Structure of solids and liquids; crystallography ; Structure of specific crystalline solids ; X-rays</subject><ispartof>Microelectronic engineering, 2014-02, Vol.114, p.98-104</ispartof><rights>2013 Elsevier B.V.</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c426t-60a63c95fb96161ab1f034271f9919c7d56535c866a5920dc8174b1d10e3ab773</citedby><cites>FETCH-LOGICAL-c426t-60a63c95fb96161ab1f034271f9919c7d56535c866a5920dc8174b1d10e3ab773</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0167931713006266$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,776,780,3536,27903,27904,65309</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=28040229$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Praveen, B.V.S.</creatorcontrib><creatorcontrib>Manivannan, R.</creatorcontrib><creatorcontrib>Umashankar, T.D.</creatorcontrib><creatorcontrib>Cho, Byoung-Jun</creatorcontrib><creatorcontrib>Park, Jin-Goo</creatorcontrib><creatorcontrib>Ramanathan, S.</creatorcontrib><title>Abrasive and additive interactions in high selectivity STI CMP slurries</title><title>Microelectronic engineering</title><description>•Silicon dioxide to silicon nitride removal rate selectivity evaluated.•Ceria purity and crystal structure influence selectivity.•l-glutamic acid yields high selectivity with all ceria and is robust.•l-proline yields high selectivity only with one ceria and is less robust.
Ceria based slurries with additives are widely used in shallow trench isolation (STI) chemical mechanical planarization (CMP) process to obtain high selective removal of silicon dioxide over silicon nitride. In this study ceria from different sources were used as abrasives and l-proline and l-glutamic acid were used as additives, with a focus on identifying the interactions between abrasives and additives and their effect of selectivity. Ceria particles were characterized using X-ray diffraction (XRD), energy dispersive X-ray (EDX) spectroscopy, transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) while the additive abrasive interactions were evaluated by UV–Visible spectroscopy and inductively coupled plasma optical emission spectroscopy (ICP-OES) analysis. While slurries with l-proline yielded high selectivity only with certain type of ceria, slurries with l-glutamic acid were found to be less sensitive to the ceria source than those with l-proline, and yielded high selectivity regardless of the source of ceria used. The purity of the abrasive and its crystal structure appear to play a significant role in determining the selectivity.</description><subject>Abrasives</subject><subject>Additives</subject><subject>Amino acids</subject><subject>Applied sciences</subject><subject>Ceria</subject><subject>Cerium oxide</subject><subject>Chemical-mechanical polishing</subject><subject>CMP</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>High selectivity</subject><subject>Microelectronic fabrication (materials and surfaces technology)</subject><subject>Nanoscale materials: clusters, nanoparticles, nanotubes, and nanocrystals</subject><subject>Physics</subject><subject>Physics of gases, plasmas and electric discharges</subject><subject>Physics of plasmas and electric discharges</subject><subject>Selectivity</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Shallow trench isolation</subject><subject>Slurries</subject><subject>Spectroscopy</subject><subject>Structure of solids and liquids; crystallography</subject><subject>Structure of specific crystalline solids</subject><subject>X-rays</subject><issn>0167-9317</issn><issn>1873-5568</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNqNkU9r20AQxZeSQp20H6A3XQK5SN3R_icnYxI3kJBC3fOyWo2aNbLk7sqGfPuusOmxyWl4w29mmPcI-Qq0Agry27baIVY1BZZ1RSn_QBagFSuFkPqCLDKjSsNAfSKXKW1p1pzqBVkvm-hSOGLhhrZwbRumWYRhwuj8FMYhZVG8hN8vRcIec-sYptfi5-ahWD39KFJ_iDFg-kw-dq5P-OVcr8iv-7vN6nv5-Lx-WC0fS89rOZWSOsm8EV1jJEhwDXSU8VpBZwwYr1ohBRNeS-mEqWnrNSjeQAsUmWuUYlfk5rR3H8c_B0yT3YXkse_dgOMh2fymMqCpEG-jggOvNePvQRk1Rgs9o3BCfRxTitjZfQw7F18tUDtHYbc2R2HnKOZWjiLPXJ_Xu-Rd30U3-JD-DdaaclrXJnO3Jw6zg8eA0SYfcPDYhpidt-0Y_nPlL6d6m1g</recordid><startdate>20140201</startdate><enddate>20140201</enddate><creator>Praveen, B.V.S.</creator><creator>Manivannan, R.</creator><creator>Umashankar, T.D.</creator><creator>Cho, Byoung-Jun</creator><creator>Park, Jin-Goo</creator><creator>Ramanathan, S.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20140201</creationdate><title>Abrasive and additive interactions in high selectivity STI CMP slurries</title><author>Praveen, B.V.S. ; Manivannan, R. ; Umashankar, T.D. ; Cho, Byoung-Jun ; Park, Jin-Goo ; Ramanathan, S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c426t-60a63c95fb96161ab1f034271f9919c7d56535c866a5920dc8174b1d10e3ab773</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Abrasives</topic><topic>Additives</topic><topic>Amino acids</topic><topic>Applied sciences</topic><topic>Ceria</topic><topic>Cerium oxide</topic><topic>Chemical-mechanical polishing</topic><topic>CMP</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>High selectivity</topic><topic>Microelectronic fabrication (materials and surfaces technology)</topic><topic>Nanoscale materials: clusters, nanoparticles, nanotubes, and nanocrystals</topic><topic>Physics</topic><topic>Physics of gases, plasmas and electric discharges</topic><topic>Physics of plasmas and electric discharges</topic><topic>Selectivity</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Shallow trench isolation</topic><topic>Slurries</topic><topic>Spectroscopy</topic><topic>Structure of solids and liquids; crystallography</topic><topic>Structure of specific crystalline solids</topic><topic>X-rays</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Praveen, B.V.S.</creatorcontrib><creatorcontrib>Manivannan, R.</creatorcontrib><creatorcontrib>Umashankar, T.D.</creatorcontrib><creatorcontrib>Cho, Byoung-Jun</creatorcontrib><creatorcontrib>Park, Jin-Goo</creatorcontrib><creatorcontrib>Ramanathan, S.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Microelectronic engineering</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Praveen, B.V.S.</au><au>Manivannan, R.</au><au>Umashankar, T.D.</au><au>Cho, Byoung-Jun</au><au>Park, Jin-Goo</au><au>Ramanathan, S.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Abrasive and additive interactions in high selectivity STI CMP slurries</atitle><jtitle>Microelectronic engineering</jtitle><date>2014-02-01</date><risdate>2014</risdate><volume>114</volume><spage>98</spage><epage>104</epage><pages>98-104</pages><issn>0167-9317</issn><eissn>1873-5568</eissn><coden>MIENEF</coden><abstract>•Silicon dioxide to silicon nitride removal rate selectivity evaluated.•Ceria purity and crystal structure influence selectivity.•l-glutamic acid yields high selectivity with all ceria and is robust.•l-proline yields high selectivity only with one ceria and is less robust.
Ceria based slurries with additives are widely used in shallow trench isolation (STI) chemical mechanical planarization (CMP) process to obtain high selective removal of silicon dioxide over silicon nitride. In this study ceria from different sources were used as abrasives and l-proline and l-glutamic acid were used as additives, with a focus on identifying the interactions between abrasives and additives and their effect of selectivity. Ceria particles were characterized using X-ray diffraction (XRD), energy dispersive X-ray (EDX) spectroscopy, transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) while the additive abrasive interactions were evaluated by UV–Visible spectroscopy and inductively coupled plasma optical emission spectroscopy (ICP-OES) analysis. While slurries with l-proline yielded high selectivity only with certain type of ceria, slurries with l-glutamic acid were found to be less sensitive to the ceria source than those with l-proline, and yielded high selectivity regardless of the source of ceria used. The purity of the abrasive and its crystal structure appear to play a significant role in determining the selectivity.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.mee.2013.10.004</doi><tpages>7</tpages></addata></record> |
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subjects | Abrasives Additives Amino acids Applied sciences Ceria Cerium oxide Chemical-mechanical polishing CMP Condensed matter: structure, mechanical and thermal properties Electronics Exact sciences and technology High selectivity Microelectronic fabrication (materials and surfaces technology) Nanoscale materials: clusters, nanoparticles, nanotubes, and nanocrystals Physics Physics of gases, plasmas and electric discharges Physics of plasmas and electric discharges Selectivity Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Shallow trench isolation Slurries Spectroscopy Structure of solids and liquids crystallography Structure of specific crystalline solids X-rays |
title | Abrasive and additive interactions in high selectivity STI CMP slurries |
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