Electrical characterization of p-Si/SiGe/Si(100) surface covered by 9,10 Phenanthrenequinone over layer

Electrical characterization of the p-Si/SiGe/Si(100) surface covered by organic molecule 9,10 Phenanthrenequinone (PQ), have been evaluated via analysis of hole gas transferred in the SiGe quantum well at low temperature. The enhancement in the density of two dimensional hole gas (2DHG) formed in the SiGe quantum well in the structure covered by PQ thin film is attributed to electrical passivation of Si surface states. Finally, the density of Si surface states (state/eV cm2), and surface Fermi level position, have been evaluated via Modified Mid-gap Pinning Model (MMPM) applied to experimental results. •Si surface covered by organic 9,10 Phenanthrenequinone (PQ) film has been characterized.•Hole gas formed in p-Si/SiGe/Si structure used for electrical characterization of Si surface.•Experiments have been simulated by a modified mid-gap pinning model.•Surface density of states, and Fermi level of bare and PQ deposited structures were evaluated.•Surface Fermi level position of PQ deposited structure is closer to mid gap than bare case.