Switching Mode and Mechanism in Binary Oxide Resistive Random Access Memory Using Ni Electrode

Resistive-switching (RS) modes in different CMOS-compatible binary oxides have been shown to be governed by the interplay with the Ni top electrode. Unipolar RS and metallic low-resistance state in polycrystalline HfO 2 and ZrO 2 are distinct from the preferential bipolar RS and semiconductive low-r...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2013-03, Vol.52 (3), p.031801-031801-5
Hauptverfasser:	Lin, Kuan-Liang, Hou, Tuo-Hung, Lee, Yao-Jen, Chang, Jhe-Wei, Lin, Jun-Hung, Shieh, Jiann, Chou, Cheng-Tung, Lei, Tan-Fu, Chang, Wen-Hsiung, Jang, Wen-Yueh, Lin, Chen-Hsi
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum oxide Electrodes Filaments Formations Hafnium oxide Nickel Oxides Secondary ion mass spectrometry
Online-Zugang:	Volltext
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