Highly conductive GaN anti-reflection layer at transparent conducting oxide/Si interface for silicon thin film solar cells

Highly conductive GaN film was prepared by magnetron sputtering and this was applied as an anti-reflection layer (ARL) between a transparent conducting oxide and microcrystalline silicon (μc-Si:H) in order to decrease optical reflection. The efficiency (8.81%) of μc-Si:H single junction thin film so...

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Veröffentlicht in:	Solar energy materials and solar cells 2012-10, Vol.105, p.317-321
Hauptverfasser:	Kang, Dong-Won, Kwon, Jang-Yeon, Shim, Jenny, Lee, Heon-Min, Han, Min-Koo
Format:	Artikel
Sprache:	eng
Schlagworte:	Anti-reflection layer Applied sciences Conduction Direct energy conversion and energy accumulation Electrical engineering. Electrical power engineering Electrical power engineering Energy Exact sciences and technology Gallium nitrides GaN Microcrystalline silicon Natural energy Oxides Photoelectric conversion Photovoltaic cells Photovoltaic conversion Solar cells Solar cells. Photoelectrochemical cells Solar energy Thin film solar cells Thin films TiO2/ZnO Titanium dioxide Zinc oxide
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