Reliability Evaluation of 4H-SiC JFETs Using I-V Characteristics and Low Frequency Noise

Two sets of 4H-SiC signal-lateral JFETs were thermally aged at 400°C and 500°C in furnaces open to air for 1000 hours. I"-" V and low frequency noise measurements were performed on these devices and the results were compared against the as-fabricated sample. The data from I"-" V...

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Veröffentlicht in:	Materials science forum 2013-01, Vol.740-742, p.934-937
Hauptverfasser:	Stevens, Rupert C., Chan, Hua Khee, Horsfall, Alton B., Goss, Jonathan P., Wright, Nicholas G.
Format:	Artikel
Sprache:	eng
Schlagworte:	Density Devices Electric potential JFET Low frequencies Noise Noise measurement Spectra
Online-Zugang:	Volltext
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