Characterization of Local Electronic Transport through Ultrathin Au/Highly-Dense Si Nanocolumnar Structures by Conducting-Probe Atomic Force Microscopy
We have fabricated highly-dense Si nano-columnar structures accompanied with Si nanocrystals on W-coated quartz, and characterized their local electrical transport in the thickness direction using atomic force microscopy (AFM) with a conductive cantilever. By applying DC negative bias to the bottomW...
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Veröffentlicht in: | IEICE Transactions on Electronics 2013/05/01, Vol.E96.C(5), pp.718-721 |
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Hauptverfasser: | , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | We have fabricated highly-dense Si nano-columnar structures accompanied with Si nanocrystals on W-coated quartz, and characterized their local electrical transport in the thickness direction using atomic force microscopy (AFM) with a conductive cantilever. By applying DC negative bias to the bottomW electrode with respect to a grounded top electrode made of ∼10-nm-thick Au on the sample surface, current images reflecting highly-localized conduction were obtained in both contact and non-contact modes. This result is attributable to electron emission due to quasi-ballistic transport through Si nanocrystals via nanocolumnar structure. |
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ISSN: | 0916-8524 1745-1353 |
DOI: | 10.1587/transele.E96.C.718 |