GaN PIN betavoltaic nuclear batteries
GaN PIN betavoltaic nuclear batteries are demonstrated in this work. GaN epitaxial layers were grown on 2-inch sapphire sub-strates by MOCVD, and then the GaN PIN nuclear batteries were fabricated. Current-voltage （l-V） characteristic shows that the small leakage currents are 0.12 nA at 0 V and 1.76...
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| Veröffentlicht in: | Science China. Technological sciences 2014, Vol.57 (1), p.25-28 |
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| container_title | Science China. Technological sciences |
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| creator | Li, FengHua Gao, Xu Yuan, YuanLin Yuan, JinShe Lu, Min |
| description | GaN PIN betavoltaic nuclear batteries are demonstrated in this work. GaN epitaxial layers were grown on 2-inch sapphire sub-strates by MOCVD, and then the GaN PIN nuclear batteries were fabricated. Current-voltage （l-V） characteristic shows that the small leakage currents are 0.12 nA at 0 V and 1.76 nA at -10 V, respectively. With 147Pm the irradiation source, the maximum open circuit voltage and maximum short circuit current are 1.07 V and 0.554 nA, respectively. The fill factor （FF） of 24.7% for the battery was been obtained. The limited performance of the devices is mainly due to the low energy deposition in the microbatteries. Therefore, the GaN nuclear microbatteries are expected to be optimized by growing high quality GaN films, thin dead layer and so on. |
| doi_str_mv | 10.1007/s11431-013-5422-z |
| format | Article |
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GaN epitaxial layers were grown on 2-inch sapphire sub-strates by MOCVD, and then the GaN PIN nuclear batteries were fabricated. Current-voltage （l-V） characteristic shows that the small leakage currents are 0.12 nA at 0 V and 1.76 nA at -10 V, respectively. With 147Pm the irradiation source, the maximum open circuit voltage and maximum short circuit current are 1.07 V and 0.554 nA, respectively. The fill factor （FF） of 24.7% for the battery was been obtained. The limited performance of the devices is mainly due to the low energy deposition in the microbatteries. Therefore, the GaN nuclear microbatteries are expected to be optimized by growing high quality GaN films, thin dead layer and so on.</description><identifier>ISSN: 1674-7321</identifier><identifier>EISSN: 1869-1900</identifier><identifier>DOI: 10.1007/s11431-013-5422-z</identifier><language>eng</language><publisher>Berlin/Heidelberg: Springer Berlin Heidelberg</publisher><subject>China ; Deposition ; Engineering ; Gallium nitrides ; GaN薄膜 ; Leakage current ; MOCVD ; Open circuit voltage ; pin ; Short circuit currents ; Thin films ; Volt-ampere characteristics ; 外延层生长 ; 开路电压 ; 核电池 ; 氮化镓 ; 短路电流</subject><ispartof>Science China. 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Technological sciences</title><addtitle>Sci. China Technol. Sci</addtitle><addtitle>SCIENCE CHINA Technological Sciences</addtitle><description>GaN PIN betavoltaic nuclear batteries are demonstrated in this work. GaN epitaxial layers were grown on 2-inch sapphire sub-strates by MOCVD, and then the GaN PIN nuclear batteries were fabricated. Current-voltage （l-V） characteristic shows that the small leakage currents are 0.12 nA at 0 V and 1.76 nA at -10 V, respectively. With 147Pm the irradiation source, the maximum open circuit voltage and maximum short circuit current are 1.07 V and 0.554 nA, respectively. The fill factor （FF） of 24.7% for the battery was been obtained. The limited performance of the devices is mainly due to the low energy deposition in the microbatteries. Therefore, the GaN nuclear microbatteries are expected to be optimized by growing high quality GaN films, thin dead layer and so on.</description><subject>China</subject><subject>Deposition</subject><subject>Engineering</subject><subject>Gallium nitrides</subject><subject>GaN薄膜</subject><subject>Leakage current</subject><subject>MOCVD</subject><subject>Open circuit voltage</subject><subject>pin</subject><subject>Short circuit currents</subject><subject>Thin films</subject><subject>Volt-ampere characteristics</subject><subject>外延层生长</subject><subject>开路电压</subject><subject>核电池</subject><subject>氮化镓</subject><subject>短路电流</subject><issn>1674-7321</issn><issn>1869-1900</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNp9kDFPwzAQhS0EElXpD2ALAxKLwRc7sTOiCkqlqjB0t2znUlKlSWsnSPTXY5SKkVvuhvfd03uE3AJ7BMbkUwAQHCgDTjORpvR0QSag8oJCwdhlvHMpqOQpXJNZCDsWh6uCgZiQ-4VZJx_LdWKxN19d05vaJe3gGjQ-sabv0dcYbshVZZqAs_Oeks3ry2b-Rlfvi-X8eUUdF7KnxlbIS8iwFAVzXAIXypUCWWnzHHglbZqxtCyskcyqymQoFMsrV9qqwKzkU_Iwvj347jhg6PW-Dg6bxrTYDUHHHJDHqDKNUhilzncheKz0wdd74781MP1bih5L0bEU_VuKPkUmHZkQte0Wvd51g29joH-hu7PRZ9duj5H7cxJKFCrjiv8AjXtu8Q</recordid><startdate>2014</startdate><enddate>2014</enddate><creator>Li, FengHua</creator><creator>Gao, Xu</creator><creator>Yuan, YuanLin</creator><creator>Yuan, JinShe</creator><creator>Lu, Min</creator><general>Springer Berlin Heidelberg</general><scope>2RA</scope><scope>92L</scope><scope>CQIGP</scope><scope>W92</scope><scope>~WA</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>7SP</scope><scope>7SR</scope><scope>7TB</scope><scope>8BQ</scope><scope>8FD</scope><scope>FR3</scope><scope>JG9</scope><scope>KR7</scope><scope>L7M</scope></search><sort><creationdate>2014</creationdate><title>GaN PIN betavoltaic nuclear batteries</title><author>Li, FengHua ; Gao, Xu ; Yuan, YuanLin ; Yuan, JinShe ; Lu, Min</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c347t-abfe3d15ed490c371348cd4e0db6613f7b2502d9ba70b8fa5e4806fcdbf9e5d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>China</topic><topic>Deposition</topic><topic>Engineering</topic><topic>Gallium nitrides</topic><topic>GaN薄膜</topic><topic>Leakage current</topic><topic>MOCVD</topic><topic>Open circuit voltage</topic><topic>pin</topic><topic>Short circuit currents</topic><topic>Thin films</topic><topic>Volt-ampere characteristics</topic><topic>外延层生长</topic><topic>开路电压</topic><topic>核电池</topic><topic>氮化镓</topic><topic>短路电流</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Li, FengHua</creatorcontrib><creatorcontrib>Gao, Xu</creatorcontrib><creatorcontrib>Yuan, YuanLin</creatorcontrib><creatorcontrib>Yuan, JinShe</creatorcontrib><creatorcontrib>Lu, Min</creatorcontrib><collection>中文科技期刊数据库</collection><collection>中文科技期刊数据库-CALIS站点</collection><collection>中文科技期刊数据库-7.0平台</collection><collection>中文科技期刊数据库-工程技术</collection><collection>中文科技期刊数据库- 镜像站点</collection><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Engineering Research Database</collection><collection>Materials Research Database</collection><collection>Civil Engineering Abstracts</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Science China. Technological sciences</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Li, FengHua</au><au>Gao, Xu</au><au>Yuan, YuanLin</au><au>Yuan, JinShe</au><au>Lu, Min</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>GaN PIN betavoltaic nuclear batteries</atitle><jtitle>Science China. Technological sciences</jtitle><stitle>Sci. China Technol. Sci</stitle><addtitle>SCIENCE CHINA Technological Sciences</addtitle><date>2014</date><risdate>2014</risdate><volume>57</volume><issue>1</issue><spage>25</spage><epage>28</epage><pages>25-28</pages><issn>1674-7321</issn><eissn>1869-1900</eissn><abstract>GaN PIN betavoltaic nuclear batteries are demonstrated in this work. GaN epitaxial layers were grown on 2-inch sapphire sub-strates by MOCVD, and then the GaN PIN nuclear batteries were fabricated. Current-voltage （l-V） characteristic shows that the small leakage currents are 0.12 nA at 0 V and 1.76 nA at -10 V, respectively. With 147Pm the irradiation source, the maximum open circuit voltage and maximum short circuit current are 1.07 V and 0.554 nA, respectively. The fill factor （FF） of 24.7% for the battery was been obtained. The limited performance of the devices is mainly due to the low energy deposition in the microbatteries. Therefore, the GaN nuclear microbatteries are expected to be optimized by growing high quality GaN films, thin dead layer and so on.</abstract><cop>Berlin/Heidelberg</cop><pub>Springer Berlin Heidelberg</pub><doi>10.1007/s11431-013-5422-z</doi><tpages>4</tpages></addata></record> |
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| subjects | China Deposition Engineering Gallium nitrides GaN薄膜 Leakage current MOCVD Open circuit voltage pin Short circuit currents Thin films Volt-ampere characteristics 外延层生长 开路电压 核电池 氮化镓 短路电流 |
| title | GaN PIN betavoltaic nuclear batteries |
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