Control the Composition of Tantalum Oxynitride Films by Sputtering a Tantalum Target in Ar/O sub(2)/N sub(2) Radiofrequency Magnetron Plasmas

Tantalum oxynitride films can be deposited with a high versatility in composition by reactive sputtering of a tantalum target in Ar/O sub(2)/N sub(2) mixtures. In this paper, plasma analysis was performed from simple to more complex Ar/O sub(2)/N sub(2) gas mixtures and linked to the layer elemental...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Plasma processes and polymers 2013-11, Vol.10 (11), p.990-998
Hauptverfasser:	Bousquet, Angelique, Zoubian, Fadi, Cellier, Joeel, Sauvage, Thierry, Tomasella, Eric
Format:	Artikel
Sprache:	eng
Schlagworte:	Deposition Gas mixtures Nitrides Oxides Oxynitrides Plasmas Sputtering Tantalum
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!