Enhanced and Retarded SiO sub(2) Growth on Thermally Oxidized Fe-Contaminated n-Type Si(001) Surfaces

At the beginning of the oxidation of Fe-contaminated n-type Si(001) surfaces, Fe reacted with oxygen (O sub(2)) on the silicon (Si) substrate to form Fe sub(2)O sub(3) and oxygen-induced point defects (emitted Si + vacancies). SiO sub(2) growth was mainly enhanced by catalytic action of Fe. At 650 [...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2013-04, Vol.52 (4R), p.041302-041302
Hauptverfasser:	Shimizu, Hirofumi, Hagiwara, Hiroyuki
Format:	Artikel
Sprache:	eng
Schlagworte:	Contamination Emittance Iron Oxidation Oxides Silicon Silicon dioxide Silicon substrates
Online-Zugang:	Volltext
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