Characterization of Local Electronic Transport through Ultrathin Au/Highly-Dense Si Nanocolumnar Structures by Conducting-Probe Atomic Force Microscopy

We have fabricated highly-dense Si nano-columnar structures accompanied with Si nanocrystals on W-coated quartz, and characterized their local electrical transport in the thickness direction using atomic force microscopy (AFM) with a conductive cantilever. By applying DC negative bias to the bottomW...

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Veröffentlicht in:IEICE Transactions on Electronics 2013/05/01, Vol.E96.C(5), pp.718-721
Hauptverfasser: TAKEUCHI, Daichi, MAKIHARA, Katsunori, IKEDA, Mitsuhisa, MIYAZAKI, Seiichi, KAKI, Hirokazu, HAYASHI, Tsukasa
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Sprache:eng
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Zusammenfassung:We have fabricated highly-dense Si nano-columnar structures accompanied with Si nanocrystals on W-coated quartz, and characterized their local electrical transport in the thickness direction using atomic force microscopy (AFM) with a conductive cantilever. By applying DC negative bias to the bottomW electrode with respect to a grounded top electrode made of ∼10-nm-thick Au on the sample surface, current images reflecting highly-localized conduction were obtained in both contact and non-contact modes. This result is attributable to electron emission due to quasi-ballistic transport through Si nanocrystals via nanocolumnar structure.
ISSN:0916-8524
1745-1353
DOI:10.1587/transele.E96.C.718