Efficiency Improvement of 630nm AlGaInP Light-Emitting Diodes based on AlGaAs Bottom Window

Metal organic chemical vapor deposition (MOCVD) based aluminum gallium arsenide (AlGaAs) used as the bottom window (BW), which was inserted between the light-emitting diode (LED) structure and the absorbing substrate, has been proposed to improve the extraction efficiency of 630nm AlGaInP LEDs. In a...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Japanese Journal of Applied Physics 2013-10, Vol.52 (10R), p.102101-1-102101-4
Hauptverfasser:	Lee, Hyung Joo, Kim, Young Jin, Kim, Seong Un, Jo, Ju Ung, Lee, Choong Hun, Kim, Jae Hoon, Ahn, Su Chang
Format:	Artikel
Sprache:	eng
Schlagworte:	Absorption Aluminum gallium arsenides Bragg reflectors Emittance Extraction Injection current Light-emitting diodes Metal organic chemical vapor deposition
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!