Epitaxial growth of graphene on transition metal surfaces: chemical vapor deposition versus liquid phase deposition
The epitaxial growth of graphene on transition metal surfaces by ex situ deposition of liquid precursors (LPD, liquid phase deposition) is compared to the standard method of chemical vapor deposition (CVD). The performance of LPD strongly depends on the particular transition metal surface. For Pt(11...
Gespeichert in:
| Veröffentlicht in: | Journal of physics. Condensed matter 2012-08, Vol.24 (31), p.314204-314204 |
|---|---|
| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 314204 |
|---|---|
| container_issue | 31 |
| container_start_page | 314204 |
| container_title | Journal of physics. Condensed matter |
| container_volume | 24 |
| creator | Grandthyll, Samuel Gsell, Stefan Weinl, Michael Schreck, Matthias Hüfner, Stefan Müller, Frank |
| description | The epitaxial growth of graphene on transition metal surfaces by ex situ deposition of liquid precursors (LPD, liquid phase deposition) is compared to the standard method of chemical vapor deposition (CVD). The performance of LPD strongly depends on the particular transition metal surface. For Pt(111), Ir(111) and Rh(111), the formation of a graphene monolayer is hardly affected by the way the precursor is provided. In the case of Ni(111), the growth of graphene strongly depends on the applied synthesis method. For CVD of propene on Ni(111), a 1 × 1 structure as expected from the vanishing lattice mismatch is observed. However, in spite of the nearly perfect lattice match, a multi-domain structure with 1 × 1 and two additional rotated domains is obtained when an oxygen-containing precursor (acetone) is provided ex situ. |
| doi_str_mv | 10.1088/0953-8984/24/31/314204 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_pubme</sourceid><recordid>TN_cdi_proquest_miscellaneous_1671632882</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1030875292</sourcerecordid><originalsourceid>FETCH-LOGICAL-c483t-5dae93de8695f133b3b31a99831d720105d2fbc063e08b9d857e98f1a275e1833</originalsourceid><addsrcrecordid>eNqFkU1r3DAQhkVJaLab_oXFl0Iu7urDlke9lZB-QCCXBHITWnvcVbAtR2Pn499Hy263vQUNaNA8oxnel7GV4F8FB1hzU6ocDBRrWayVSFFIXnxgC6G0yHUB9ydscYTO2CeiB855Aar4yM6khETrasHoavSTe_Guy_7E8Dxts9CmzI1bHDALQzZFN5CffEp7nBJGc2xdjfQtq7fY-zo9PbkxxKzBMRzIJ4w0U9b5x9k32bh1hP-Vz9lp6zrCz4d7ye5-XN1e_sqvb37-vvx-nddpzSkvG4dGNQjalK1QapOOcMaAEk0lueBlI9tNzbVCDhvTQFmhgVY4WZUoQKklu9j_O8bwOCNNtvdUY9e5AcNMVuhKaCUB5PsoVxyqUpodqvdoHQNRxNaO0fcuvibI7ryxO9ntTnYrC6uE3XuTGleHGfOmx-bY9teMBHw5AI6SrG1Svvb0j9OSg06bLJnccz6M9iHMcUgqvjf9Db9FpuA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1030875292</pqid></control><display><type>article</type><title>Epitaxial growth of graphene on transition metal surfaces: chemical vapor deposition versus liquid phase deposition</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>Grandthyll, Samuel ; Gsell, Stefan ; Weinl, Michael ; Schreck, Matthias ; Hüfner, Stefan ; Müller, Frank</creator><creatorcontrib>Grandthyll, Samuel ; Gsell, Stefan ; Weinl, Michael ; Schreck, Matthias ; Hüfner, Stefan ; Müller, Frank</creatorcontrib><description>The epitaxial growth of graphene on transition metal surfaces by ex situ deposition of liquid precursors (LPD, liquid phase deposition) is compared to the standard method of chemical vapor deposition (CVD). The performance of LPD strongly depends on the particular transition metal surface. For Pt(111), Ir(111) and Rh(111), the formation of a graphene monolayer is hardly affected by the way the precursor is provided. In the case of Ni(111), the growth of graphene strongly depends on the applied synthesis method. For CVD of propene on Ni(111), a 1 × 1 structure as expected from the vanishing lattice mismatch is observed. However, in spite of the nearly perfect lattice match, a multi-domain structure with 1 × 1 and two additional rotated domains is obtained when an oxygen-containing precursor (acetone) is provided ex situ.</description><identifier>ISSN: 0953-8984</identifier><identifier>EISSN: 1361-648X</identifier><identifier>DOI: 10.1088/0953-8984/24/31/314204</identifier><identifier>PMID: 22820467</identifier><identifier>CODEN: JCOMEL</identifier><language>eng</language><publisher>Bristol: IOP Publishing</publisher><subject>Chemical vapor deposition ; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) ; Condensed matter ; Cross-disciplinary physics: materials science; rheology ; Epitaxial growth ; Exact sciences and technology ; Graphene ; Lattices ; Liquid phase deposition ; Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids) ; Materials science ; Methods of deposition of films and coatings; film growth and epitaxy ; Physics ; Precursors ; Transition metals</subject><ispartof>Journal of physics. Condensed matter, 2012-08, Vol.24 (31), p.314204-314204</ispartof><rights>2012 IOP Publishing Ltd</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c483t-5dae93de8695f133b3b31a99831d720105d2fbc063e08b9d857e98f1a275e1833</citedby><cites>FETCH-LOGICAL-c483t-5dae93de8695f133b3b31a99831d720105d2fbc063e08b9d857e98f1a275e1833</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.1088/0953-8984/24/31/314204/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>314,776,780,27901,27902,53821,53868</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=26208610$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/22820467$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Grandthyll, Samuel</creatorcontrib><creatorcontrib>Gsell, Stefan</creatorcontrib><creatorcontrib>Weinl, Michael</creatorcontrib><creatorcontrib>Schreck, Matthias</creatorcontrib><creatorcontrib>Hüfner, Stefan</creatorcontrib><creatorcontrib>Müller, Frank</creatorcontrib><title>Epitaxial growth of graphene on transition metal surfaces: chemical vapor deposition versus liquid phase deposition</title><title>Journal of physics. Condensed matter</title><addtitle>JPhysCM</addtitle><addtitle>J. Phys.: Condens. Matter</addtitle><description>The epitaxial growth of graphene on transition metal surfaces by ex situ deposition of liquid precursors (LPD, liquid phase deposition) is compared to the standard method of chemical vapor deposition (CVD). The performance of LPD strongly depends on the particular transition metal surface. For Pt(111), Ir(111) and Rh(111), the formation of a graphene monolayer is hardly affected by the way the precursor is provided. In the case of Ni(111), the growth of graphene strongly depends on the applied synthesis method. For CVD of propene on Ni(111), a 1 × 1 structure as expected from the vanishing lattice mismatch is observed. However, in spite of the nearly perfect lattice match, a multi-domain structure with 1 × 1 and two additional rotated domains is obtained when an oxygen-containing precursor (acetone) is provided ex situ.</description><subject>Chemical vapor deposition</subject><subject>Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)</subject><subject>Condensed matter</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Epitaxial growth</subject><subject>Exact sciences and technology</subject><subject>Graphene</subject><subject>Lattices</subject><subject>Liquid phase deposition</subject><subject>Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)</subject><subject>Materials science</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Physics</subject><subject>Precursors</subject><subject>Transition metals</subject><issn>0953-8984</issn><issn>1361-648X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNqFkU1r3DAQhkVJaLab_oXFl0Iu7urDlke9lZB-QCCXBHITWnvcVbAtR2Pn499Hy263vQUNaNA8oxnel7GV4F8FB1hzU6ocDBRrWayVSFFIXnxgC6G0yHUB9ydscYTO2CeiB855Aar4yM6khETrasHoavSTe_Guy_7E8Dxts9CmzI1bHDALQzZFN5CffEp7nBJGc2xdjfQtq7fY-zo9PbkxxKzBMRzIJ4w0U9b5x9k32bh1hP-Vz9lp6zrCz4d7ye5-XN1e_sqvb37-vvx-nddpzSkvG4dGNQjalK1QapOOcMaAEk0lueBlI9tNzbVCDhvTQFmhgVY4WZUoQKklu9j_O8bwOCNNtvdUY9e5AcNMVuhKaCUB5PsoVxyqUpodqvdoHQNRxNaO0fcuvibI7ryxO9ntTnYrC6uE3XuTGleHGfOmx-bY9teMBHw5AI6SrG1Svvb0j9OSg06bLJnccz6M9iHMcUgqvjf9Db9FpuA</recordid><startdate>20120808</startdate><enddate>20120808</enddate><creator>Grandthyll, Samuel</creator><creator>Gsell, Stefan</creator><creator>Weinl, Michael</creator><creator>Schreck, Matthias</creator><creator>Hüfner, Stefan</creator><creator>Müller, Frank</creator><general>IOP Publishing</general><general>Institute of Physics</general><scope>IQODW</scope><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20120808</creationdate><title>Epitaxial growth of graphene on transition metal surfaces: chemical vapor deposition versus liquid phase deposition</title><author>Grandthyll, Samuel ; Gsell, Stefan ; Weinl, Michael ; Schreck, Matthias ; Hüfner, Stefan ; Müller, Frank</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c483t-5dae93de8695f133b3b31a99831d720105d2fbc063e08b9d857e98f1a275e1833</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Chemical vapor deposition</topic><topic>Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)</topic><topic>Condensed matter</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Epitaxial growth</topic><topic>Exact sciences and technology</topic><topic>Graphene</topic><topic>Lattices</topic><topic>Liquid phase deposition</topic><topic>Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)</topic><topic>Materials science</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Physics</topic><topic>Precursors</topic><topic>Transition metals</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Grandthyll, Samuel</creatorcontrib><creatorcontrib>Gsell, Stefan</creatorcontrib><creatorcontrib>Weinl, Michael</creatorcontrib><creatorcontrib>Schreck, Matthias</creatorcontrib><creatorcontrib>Hüfner, Stefan</creatorcontrib><creatorcontrib>Müller, Frank</creatorcontrib><collection>Pascal-Francis</collection><collection>PubMed</collection><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of physics. Condensed matter</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Grandthyll, Samuel</au><au>Gsell, Stefan</au><au>Weinl, Michael</au><au>Schreck, Matthias</au><au>Hüfner, Stefan</au><au>Müller, Frank</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Epitaxial growth of graphene on transition metal surfaces: chemical vapor deposition versus liquid phase deposition</atitle><jtitle>Journal of physics. Condensed matter</jtitle><stitle>JPhysCM</stitle><addtitle>J. Phys.: Condens. Matter</addtitle><date>2012-08-08</date><risdate>2012</risdate><volume>24</volume><issue>31</issue><spage>314204</spage><epage>314204</epage><pages>314204-314204</pages><issn>0953-8984</issn><eissn>1361-648X</eissn><coden>JCOMEL</coden><abstract>The epitaxial growth of graphene on transition metal surfaces by ex situ deposition of liquid precursors (LPD, liquid phase deposition) is compared to the standard method of chemical vapor deposition (CVD). The performance of LPD strongly depends on the particular transition metal surface. For Pt(111), Ir(111) and Rh(111), the formation of a graphene monolayer is hardly affected by the way the precursor is provided. In the case of Ni(111), the growth of graphene strongly depends on the applied synthesis method. For CVD of propene on Ni(111), a 1 × 1 structure as expected from the vanishing lattice mismatch is observed. However, in spite of the nearly perfect lattice match, a multi-domain structure with 1 × 1 and two additional rotated domains is obtained when an oxygen-containing precursor (acetone) is provided ex situ.</abstract><cop>Bristol</cop><pub>IOP Publishing</pub><pmid>22820467</pmid><doi>10.1088/0953-8984/24/31/314204</doi><tpages>15</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0953-8984 |
| ispartof | Journal of physics. Condensed matter, 2012-08, Vol.24 (31), p.314204-314204 |
| issn | 0953-8984 1361-648X |
| language | eng |
| recordid | cdi_proquest_miscellaneous_1671632882 |
| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | Chemical vapor deposition Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Condensed matter Cross-disciplinary physics: materials science rheology Epitaxial growth Exact sciences and technology Graphene Lattices Liquid phase deposition Liquid phase epitaxy deposition from liquid phases (melts, solutions, and surface layers on liquids) Materials science Methods of deposition of films and coatings film growth and epitaxy Physics Precursors Transition metals |
| title | Epitaxial growth of graphene on transition metal surfaces: chemical vapor deposition versus liquid phase deposition |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-13T12%3A38%3A51IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_pubme&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Epitaxial%20growth%20of%20graphene%20on%20transition%20metal%20surfaces:%20chemical%20vapor%20deposition%20versus%20liquid%20phase%20deposition&rft.jtitle=Journal%20of%20physics.%20Condensed%20matter&rft.au=Grandthyll,%20Samuel&rft.date=2012-08-08&rft.volume=24&rft.issue=31&rft.spage=314204&rft.epage=314204&rft.pages=314204-314204&rft.issn=0953-8984&rft.eissn=1361-648X&rft.coden=JCOMEL&rft_id=info:doi/10.1088/0953-8984/24/31/314204&rft_dat=%3Cproquest_pubme%3E1030875292%3C/proquest_pubme%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1030875292&rft_id=info:pmid/22820467&rfr_iscdi=true |