Highly conductive GaN anti-reflection layer at transparent conducting oxide/Si interface for silicon thin film solar cells
Highly conductive GaN film was prepared by magnetron sputtering and this was applied as an anti-reflection layer (ARL) between a transparent conducting oxide and microcrystalline silicon (μc-Si:H) in order to decrease optical reflection. The efficiency (8.81%) of μc-Si:H single junction thin film so...
Gespeichert in:
| Veröffentlicht in: | Solar energy materials and solar cells 2012-10, Vol.105, p.317-321 |
|---|---|
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 321 |
|---|---|
| container_issue | |
| container_start_page | 317 |
| container_title | Solar energy materials and solar cells |
| container_volume | 105 |
| creator | Kang, Dong-Won Kwon, Jang-Yeon Shim, Jenny Lee, Heon-Min Han, Min-Koo |
| description | Highly conductive GaN film was prepared by magnetron sputtering and this was applied as an anti-reflection layer (ARL) between a transparent conducting oxide and microcrystalline silicon (μc-Si:H) in order to decrease optical reflection. The efficiency (8.81%) of μc-Si:H single junction thin film solar cell with the proposed GaN ARL exceeded that of the cell (8.36%) with the widely used TiO2/ZnO bilayer ARL. Moreover, the proposed GaN ARL requires no protection layer against hydrogen plasma such as ZnO overcoating (∼10nm) in case of the TiO2/ZnO bilayer. GaN ARL can replace the TiO2/ZnO bilayer ARL in terms of high performance and simple fabrication process. |
| doi_str_mv | 10.1016/j.solmat.2012.06.041 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1671575717</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0927024812003443</els_id><sourcerecordid>1082214230</sourcerecordid><originalsourceid>FETCH-LOGICAL-c468t-13186a6403a8e99964188c372bc550816335024a9c4edccee701619aef83588b3</originalsourceid><addsrcrecordid>eNqFkc1qHDEQhEVIIBsnb5CDLoFcZqy_0WgugWASO2Dsg-2zaGt6bC1aaSNpTTZPHy1rfIxPDc1X6lIVIZ856znj-nTdlxQ2UHvBuOiZ7pnib8iKm3HqpJzMW7Jikxg7JpR5Tz6UsmaMCS3Vivy98A-PYU9divPOVf-E9ByuKMTqu4xLwLZLkQbYY6ZQac0QyxYyxvqiiQ80_fEznt546mPFvIBDuqRMiw--UbQ--kgXHza0GYVMHYZQPpJ3C4SCn57nCbn7-eP27KK7vD7_dfb9snNKm9pxyY0GrZgEg9M0acWNcXIU924YmOFayqF9DCancHYOcWyR8AlwMXIw5l6ekK_Hd7c5_d5hqXbjy8EBREy7Yrke-TAOIx9fR5kRgishWUPVEXU5ldKistvsN5D3DbKHVuzaHluxh1Ys07a10mRfni9AcRCWFqfz5UUrtDBMiYOTb0cOWzJPHrMtzmN0OPvcOrFz8v8_9A952qUr</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1082214230</pqid></control><display><type>article</type><title>Highly conductive GaN anti-reflection layer at transparent conducting oxide/Si interface for silicon thin film solar cells</title><source>Elsevier ScienceDirect Journals</source><creator>Kang, Dong-Won ; Kwon, Jang-Yeon ; Shim, Jenny ; Lee, Heon-Min ; Han, Min-Koo</creator><creatorcontrib>Kang, Dong-Won ; Kwon, Jang-Yeon ; Shim, Jenny ; Lee, Heon-Min ; Han, Min-Koo</creatorcontrib><description>Highly conductive GaN film was prepared by magnetron sputtering and this was applied as an anti-reflection layer (ARL) between a transparent conducting oxide and microcrystalline silicon (μc-Si:H) in order to decrease optical reflection. The efficiency (8.81%) of μc-Si:H single junction thin film solar cell with the proposed GaN ARL exceeded that of the cell (8.36%) with the widely used TiO2/ZnO bilayer ARL. Moreover, the proposed GaN ARL requires no protection layer against hydrogen plasma such as ZnO overcoating (∼10nm) in case of the TiO2/ZnO bilayer. GaN ARL can replace the TiO2/ZnO bilayer ARL in terms of high performance and simple fabrication process.</description><identifier>ISSN: 0927-0248</identifier><identifier>EISSN: 1879-3398</identifier><identifier>DOI: 10.1016/j.solmat.2012.06.041</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Anti-reflection layer ; Applied sciences ; Conduction ; Direct energy conversion and energy accumulation ; Electrical engineering. Electrical power engineering ; Electrical power engineering ; Energy ; Exact sciences and technology ; Gallium nitrides ; GaN ; Microcrystalline silicon ; Natural energy ; Oxides ; Photoelectric conversion ; Photovoltaic cells ; Photovoltaic conversion ; Solar cells ; Solar cells. Photoelectrochemical cells ; Solar energy ; Thin film solar cells ; Thin films ; TiO2/ZnO ; Titanium dioxide ; Zinc oxide</subject><ispartof>Solar energy materials and solar cells, 2012-10, Vol.105, p.317-321</ispartof><rights>2012 Elsevier B.V.</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c468t-13186a6403a8e99964188c372bc550816335024a9c4edccee701619aef83588b3</citedby><cites>FETCH-LOGICAL-c468t-13186a6403a8e99964188c372bc550816335024a9c4edccee701619aef83588b3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.solmat.2012.06.041$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,776,780,3536,27903,27904,45974</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=26280427$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Kang, Dong-Won</creatorcontrib><creatorcontrib>Kwon, Jang-Yeon</creatorcontrib><creatorcontrib>Shim, Jenny</creatorcontrib><creatorcontrib>Lee, Heon-Min</creatorcontrib><creatorcontrib>Han, Min-Koo</creatorcontrib><title>Highly conductive GaN anti-reflection layer at transparent conducting oxide/Si interface for silicon thin film solar cells</title><title>Solar energy materials and solar cells</title><description>Highly conductive GaN film was prepared by magnetron sputtering and this was applied as an anti-reflection layer (ARL) between a transparent conducting oxide and microcrystalline silicon (μc-Si:H) in order to decrease optical reflection. The efficiency (8.81%) of μc-Si:H single junction thin film solar cell with the proposed GaN ARL exceeded that of the cell (8.36%) with the widely used TiO2/ZnO bilayer ARL. Moreover, the proposed GaN ARL requires no protection layer against hydrogen plasma such as ZnO overcoating (∼10nm) in case of the TiO2/ZnO bilayer. GaN ARL can replace the TiO2/ZnO bilayer ARL in terms of high performance and simple fabrication process.</description><subject>Anti-reflection layer</subject><subject>Applied sciences</subject><subject>Conduction</subject><subject>Direct energy conversion and energy accumulation</subject><subject>Electrical engineering. Electrical power engineering</subject><subject>Electrical power engineering</subject><subject>Energy</subject><subject>Exact sciences and technology</subject><subject>Gallium nitrides</subject><subject>GaN</subject><subject>Microcrystalline silicon</subject><subject>Natural energy</subject><subject>Oxides</subject><subject>Photoelectric conversion</subject><subject>Photovoltaic cells</subject><subject>Photovoltaic conversion</subject><subject>Solar cells</subject><subject>Solar cells. Photoelectrochemical cells</subject><subject>Solar energy</subject><subject>Thin film solar cells</subject><subject>Thin films</subject><subject>TiO2/ZnO</subject><subject>Titanium dioxide</subject><subject>Zinc oxide</subject><issn>0927-0248</issn><issn>1879-3398</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNqFkc1qHDEQhEVIIBsnb5CDLoFcZqy_0WgugWASO2Dsg-2zaGt6bC1aaSNpTTZPHy1rfIxPDc1X6lIVIZ856znj-nTdlxQ2UHvBuOiZ7pnib8iKm3HqpJzMW7Jikxg7JpR5Tz6UsmaMCS3Vivy98A-PYU9divPOVf-E9ByuKMTqu4xLwLZLkQbYY6ZQac0QyxYyxvqiiQ80_fEznt546mPFvIBDuqRMiw--UbQ--kgXHza0GYVMHYZQPpJ3C4SCn57nCbn7-eP27KK7vD7_dfb9snNKm9pxyY0GrZgEg9M0acWNcXIU924YmOFayqF9DCancHYOcWyR8AlwMXIw5l6ekK_Hd7c5_d5hqXbjy8EBREy7Yrke-TAOIx9fR5kRgishWUPVEXU5ldKistvsN5D3DbKHVuzaHluxh1Ys07a10mRfni9AcRCWFqfz5UUrtDBMiYOTb0cOWzJPHrMtzmN0OPvcOrFz8v8_9A952qUr</recordid><startdate>20121001</startdate><enddate>20121001</enddate><creator>Kang, Dong-Won</creator><creator>Kwon, Jang-Yeon</creator><creator>Shim, Jenny</creator><creator>Lee, Heon-Min</creator><creator>Han, Min-Koo</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>7SP</scope><scope>7SU</scope><scope>7TB</scope><scope>7U5</scope><scope>8FD</scope><scope>C1K</scope><scope>FR3</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20121001</creationdate><title>Highly conductive GaN anti-reflection layer at transparent conducting oxide/Si interface for silicon thin film solar cells</title><author>Kang, Dong-Won ; Kwon, Jang-Yeon ; Shim, Jenny ; Lee, Heon-Min ; Han, Min-Koo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c468t-13186a6403a8e99964188c372bc550816335024a9c4edccee701619aef83588b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Anti-reflection layer</topic><topic>Applied sciences</topic><topic>Conduction</topic><topic>Direct energy conversion and energy accumulation</topic><topic>Electrical engineering. Electrical power engineering</topic><topic>Electrical power engineering</topic><topic>Energy</topic><topic>Exact sciences and technology</topic><topic>Gallium nitrides</topic><topic>GaN</topic><topic>Microcrystalline silicon</topic><topic>Natural energy</topic><topic>Oxides</topic><topic>Photoelectric conversion</topic><topic>Photovoltaic cells</topic><topic>Photovoltaic conversion</topic><topic>Solar cells</topic><topic>Solar cells. Photoelectrochemical cells</topic><topic>Solar energy</topic><topic>Thin film solar cells</topic><topic>Thin films</topic><topic>TiO2/ZnO</topic><topic>Titanium dioxide</topic><topic>Zinc oxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kang, Dong-Won</creatorcontrib><creatorcontrib>Kwon, Jang-Yeon</creatorcontrib><creatorcontrib>Shim, Jenny</creatorcontrib><creatorcontrib>Lee, Heon-Min</creatorcontrib><creatorcontrib>Han, Min-Koo</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Electronics & Communications Abstracts</collection><collection>Environmental Engineering Abstracts</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Environmental Sciences and Pollution Management</collection><collection>Engineering Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Solar energy materials and solar cells</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kang, Dong-Won</au><au>Kwon, Jang-Yeon</au><au>Shim, Jenny</au><au>Lee, Heon-Min</au><au>Han, Min-Koo</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Highly conductive GaN anti-reflection layer at transparent conducting oxide/Si interface for silicon thin film solar cells</atitle><jtitle>Solar energy materials and solar cells</jtitle><date>2012-10-01</date><risdate>2012</risdate><volume>105</volume><spage>317</spage><epage>321</epage><pages>317-321</pages><issn>0927-0248</issn><eissn>1879-3398</eissn><abstract>Highly conductive GaN film was prepared by magnetron sputtering and this was applied as an anti-reflection layer (ARL) between a transparent conducting oxide and microcrystalline silicon (μc-Si:H) in order to decrease optical reflection. The efficiency (8.81%) of μc-Si:H single junction thin film solar cell with the proposed GaN ARL exceeded that of the cell (8.36%) with the widely used TiO2/ZnO bilayer ARL. Moreover, the proposed GaN ARL requires no protection layer against hydrogen plasma such as ZnO overcoating (∼10nm) in case of the TiO2/ZnO bilayer. GaN ARL can replace the TiO2/ZnO bilayer ARL in terms of high performance and simple fabrication process.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.solmat.2012.06.041</doi><tpages>5</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0927-0248 |
| ispartof | Solar energy materials and solar cells, 2012-10, Vol.105, p.317-321 |
| issn | 0927-0248 1879-3398 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_1671575717 |
| source | Elsevier ScienceDirect Journals |
| subjects | Anti-reflection layer Applied sciences Conduction Direct energy conversion and energy accumulation Electrical engineering. Electrical power engineering Electrical power engineering Energy Exact sciences and technology Gallium nitrides GaN Microcrystalline silicon Natural energy Oxides Photoelectric conversion Photovoltaic cells Photovoltaic conversion Solar cells Solar cells. Photoelectrochemical cells Solar energy Thin film solar cells Thin films TiO2/ZnO Titanium dioxide Zinc oxide |
| title | Highly conductive GaN anti-reflection layer at transparent conducting oxide/Si interface for silicon thin film solar cells |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-22T14%3A59%3A10IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Highly%20conductive%20GaN%20anti-reflection%20layer%20at%20transparent%20conducting%20oxide/Si%20interface%20for%20silicon%20thin%20film%20solar%20cells&rft.jtitle=Solar%20energy%20materials%20and%20solar%20cells&rft.au=Kang,%20Dong-Won&rft.date=2012-10-01&rft.volume=105&rft.spage=317&rft.epage=321&rft.pages=317-321&rft.issn=0927-0248&rft.eissn=1879-3398&rft_id=info:doi/10.1016/j.solmat.2012.06.041&rft_dat=%3Cproquest_cross%3E1082214230%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1082214230&rft_id=info:pmid/&rft_els_id=S0927024812003443&rfr_iscdi=true |