Thermal decomposition of tetrabromosilane and deposition of crystalline silicon

Pyrolysis of tetrabromosilane (SiBr4) was carried out by passing vaporized SiBr4 with hydrogen over a substrate heated to less than 1000°C. The substrate was then placed in a reaction furnace equipped with a flow system and the exhaust gas containing the reactants and products was analyzed versus te...

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Veröffentlicht in:	Materials science in semiconductor processing 2014-07, Vol.23, p.93-97
Hauptverfasser:	Nakayama, Masaharu, Miyamoto, Seiji, Ogawa, Takuro, Osae, Shogo, Tomono, Kazuaki, Sumimoto, Michinori, Sakata, Yoshihisa, Komatsu, Ryuichi
Format:	Artikel
Sprache:	eng
Schlagworte:	Conversion Crystal structure Deposition Evolution Flow reactor Furnaces Pyrolysis Semiconductors Si deposition SiBr4 Silicon Thermochemical decomposition
Online-Zugang:	Volltext
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