Study of the Effects of Growth Rate, Miscut Direction and Postgrowth Argon Annealing on the Surface Morphology of Homoepitaxially Grown 4H Silicon Carbide Films

we study the surface morphology of homoepitaxially grown 4H silicon carbide in terms of growth rate, miscut direction of the substrate and post growth argon thermal annealings. All the results indicate that the final surface morphology is the result of a competition between energetic reorganization...

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Veröffentlicht in:	Materials science forum 2013-01, Vol.740-742, p.229-234
Hauptverfasser:	La Via, Francesco, Mauceri, Marco, Crippa, Danilo, Pecora, Antonino, Litrico, Grazia, Canino, Andrea, Privitera, Stefania, Fiorenza, Patrick, Anzalone, Ruggero, Vecchio, Carmelo, La Magna, Antonino, Severino, Andrea, Camarda, Massimo
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Argon Computer simulation Monte Carlo methods Morphology Silicon carbide Silicon substrates Surface roughness
Online-Zugang:	Volltext
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