Synthesis of zirconium silicide in Zr thin film on Si and study of its surface morphology

Zirconium silicide was synthesized on Si (100)/zirconium interface by means of swiftly moving 150 MeV Au ion beam. Thin films of zirconium (~60 nm) were deposited on Si (100) substrates in ultra high vacuum conditions using the electron-beam evaporation technique. The system was exposed to different...

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Veröffentlicht in:	Journal of materials science. Materials in electronics 2013-10, Vol.24 (10), p.3634-3639
Hauptverfasser:	Sisodia, Veenu, Dhole, S. D.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Atomic force microscopy Characterization and Evaluation of Materials Chemistry and Materials Science Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Electrical resistivity Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronics Exact sciences and technology Intermetallics Materials Materials Science Methods of deposition of films and coatings film growth and epitaxy Molecular, atomic, ion, and chemical beam epitaxy Morphology Optical and Electronic Materials Physics Silicides Silicon substrates Solid surfaces and solid-solid interfaces Surface double layers, schottky barriers, and work functions Surface structure and topography Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin films Zirconium
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