Electrical characterization of p-Si/SiGe/Si(100) surface covered by 9,10 Phenanthrenequinone over layer

Electrical characterization of the p-Si/SiGe/Si(100) surface covered by organic molecule 9,10 Phenanthrenequinone (PQ), have been evaluated via analysis of hole gas transferred in the SiGe quantum well at low temperature. The enhancement in the density of two dimensional hole gas (2DHG) formed in th...

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Veröffentlicht in:	Vacuum 2014-03, Vol.101, p.267-270
Hauptverfasser:	Gholizadeh Arashti, Maryam, Sadeghzadeh, Mohammad Ali
Format:	Artikel
Sprache:	eng
Schlagworte:	Covering Density Electrical properties Fermi surfaces Quantum wells Si surface Si/SiGe/Si quantum well Silicon Silicon germanides Surface charges Surface Fermi level Surface passivation Surface states Thin films
Online-Zugang:	Volltext
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