The effect of MWCNTs on the performance of α-sexithiophene OTFT device and its gas-sensing property
In this paper,bottom contact organic thin-film transistor(OTFT)gas sensors were prepared.Silicon dioxide(SiO2)and titanium/aurum(Ti/Au)were used as the insulating layer and the electrode for the device,respectively.The multi-walled carbon nanotubes(MWCNTs)/α-sexithiophene(α-6T)bilayer films were use...
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Veröffentlicht in: | Science China. Technological sciences 2014-06, Vol.57 (6), p.1101-1108 |
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description | In this paper,bottom contact organic thin-film transistor(OTFT)gas sensors were prepared.Silicon dioxide(SiO2)and titanium/aurum(Ti/Au)were used as the insulating layer and the electrode for the device,respectively.The multi-walled carbon nanotubes(MWCNTs)/α-sexithiophene(α-6T)bilayer films were used as the active layer,andα-6T single layer sensitive film was also prepared for comparison purpose.The electrical and trace NO2-sening properties of these two OTFT gas sensors were tested and analyzed.The results showed that,the OTFT device based on MWCNTs/α-6T bilayer had obviously better electrical properties,better stabilities and higher NO2-sening response values than the device withα-6T single layer,in which both the carrier mobility(μ)and on/off current ratio enhanced two order of magnitude.The improved performance of bilayer OTFT can be explained that MWCNTs acted as highly conducting bridges connecting the crystalline terraces in theα-6T film.Threshold voltage(VT),carrier mobility,on/off current ratio and grid current which showed extremely similar variation trend as source-drain current,were optional parameters to reveal the gas-sensing characteristic of OTFT gas sensors.Morphology analysis showed that the special feature of MWCNTs had certain influence on the gas-sensing properties. |
doi_str_mv | 10.1007/s11431-014-5539-8 |
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fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1671599644</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><cqvip_id>49883407</cqvip_id><sourcerecordid>1671599644</sourcerecordid><originalsourceid>FETCH-LOGICAL-c380t-d3819d17a56350871e590c178f2edb41560c54a224dc5783fd0c0d791655958e3</originalsourceid><addsrcrecordid>eNp9kM9OAyEQxjdGE436AN7w5gVlFljgaBr_JVUvazySFWbbNS1U2Bp9LF_EZ5KmxqNzYTLzffOFX1WdADsHxtRFBhAcKANBpeSG6p3qAHRjKBjGdkvfKEEVr2G_Os75lZXi2hT5QeXbORLse3QjiT25f548tJnEQMYyX2HqY1p2weFm-f1FM34M43yIqzkGJI_tdUs8vg9l3wVPhjGTWZeLKuQhzMgqxXJi_Dyq9vpukfH49z2snq6v2sktnT7e3E0up9RxzUbquQbjQXWy4ZJpBSgNc6B0X6N_ESAb5qTo6lp4J5XmvWeOeWWgkdJIjfywOtveLcFva8yjXQ7Z4WLRBYzrbAsHkMY0QhQpbKUuxZwT9naVhmWXPi0wu4Fqt1BtoWQ3UK0unnrryUUbZpjsa1ynUH70r-n0N2gew-yt-P6ShNGaC6b4D6DXhA0</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1671599644</pqid></control><display><type>article</type><title>The effect of MWCNTs on the performance of α-sexithiophene OTFT device and its gas-sensing property</title><source>SpringerNature Journals</source><source>Alma/SFX Local Collection</source><creator>Tai, HuiLing ; Zhang, Bo ; Duan, ChengLi ; Xie, GuangZhong ; Jiang, YaDong</creator><creatorcontrib>Tai, HuiLing ; Zhang, Bo ; Duan, ChengLi ; Xie, GuangZhong ; Jiang, YaDong</creatorcontrib><description>In this paper,bottom contact organic thin-film transistor(OTFT)gas sensors were prepared.Silicon dioxide(SiO2)and titanium/aurum(Ti/Au)were used as the insulating layer and the electrode for the device,respectively.The multi-walled carbon nanotubes(MWCNTs)/α-sexithiophene(α-6T)bilayer films were used as the active layer,andα-6T single layer sensitive film was also prepared for comparison purpose.The electrical and trace NO2-sening properties of these two OTFT gas sensors were tested and analyzed.The results showed that,the OTFT device based on MWCNTs/α-6T bilayer had obviously better electrical properties,better stabilities and higher NO2-sening response values than the device withα-6T single layer,in which both the carrier mobility(μ)and on/off current ratio enhanced two order of magnitude.The improved performance of bilayer OTFT can be explained that MWCNTs acted as highly conducting bridges connecting the crystalline terraces in theα-6T film.Threshold voltage(VT),carrier mobility,on/off current ratio and grid current which showed extremely similar variation trend as source-drain current,were optional parameters to reveal the gas-sensing characteristic of OTFT gas sensors.Morphology analysis showed that the special feature of MWCNTs had certain influence on the gas-sensing properties.</description><identifier>ISSN: 1674-7321</identifier><identifier>EISSN: 1869-1900</identifier><identifier>DOI: 10.1007/s11431-014-5539-8</identifier><language>eng</language><publisher>Heidelberg: Science China Press</publisher><subject>Carrier mobility ; Devices ; Electrodes ; Engineering ; Gas sensors ; Morphology ; Silicon dioxide ; TFT器件 ; Thin film transistors ; Threshold voltage ; Titanium ; 噻吩 ; 多壁碳纳米管 ; 有机薄膜晶体管 ; 气体传感器 ; 气敏特性 ; 电性能 ; 载流子迁移率</subject><ispartof>Science China. Technological sciences, 2014-06, Vol.57 (6), p.1101-1108</ispartof><rights>Science China Press and Springer-Verlag Berlin Heidelberg 2014</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c380t-d3819d17a56350871e590c178f2edb41560c54a224dc5783fd0c0d791655958e3</citedby><cites>FETCH-LOGICAL-c380t-d3819d17a56350871e590c178f2edb41560c54a224dc5783fd0c0d791655958e3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttp://image.cqvip.com/vip1000/qk/60110X/60110X.jpg</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s11431-014-5539-8$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s11431-014-5539-8$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>315,781,785,27929,27930,41493,42562,51324</link.rule.ids></links><search><creatorcontrib>Tai, HuiLing</creatorcontrib><creatorcontrib>Zhang, Bo</creatorcontrib><creatorcontrib>Duan, ChengLi</creatorcontrib><creatorcontrib>Xie, GuangZhong</creatorcontrib><creatorcontrib>Jiang, YaDong</creatorcontrib><title>The effect of MWCNTs on the performance of α-sexithiophene OTFT device and its gas-sensing property</title><title>Science China. Technological sciences</title><addtitle>Sci. China Technol. Sci</addtitle><addtitle>SCIENCE CHINA Technological Sciences</addtitle><description>In this paper,bottom contact organic thin-film transistor(OTFT)gas sensors were prepared.Silicon dioxide(SiO2)and titanium/aurum(Ti/Au)were used as the insulating layer and the electrode for the device,respectively.The multi-walled carbon nanotubes(MWCNTs)/α-sexithiophene(α-6T)bilayer films were used as the active layer,andα-6T single layer sensitive film was also prepared for comparison purpose.The electrical and trace NO2-sening properties of these two OTFT gas sensors were tested and analyzed.The results showed that,the OTFT device based on MWCNTs/α-6T bilayer had obviously better electrical properties,better stabilities and higher NO2-sening response values than the device withα-6T single layer,in which both the carrier mobility(μ)and on/off current ratio enhanced two order of magnitude.The improved performance of bilayer OTFT can be explained that MWCNTs acted as highly conducting bridges connecting the crystalline terraces in theα-6T film.Threshold voltage(VT),carrier mobility,on/off current ratio and grid current which showed extremely similar variation trend as source-drain current,were optional parameters to reveal the gas-sensing characteristic of OTFT gas sensors.Morphology analysis showed that the special feature of MWCNTs had certain influence on the gas-sensing properties.</description><subject>Carrier mobility</subject><subject>Devices</subject><subject>Electrodes</subject><subject>Engineering</subject><subject>Gas sensors</subject><subject>Morphology</subject><subject>Silicon dioxide</subject><subject>TFT器件</subject><subject>Thin film transistors</subject><subject>Threshold voltage</subject><subject>Titanium</subject><subject>噻吩</subject><subject>多壁碳纳米管</subject><subject>有机薄膜晶体管</subject><subject>气体传感器</subject><subject>气敏特性</subject><subject>电性能</subject><subject>载流子迁移率</subject><issn>1674-7321</issn><issn>1869-1900</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNp9kM9OAyEQxjdGE436AN7w5gVlFljgaBr_JVUvazySFWbbNS1U2Bp9LF_EZ5KmxqNzYTLzffOFX1WdADsHxtRFBhAcKANBpeSG6p3qAHRjKBjGdkvfKEEVr2G_Os75lZXi2hT5QeXbORLse3QjiT25f548tJnEQMYyX2HqY1p2weFm-f1FM34M43yIqzkGJI_tdUs8vg9l3wVPhjGTWZeLKuQhzMgqxXJi_Dyq9vpukfH49z2snq6v2sktnT7e3E0up9RxzUbquQbjQXWy4ZJpBSgNc6B0X6N_ESAb5qTo6lp4J5XmvWeOeWWgkdJIjfywOtveLcFva8yjXQ7Z4WLRBYzrbAsHkMY0QhQpbKUuxZwT9naVhmWXPi0wu4Fqt1BtoWQ3UK0unnrryUUbZpjsa1ynUH70r-n0N2gew-yt-P6ShNGaC6b4D6DXhA0</recordid><startdate>20140601</startdate><enddate>20140601</enddate><creator>Tai, HuiLing</creator><creator>Zhang, Bo</creator><creator>Duan, ChengLi</creator><creator>Xie, GuangZhong</creator><creator>Jiang, YaDong</creator><general>Science China Press</general><scope>2RA</scope><scope>92L</scope><scope>CQIGP</scope><scope>W92</scope><scope>~WA</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7TB</scope><scope>8BQ</scope><scope>8FD</scope><scope>FR3</scope><scope>JG9</scope><scope>KR7</scope></search><sort><creationdate>20140601</creationdate><title>The effect of MWCNTs on the performance of α-sexithiophene OTFT device and its gas-sensing property</title><author>Tai, HuiLing ; Zhang, Bo ; Duan, ChengLi ; Xie, GuangZhong ; Jiang, YaDong</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c380t-d3819d17a56350871e590c178f2edb41560c54a224dc5783fd0c0d791655958e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Carrier mobility</topic><topic>Devices</topic><topic>Electrodes</topic><topic>Engineering</topic><topic>Gas sensors</topic><topic>Morphology</topic><topic>Silicon dioxide</topic><topic>TFT器件</topic><topic>Thin film transistors</topic><topic>Threshold voltage</topic><topic>Titanium</topic><topic>噻吩</topic><topic>多壁碳纳米管</topic><topic>有机薄膜晶体管</topic><topic>气体传感器</topic><topic>气敏特性</topic><topic>电性能</topic><topic>载流子迁移率</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Tai, HuiLing</creatorcontrib><creatorcontrib>Zhang, Bo</creatorcontrib><creatorcontrib>Duan, ChengLi</creatorcontrib><creatorcontrib>Xie, GuangZhong</creatorcontrib><creatorcontrib>Jiang, YaDong</creatorcontrib><collection>中文科技期刊数据库</collection><collection>中文科技期刊数据库-CALIS站点</collection><collection>中文科技期刊数据库-7.0平台</collection><collection>中文科技期刊数据库-工程技术</collection><collection>中文科技期刊数据库- 镜像站点</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Engineering Research Database</collection><collection>Materials Research Database</collection><collection>Civil Engineering Abstracts</collection><jtitle>Science China. Technological sciences</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Tai, HuiLing</au><au>Zhang, Bo</au><au>Duan, ChengLi</au><au>Xie, GuangZhong</au><au>Jiang, YaDong</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The effect of MWCNTs on the performance of α-sexithiophene OTFT device and its gas-sensing property</atitle><jtitle>Science China. Technological sciences</jtitle><stitle>Sci. China Technol. Sci</stitle><addtitle>SCIENCE CHINA Technological Sciences</addtitle><date>2014-06-01</date><risdate>2014</risdate><volume>57</volume><issue>6</issue><spage>1101</spage><epage>1108</epage><pages>1101-1108</pages><issn>1674-7321</issn><eissn>1869-1900</eissn><abstract>In this paper,bottom contact organic thin-film transistor(OTFT)gas sensors were prepared.Silicon dioxide(SiO2)and titanium/aurum(Ti/Au)were used as the insulating layer and the electrode for the device,respectively.The multi-walled carbon nanotubes(MWCNTs)/α-sexithiophene(α-6T)bilayer films were used as the active layer,andα-6T single layer sensitive film was also prepared for comparison purpose.The electrical and trace NO2-sening properties of these two OTFT gas sensors were tested and analyzed.The results showed that,the OTFT device based on MWCNTs/α-6T bilayer had obviously better electrical properties,better stabilities and higher NO2-sening response values than the device withα-6T single layer,in which both the carrier mobility(μ)and on/off current ratio enhanced two order of magnitude.The improved performance of bilayer OTFT can be explained that MWCNTs acted as highly conducting bridges connecting the crystalline terraces in theα-6T film.Threshold voltage(VT),carrier mobility,on/off current ratio and grid current which showed extremely similar variation trend as source-drain current,were optional parameters to reveal the gas-sensing characteristic of OTFT gas sensors.Morphology analysis showed that the special feature of MWCNTs had certain influence on the gas-sensing properties.</abstract><cop>Heidelberg</cop><pub>Science China Press</pub><doi>10.1007/s11431-014-5539-8</doi><tpages>8</tpages></addata></record> |
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subjects | Carrier mobility Devices Electrodes Engineering Gas sensors Morphology Silicon dioxide TFT器件 Thin film transistors Threshold voltage Titanium 噻吩 多壁碳纳米管 有机薄膜晶体管 气体传感器 气敏特性 电性能 载流子迁移率 |
title | The effect of MWCNTs on the performance of α-sexithiophene OTFT device and its gas-sensing property |
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