Investigation of the crystalline quality of a gallium oxide thick film grown by RF magnetron sputtering
Crystalline quality and optical properties of gallium oxide films grown on SiO2substrates by RF magnetron sputtering were studied. After the post annealing, it could be confirmed growth of gallium oxide (Ga2O3) film changed in a β ‐Ga2O3 film. Estimated optical energy gap of as‐grown and post anneal...
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| Veröffentlicht in: | Physica status solidi. C 2013-11, Vol.10 (11), p.1588-1591 |
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| container_title | Physica status solidi. C |
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| creator | Ishibashi, Kazuya Aida, Ryohei Takahara, Motoki Kudo, Jyun Tsunoda, Isao Takakura, Kenichiro Nakashima, Toshiyuki Shibuya, Mutsuo Murakami, Katsuya |
| description | Crystalline quality and optical properties of gallium oxide films grown on SiO2substrates by RF magnetron sputtering were studied. After the post annealing, it could be confirmed growth of gallium oxide (Ga2O3) film changed in a β ‐Ga2O3 film. Estimated optical energy gap of as‐grown and post annealed films are the same from 4.85 to 4.90 eV. The energy gap for as‐deposited film corresponds to band gap of β ‐Ga2O3.It has a property of β ‐Ga2O3 nevertheless the as‐deposited Ga2O3 films. The integrated absorption coefficient under the energy gap decreases with increasing thickness of Ga2O3 film. These results indicate that crystalline quality of β ‐Ga2O3 film is improved by increment the film thickness. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
| doi_str_mv | 10.1002/pssc.201300242 |
| format | Article |
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C</title><addtitle>Phys. Status Solidi C</addtitle><description>Crystalline quality and optical properties of gallium oxide films grown on SiO2substrates by RF magnetron sputtering were studied. After the post annealing, it could be confirmed growth of gallium oxide (Ga2O3) film changed in a β ‐Ga2O3 film. Estimated optical energy gap of as‐grown and post annealed films are the same from 4.85 to 4.90 eV. The energy gap for as‐deposited film corresponds to band gap of β ‐Ga2O3.It has a property of β ‐Ga2O3 nevertheless the as‐deposited Ga2O3 films. The integrated absorption coefficient under the energy gap decreases with increasing thickness of Ga2O3 film. These results indicate that crystalline quality of β ‐Ga2O3 film is improved by increment the film thickness. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</description><subject>Annealing</subject><subject>Beta</subject><subject>Crystal structure</subject><subject>Energy gap</subject><subject>Film thickness</subject><subject>gallium oxide</subject><subject>Gallium oxides</subject><subject>Magnetron sputtering</subject><subject>optical absorption coefficient</subject><subject>Radio frequencies</subject><subject>SEM</subject><subject>sputtering</subject><subject>transparent conducting oxide</subject><subject>XRD</subject><issn>1862-6351</issn><issn>1610-1642</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNqFkDlPwzAYhiMEEufKbImFJcVH7MQjVLSAEDdCYrFcxwluc7S2A-Tf46gIIRYmX8_zyt8bRYcIjhCE-GTpnBphiEg4JHgj2kEMwRixBG-GfcZwzAhF29Guc3MICYWI7UTlZfOunTel9KZtQFsA_6aBsr3zsqpMo8Gqk5Xx_fAkQTlcdjVoP02uA2rUAhSmqkFp248GzHrwMAG1LBvtbYhzy857bU1T7kdbhaycPvhe96LnyfnT-CK-vp1ejk-vY0WyDMeUSMLwDGZK5Xmhdc4Yx6nmJNOkSDgqKJ4VMA2TYZilSmE6YwwiniY8ZyRjZC86XucubbvqwmSiNk7pqpKNbjsnEEsR5YziJKBHf9B529km_E6ghEJMOORD4GhNKds6Z3UhltbU0vYCQTH0LobexU_vQeBr4cNUuv-HFnePj-Pfbrx2jfP688eVdiFYSlIqXm6m4moyvoMXr_fijHwBAEeWKA</recordid><startdate>201311</startdate><enddate>201311</enddate><creator>Ishibashi, Kazuya</creator><creator>Aida, Ryohei</creator><creator>Takahara, Motoki</creator><creator>Kudo, Jyun</creator><creator>Tsunoda, Isao</creator><creator>Takakura, Kenichiro</creator><creator>Nakashima, Toshiyuki</creator><creator>Shibuya, Mutsuo</creator><creator>Murakami, Katsuya</creator><general>WILEY-VCH Verlag</general><general>WILEY‐VCH Verlag</general><general>Wiley Subscription Services, Inc</general><scope>BSCLL</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>7SR</scope><scope>JG9</scope></search><sort><creationdate>201311</creationdate><title>Investigation of the crystalline quality of a gallium oxide thick film grown by RF magnetron sputtering</title><author>Ishibashi, Kazuya ; Aida, Ryohei ; Takahara, Motoki ; Kudo, Jyun ; Tsunoda, Isao ; Takakura, Kenichiro ; Nakashima, Toshiyuki ; Shibuya, Mutsuo ; Murakami, Katsuya</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c3882-53a362b08ccddfeed66927e938e3f491f52bf071612087cc25b66019749d63863</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Annealing</topic><topic>Beta</topic><topic>Crystal structure</topic><topic>Energy gap</topic><topic>Film thickness</topic><topic>gallium oxide</topic><topic>Gallium oxides</topic><topic>Magnetron sputtering</topic><topic>optical absorption coefficient</topic><topic>Radio frequencies</topic><topic>SEM</topic><topic>sputtering</topic><topic>transparent conducting oxide</topic><topic>XRD</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ishibashi, Kazuya</creatorcontrib><creatorcontrib>Aida, Ryohei</creatorcontrib><creatorcontrib>Takahara, Motoki</creatorcontrib><creatorcontrib>Kudo, Jyun</creatorcontrib><creatorcontrib>Tsunoda, Isao</creatorcontrib><creatorcontrib>Takakura, Kenichiro</creatorcontrib><creatorcontrib>Nakashima, Toshiyuki</creatorcontrib><creatorcontrib>Shibuya, Mutsuo</creatorcontrib><creatorcontrib>Murakami, Katsuya</creatorcontrib><collection>Istex</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Engineered Materials Abstracts</collection><collection>Materials Research Database</collection><jtitle>Physica status solidi. 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After the post annealing, it could be confirmed growth of gallium oxide (Ga2O3) film changed in a β ‐Ga2O3 film. Estimated optical energy gap of as‐grown and post annealed films are the same from 4.85 to 4.90 eV. The energy gap for as‐deposited film corresponds to band gap of β ‐Ga2O3.It has a property of β ‐Ga2O3 nevertheless the as‐deposited Ga2O3 films. The integrated absorption coefficient under the energy gap decreases with increasing thickness of Ga2O3 film. These results indicate that crystalline quality of β ‐Ga2O3 film is improved by increment the film thickness. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</abstract><cop>Berlin</cop><pub>WILEY-VCH Verlag</pub><doi>10.1002/pssc.201300242</doi><tpages>4</tpages></addata></record> |
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| source | Wiley Online Library Journals Frontfile Complete |
| subjects | Annealing Beta Crystal structure Energy gap Film thickness gallium oxide Gallium oxides Magnetron sputtering optical absorption coefficient Radio frequencies SEM sputtering transparent conducting oxide XRD |
| title | Investigation of the crystalline quality of a gallium oxide thick film grown by RF magnetron sputtering |
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